A method of electroless silver deposition on silver activated p-type silicon (111) wafer was proposed. The silver seed layer was deposited firstly on the wafer in the solution of 0.005mol/L AgNO3+0.06mol/L HF. Then the silver film was electrolessly deposited on the seed layer in the electroless bath of AgNO3+NH3+acetic acid+NH2NH2 (pH 10.2). The morphology ofthe seed layer and the silver films prepared under the condition ofthe different bath compOSition was compared by atomic force microscopy. The reflectance of the silver films with different thickness was characterized by Fourier transform infrared spectrometry. The experimental results indicate that the seed layer Dossesses excellent catalytic activity toward electroless silver deposition and rotating of the silicon wafer during the electroless silver deposition could lead to formation of the smoother silver film.