您当前所在位置: 首页 > 学者

赵宏伟

  • 38浏览

  • 0点赞

  • 0收藏

  • 0分享

  • 205下载

  • 0评论

  • 引用

期刊论文

Surface and subsurface damages in nanoindentation tests of compound semiconductor InP

赵宏伟

,-0001,():

URL:

摘要/描述

Nanoindentation tests were conducted on single-crystal indium phosphide (InP) using a Vickers indenter and a spherical indenter over a wide load range. The resulting indents were examined using scanning electron microscopy, cross-sectional transmission electron microscopy and selected area diffraction. Effects of the indenter type and indentation load on the surface cracking behavior, load–displacement characteristics and subsurface damage were investigated. The results showed that the cracking behavior and critical load for crack generation depends strongly on the indenter geometry and orientation. Pop-in events occur during loading in the case of the spherical indenter, but not in the case of the Vickers indenter. It was demonstrated that dislocations dominate the deformation mechanism, and no phase transformation occurs. The indenter contact immediately causes a high-density dislocation region, below which extend slip bands. The stress field of the indented zone was simulated by the finite element method, and the stress concentration regions corresponded to the high-density dislocation regions.

关键词:

【免责声明】以下全部内容由[赵宏伟]上传于[2009年06月04日 17时59分43秒],版权归原创者所有。本文仅代表作者本人观点,与本网站无关。本网站对文中陈述、观点判断保持中立,不对所包含内容的准确性、可靠性或完整性提供任何明示或暗示的保证。请读者仅作参考,并请自行承担全部责任。

我要评论

全部评论 0

本学者其他成果

    同领域成果