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期刊论文
GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
APPLIED PHYSICS LETTERS 87, 231121(2005)，-0001，（）：
Starting from the growth of high-quality 1.3 μm GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm2 with as-cleaved facet mirrors.
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