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Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure

牛智川B. S. Ma X. D. Wang F. H. Su Z. L. Fang K. Ding Z. C. Niu and G. H. Li

J. Appl. Phys. , Vol. 95, No. 3, 1 February 2004,-0001,():

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摘要/描述

The photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots was investigated at 15 K under hydrostatic pressure up to 9 GPa. Photoemission from both the ground and the first excited states in large InAs dots was observed. The pressure coefficients of the two emissions were 69 and 72 meV/GPa, respectively. A nonlinear elasticity theory was used to interpret the significantly small pressure coefficients of the large dots. The sequential quenching of the ground and the excited state emissions with increasing pressure suggests that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states.

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