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期刊论文
On-State Breakdown Model for High Voltage RESURF LDMOS
半导体学报第26卷第3期2005年3月/CHINESE JOURNAL OF SEM ICONDUCTORS Vol. 26, No. 3, Mar. , 2005,-0001,():
An analytical breakdown model under on-state condition for high voltage RESURF LDMOS is proposed. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result, electric field profile of n-drift in LDMOS at on-state is obtained. Based on this model, the electric SOA of LDMOS can be determined. The analytical result s partially fit to our numerical ( by MEDICI) and experiment result s. This model is an aid to understand the device physics during on-state accurately and it also directs high voltage LDMOS design.
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