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期刊论文
Nickel silicidation on n and p-type junctions at 300℃
Appl. Phys. Lett, Vol. 85, No.3, 19 July 2004，-0001，（）：
The electrical and materials properties of～20nm nickel silicide films, formed at 300℃, on n+/p and p+/n junctions are investigated. The sheet resistance of the silicide on p+/n junctions is found to be more than twice as high as that of the silicide on n+/p junctions. Cross section transmission electron microscopy, Rutherford backscattering spectroscopy, and x-ray photoelectron energy spectroscopy reveal that a pure Ni2Si layer forms on n+/p junctions while a thicker Ni2Si/NiSi double layer (～60% Ni2Si) forms on p+/n junctions. But the electrical differences are found to correlate only with differences in grain size and dopant concentration in the silicide.
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