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曾海波

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期刊论文

50‐Fold EQE Improvement up to 6.27% of Solution‐Processed All‐Inorganic Perovskite CsPbBr3 QLEDs via Surface Ligand Density Control

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Advanced Materials,2016,29(5):1603885 | 2016年11月24日 | https://doi.org/10.1002/adma.201603885

URL:https://onlinelibrary.wiley.com/doi/10.1002/adma.201603885

摘要/描述

Solution‐processed CsPbBr3 quantum‐dot light‐emitting diodes with a 50‐fold external quantum efficiency improvement (up to 6.27%) are achieved through balancing surface passivation and carrier injection via ligand density control (treating with hexane/ethyl acetate mixed solvent), which induces the coexistence of high levels of ink stability, photoluminescence quantum yields, thin‐film uniformity, and carrier‐injection efficiency.

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