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引用
期刊论文
碳纳米管/硅纳米线阵列异质结构的制备及其光电响应与硅纳米线长度的依赖关系
Chemical Physics Letters 501 (2011) 461–465,-0001,():
Heterojunction structures were fabricated, which consisted of a double-walled carbon nanotube (DWCNT) thin film coated either on an n-type silicon wafer or an n-type silicon nanowires (SiNW) array with varied lengths. Current–voltage characteristics measured under laser (532 nm) irradiation showed that the photoresponse [(light current dark current)/dark current] of the heterojunctions dramatically depends on the length of SiNWs. Increase in the length of SiNWs led first to increase and then to decrease in the photoresponse of DWCNT/SiNW heterojunction. The heterojunction with a SiNW length of ca. 600 nm has the highest the photoresponse value of 10.72.
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