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A new partial SOI power device structure with P-type buried layer
Solid-State Electronics 49(2005)1965-1968,-0001,():
A new BPSOI (buried layer partial SOI) structure is developed, in which the P-type buried layer is implanted into the P substrate by silicon window underneath the source of the conventional PSOI. The mechanism of breakdown is that the additional electric field produced by P-type buried layer charges modulates surface electric field, which decreases drastically the electric field peaks near the drain and source junctions. Moreover, the on-resistance of BPSOI is decreased as a result of increasing drift region doping due to neutralism of P-type buried layer. The results indicate that the breakdown voltage of BPSOI is increased by 52-58% and the on-resistance is decreased by 45-48% in comparison to conventional PSOI in virtue of 2-D numerical simulations using MEDICI.
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