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期刊论文
Elects of the surface treatment of silicon substrate on the "eld emission characteristic of a silicon and amorphous diamond cold cathode emitter
Ultramicroscopy 79(1999)89-93,-0001,():
Details are given of an experimental study of the e!ects of surface treatment of silicon substrate on the "eld emission process of #at amorphous diamond (a-D) "lm "eld emitters. Using a "ltered cathodic vacuum arc plasma deposition system (FCVAPD), the amorphous diamond (a-D) "lm was deposited on both non-treated and etched silicon wafers (n-type and p-type). The "eld electron emission characteristic was measured before and after depositing a-D "lm. The a-D "lm on etched silicon wafer shows distinct increase in emission current compared with that on no n-treated silicon wafer. The phenomenon is attributed to two important reasons: the low or even negative surface electron a$nity of a-D "lm and the local "eld enhancement at the Si-diamond interface.
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