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Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy

牛智川Z. Gong Z. C. Niu S. S. Huang Z. D. Fang B. Q. Sun and J. B. Xia

APPLIED PHYSICS LETTERS 87, 093116(2005),-0001,():

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摘要/描述

GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings.

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版权说明:以下全部内容由牛智川上传于   2007年09月29日 09时26分03秒,版权归本人所有。

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