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期刊论文
Chemical bonding of magnetron-sputtered copper on PECVD amorphous SiCOF film
Applied Surface Science 206(2003)321-330，-0001，（）：
pper atoms or clusters penetrating in to the SiCOF film and cleaving Si-O bonds. Additionally, the anncaling at 400℃ in high pure N2 leads to the formation of Cu2O phase at the full expense of Cu phase, subsequently, CuO phase comes into being logether with a decrease in Cu2O phase after annealing at 500℃. Possible reason is that annealing at different temperatures causes a special ratio of Cu/O in some special diffusion area; which determines the formation of reactive production between Cu and SiCOF. Furthermore, C-Cu bond is not formed during sputtering deposition of copper, and even after the annealing.
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