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期刊论文

Analysis of a diode-pumped Nd:YVO4 laser passively Q switched with GaAs

王青圃Ping Li a* Qingpu Wang a Xingyu Zhang a Yurong Wang a Shichen Li b He Jingliang c Lu Xingqiang c

Optics & Laser Technology 33(2001)383-387,-0001,():

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摘要/描述

A diode-pumped Nd:YVO4 laser passively Q switched with GaAs is studied theoretically and experimentally. We have demonstrated the influence of single-photon absorption, two-photon absorption and free-carrier absorption in GaAs on the Q-switched pulse characteristics. The pulse profile, pulse energy and pulse width of the Q switching with GaAs are simulated by using the conventional rate equations of the four-level laser system. The experimental results show reasonable agreement with the theoretical results on the whole.

【免责声明】以下全部内容由[王青圃]上传于[2004年12月28日 18时40分05秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

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