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GaAs-based room-temperature continuous-wave 1.59 μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

牛智川Z. C. Niu S. Y. Zhang H. Q. Ni D. H. Wu H. Zhao H. L. Peng Y. Q. Xu S. Y. Li Z. H. He Z. W. Ren Q. Han X. H. Yang Y. Du R. H. Wu

APPLIED PHYSICS LETTERS 87, 231121(2005),-0001,():

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摘要/描述

Starting from the growth of high-quality 1.3 μm GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm2 with as-cleaved facet mirrors.

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版权说明:以下全部内容由牛智川上传于   2007年09月29日 09时26分53秒,版权归本人所有。

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