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Molecular beam epitaxy growth and photoluminescence study of room temperature 1.31 mm (InyGa1-yAs/GaAs1-x Sbx)/GaAs bilayer quantum wells

牛智川Z.C. Niu X.H. Xu H.Q. Ni Y.Q. Xu Z.H. He Q. Han R.H. Wu

Journal of Crystal Growth 278(2005)558-563,-0001,():

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摘要/描述

Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photoluminescence (PL) that a strong blue shift of the PL peak energy of 47meV with increasing PL excitation power from 0.63 to 20mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μm) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μm range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μm wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices.

版权说明:以下全部内容由牛智川上传于   2007年09月29日 09时27分13秒,版权归本人所有。

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