-
30浏览
-
0点赞
-
0收藏
-
0分享
-
132下载
-
0评论
-
引用
期刊论文
Spin-polarized tunneling and magnetoresistance in ferromagnet/insulator
PHYSICAL REVIEW B, VOLUME 56 1 SEPTEMBER 1997-I,-0001,():
Based on the two-band model, we present a transfer-matrix treatment of the tunnel conductance and magnetoresistance for tunneling through ferromagnet/insulator (semiconductor) single junctions and double junctions subject to a dc bias. Our results are qualitatively in agreement with the experimental measurements for the single junction. For the double junction, we find that there exists, spin-polarized resonant tunneling and giant tunnel magnetoresistance. The highest value of the magnetoresistance in a double junction can reach 90%. We anticipate that our results will stimulate some interest in experimental efforts in designing spinpolarized resonant-tunneling devices.
【免责声明】以下全部内容由[张向东]上传于[2005年07月27日 23时31分07秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。
本学者其他成果
同领域成果