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期刊论文
Electrical properties of different NO-annealed oxynitrides
Journal of Non-Crystalline Solids 254(1999)94-98,-0001,():
Performances of gate dielectrics prepared by double-nitridation in NO and N2O are investigated. Stronger oxide/Si interface bonding, less charge trapping and larger charge-to-breakdown are observed for such gate dielectrics than singly NO-nitrided gate dielectric. The physical mechanisms behind the findings are attributed to larger nitrogen peak concentration located almost at the oxide/Si interface and total nitrogen content near the oxide/Si interface of these gate dielectrics.
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