Strain-energy-driven abnormal grain growth in copper films on silicon substrates，成果详细信息-中国科技论文在线

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Strain-energy-driven abnormal grain growth in copper films on silicon substrates

张建民， Jian-min Zhang a ， b ， * ， Ke-wei Xu b ， Vincent Ji c

Journal of Crystal Growth 226(2001)168-174，-0001，（）：

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摘要/描述

Abnormal grain growth in thin Cu films on Si substrates has been investigated as a function of annealing time. Abnormal grains with (110) orientation were observed by transmission electron microscopy. X-ray diffraction patterns showed that the films which underwent extensive abnormal grain growth also underwent a change in texture from (111) to (100), (110) and (311). A simple theoretical analysis showed that these were the results of a strain-energy-driven abnormal grain growth process.

关键词: A1 ， Recrystallization; A1 ， X-ray diffraction; A3 ， Physical vapor deposition processes; B1 ， Metals

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