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期刊论文

Characteristics of NixFe100-x films deposited on SiO2/Si (100) by DC magnetron co-sputtering

邱宏Xiaobai Chen ab Hong Qiu ac* Hao Qian a Ping Wu a Fengping Wang a Liqing Pan a Yue Tian a

Vacuum 75(2004)217-223,-0001,():

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摘要/描述

NixFe100-x films with a thickness of about 200nm were deposited on SiO2/Si (100) substrates at room temperature by DC magnetron co-sputtering using both Fe and Ni80Fe20 targets. Compositional, structural, electrical and magnetic properties of the films were investigated. Ni76Fe24, Ni65Fe35, Ni60Fe40, Ni55Fe45, Ni49Fe51 films are obtained by increasing the sputtering power of the Fe target. All the films have a fcc structure. Ni76Fe24, Ni65Fe35, Ni60Fe40 and Ni55Fe45 films grow with crystalline orientations of [111] and [220] in the direction of the film growth while the Ni49Fe51 film has the [111] texture structure in the direction of the film growth. The lattice constant of the film increases linearly with increasing Fe content. All of the films grow with thin columnar grains and have void networks in the grain boundaries. The grain size does not change markedly with the composition of the film. The resistivity of the film increases with increasing Fe content and is one order of magnitude larger than that of the bulk. For all the films the magnetic hysteresis loop shows a hard magnetization. The Ni76Fe24 film has the lowest saturation magnetization of 6.75

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