提示
蒲以康
-
53浏览
-
0点赞
-
0收藏
-
0分享
-
250下载
-
0评论
-
引用
期刊论文
The dependence of GaN growth rate on electron temperature in an ECR plasma
Surface and Coatings Technology 131(2000)470-473，-0001，（）：
Experiments on the deposition of GaN thin films were carried out in an ECR plasma reactor using nitrogen gas and Trimethylgallium MG.as precursors. Electron temperature and nitrogen species adjacent to the substrate surface during deposition were measured by a CCD spectrometer. We observed an optimum electron temperature for the growth rate. The result suggests that tuning of electron energyor temperature. can be used to optimize the deposition and electron temperature near the substrate surface may be a candidate for one of the control parameters in plasma-assisted CVD.
【免责声明】以下全部内容由[蒲以康]上传于[2005年02月23日 22时11分02秒]，版权归原创者所有。本文仅代表作者本人观点，与本网站无关。本网站对文中陈述、观点判断保持中立，不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考，并请自行承担全部责任。
本学者其他成果
同领域成果
