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期刊论文
Formation and characterization of Si5C3 type silicon carbide by carbon ion implantation with a MEVVA ion source
Materials Letters 61 (2007) 4083-4085，-0001，（）：
A Si5C3 type silicon carbon has been prepared via carbon ion implantation into silicon substrate using a MEVVA ion source. Carbon ions were implanted into silicon substrate at a fluence of 5×1017 ions/cm2 and then the as-implanted samples were annealed at 1250℃ for 2h. The thermal annealing produced a silicon carbide layer on the surface of silicon substrate. The results of X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) confirm the existence of Si5C3, rather than SiC. The results of Fourier transform infrared reflection (FTIR) and Raman spectroscopy analyses show that the Si–C vibration frequency in crystalline Si5C3 is slightly less than that in crystalline β-SiC.
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