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High-performance 1.55 μm low-temperature-grown GaAs resonant-cavity-enhanced photodetector
APPLIED PHYSICS LETTERS 89, 131104(2006)，-0001，（）：
A 1.55μm low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 °C was used as the absorption layer. Twenty- and fifteen-pair GaAs/ AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 μm. The dark current densities are 1.28×10−7 A/cm2 at the bias of 0 V and 3.5×10−5 A/cm2 at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs.
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