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期刊论文
Novel Single- and Double-Gate Race-Track-Shaped Field Emitter Structures
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In this paper, new single- and double-gate race-track-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100V, and the field emission current density is approximately 2.4A/cmz which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% compared to the single-gate structure.
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