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期刊论文
Intergrain magnetoresistance via spin-polarized tunneling in polycrystalline ferromagnetic semiconductors
Journal of Magnetism and Magnetic Materials 268(2004)251-256,-0001,():
The intergrain magnetoresistance (IMR) was observed in a number of different polycrystalline half-metallic ferromagnets at temperatures below the Curie temperarure. By taking into account the basic physics of ferromagnetic semiconductors, we generalize the spin-polarized intergrain tunneling model to theoretically study the IMR effect in the polycrystalline ferromagnetic semiconductors. It was shown that the IMR ratio is strongly dependent on both the itinerant-carrier density and the magnetic-ion density in the ferromagnetic semiconductor grains. The larger IMR may be achieved by optimally adjusting the material parameters.
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