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期刊论文

Optical characterization of structure for semiconductor quantum dots

盛卫东Weidong Sheng

PHYSICAL REVIEW B 77, 113305 2008 ,-0001,():

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摘要/描述

Linear polarization of the multiexciton emission from self-assembled quantum dots is investigated by using an empirical tight-binding method. The polarization of the primary interband transition is shown to have a quadratic dependence on the lateral aspect ratio of the structures and is insensitive to both the excitonic and random intermixing effects, which make it an appropriate tool for structure characterization. The ground-state transitions in the emission spectra of multiexciton complexes are found to exhibit very different polarization from the primary interband transition, which we attribute to different component profiles in the excited valence-band states.

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版权说明:以下全部内容由盛卫东上传于   2010年01月30日 18时15分04秒,版权归本人所有。

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