The role of Sb in the molecular beam epitaxy growth of 1.30–1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content
Journal of Crystal Growth 290(2006)494-497，-0001，（）：
Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 mm range is much more apparent than that in the 1.3μm range, which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 mm single-QW were comparable with that of the 1.3 mm QWs.
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