-
52浏览
-
0点赞
-
0收藏
-
0分享
-
62下载
-
0评论
-
引用
期刊论文
The influence of Ar addition on the structure of an a-SiOCF film prepared by plasma-enhanced chemical vapour deposition
J. Phys. D: Appl. Phys. 34(2001)155-159,-0001,():
The preparation of a-SiOCF films from Si (OC2H5) 4, C4F8 and/or Ar using a plasma-enhanced chemical vapour deposition method is reported. The chemical bonding structures of the films are analysed by high-resolution x-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. The results show that the films contain F-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F configurations. However, as for the film deposited from the feeding gases with Ar, a C-C configuration is also included in addition to the above-mentioned configurations. This indicates that the existence of Ar in the plasma leads to the formation of a fluorocarbon structure with a high degree of cross-linking. No evidence reveals the presence of a Si-C bond in the film, so it is believed that the fluorocarbon is perhaps embedded into the matrix of SiOF.
【免责声明】以下全部内容由[张卫]上传于[2005年10月31日 18时35分12秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。
本学者其他成果
同领域成果