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GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

牛智川Z. C. Niu S. Y. Zhang H. Q. Ni D. H. Wu H. Zhao H. L. Peng Y. Q. Xu S. Y. Li Z. H. He Z. W. Ren Q. Han X. H. Yang Y. Du R. H. Wu

APPLIED PHYSICS LETTERS 87, 231121(2005),-0001,():

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摘要/描述

Starting from the growth of high-quality 1.3 μm GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm2 with as-cleaved facet mirrors.

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【免责声明】以下全部内容由[牛智川]上传于[2007年09月29日 09时26分53秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

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