提示
毛秉伟
-
34浏览
-
0点赞
-
0收藏
-
0分享
-
118下载
-
0评论
-
引用
期刊论文
Formation and STM tip-induced reduction of ultra thin SnO film on Au (111)
Chemical Physics Letters 373(2003)575-579，-0001，（）：
This Letter presents a study on the oxidation of electrochemically deposited Sn monolayer on Au(1 1 1) surface and STM tip-induced reduction of as-prepared ultra thin SnO film. A threshold bias of 0.6 V (tip negative) at a low tunneling current of ～50 pA is required to image the as-formed SnO thin film by STM, typical of a semiconductor characteristic. Increasing the tunneling current to ～2 nA leads to the reduction of the SnO back to Sn. Based on the energy level calculation for the SnO, a mechanism involving direct electron tunneling is proposed to account for the tipinduced reduction.
【免责声明】以下全部内容由[毛秉伟]上传于[2009年02月12日 14时03分24秒]，版权归原创者所有。本文仅代表作者本人观点，与本网站无关。本网站对文中陈述、观点判断保持中立，不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考，并请自行承担全部责任。
本学者其他成果
同领域成果
