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High-performance 1.55 μm low-temperature-grown GaAs resonant-cavity-enhanced photodetector

牛智川Q. Han Z. C. Niu L. H. Peng H. Q. Ni X. H. Yang Y. Du H. Zhao R. H. Wu Q. M. Wang

APPLIED PHYSICS LETTERS 89, 131104(2006),-0001,():

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摘要/描述

A 1.55μm low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 °C was used as the absorption layer. Twenty- and fifteen-pair GaAs/ AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 μm. The dark current densities are 1.28×10−7 A/cm2 at the bias of 0 V and 3.5×10−5 A/cm2 at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs.

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