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The role of Sb in the molecular beam epitaxy growth of 1.30–1.55 μm wavelength GaInNAs/GaAs quantum well with high indium content

牛智川Donghai Wu Zhichuan Niu Shiyong Zhang Haiqiao Ni Zhenhong He Zheng Sun Qin Han Ronghan Wu

Journal of Crystal Growth 290(2006)494-497,-0001,():

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摘要/描述

Sb-assisted GaInNAs/GaAs quantum wells (QWs) with high (42.5%) indium content were investigated systematically. Transmission electron microscopy, reflection high-energy electron diffraction and photoluminescence (PL) measurements reveal that Sb acts as a surfactant to suppress three-dimensional growth. The improvement in the 1.55 mm range is much more apparent than that in the 1.3μm range, which can be attributed to the difference in N composition. The PL intensity and the full-width at half maximum of the 1.55 mm single-QW were comparable with that of the 1.3 mm QWs.

版权说明:以下全部内容由牛智川上传于   2007年09月29日 09时25分11秒,版权归本人所有。

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