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期刊论文
Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature
Japanese Journal of Applied Physics Vol. 43, No.7A, 2004, pp. 4460-4461，-0001，（）：
Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs with nearly amorphous structure were fabricated at 500℃; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800℃. The average diameter and length of the SiNWs are 40-70nm and 10mm, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.
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