佘峻聪
博士 教授 博士生导师
中山大学 电子与信息工程学院
微纳真空逻辑器件及物理、多场耦合真空微纳光电子器件及物理、真空微纳电子源及应用、微纳加工集成新方法
个性化签名
- 姓名:佘峻聪
- 目前身份:在职研究人员
- 担任导师情况:博士生导师
- 学位:博士
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学术头衔:
教育部“新世纪优秀人才支持计划”入选者, 博士生导师
- 职称:高级-教授
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学科领域:
微电子学
- 研究兴趣:微纳真空逻辑器件及物理、多场耦合真空微纳光电子器件及物理、真空微纳电子源及应用、微纳加工集成新方法
佘峻聪,教授;国家基金委优秀青年基金项目获得者(2012年);广东省珠江学者特聘教授(2013年);教育部新世纪人才计划入选者(2010年);全国优秀博士学位论文奖获得者(2008年);中山大学“百人计划”引进人才。
教育经历:
1997年6月,获中山大学物理学学士学位;
1999年9月,硕转博(中山大学;导师:许宁生院士);
2001-2002年,英国卢瑟福阿普尔顿实验室微结构中心访学;
2005年12月,获中山大学凝聚态物理学博士学位(导师:许宁生院士)。
研究方向:
微纳真空逻辑器件及物理、多场耦合真空微纳光电子器件及物理、真空微纳电子源及应用、微纳加工集成新方法。
科研项目:
主持国家省部级等项目16项,包括国家基金优秀青年基金项目、广东省基金重点项目、广东省高层次人才项目。
作为骨干参加国家“973”项目、国家纳米重大研究计划项目、国家基金委创新群体项目。
学术兼职和社会服务:
1.第28届(2015年)国际真空纳电子学会议(IVNC)共同主席;第29届和30届IVNC程序委员会委员;
2.Advanced Materials、Nano Letters、ACS Nano、Nanoscale、ACS Photonics、IEEE TED、IEEE EDL等期刊审稿人;
3.中国真空学会 电子材料与器件、等离子体分会 秘书长(2014-2019年);
4.《真空与低温》杂志第八届编委 (2019-2021年)。
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主页访问
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成果阅读
2348
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成果数
33
【期刊论文】https://avs.scitation.org/doi/abs/10.1116/1.590600
Journal of Vacuum Science & Technology B,1999,17(2):592
1999年04月09日
Details are given of experiments carried out to compare the field electron emission characteristics of single crystal silicon tip arrays with and without amorphous diamond (a-D) coating. The coatings on the tip arrays were prepared using the filtered vacuum arc plasma deposition technique. In addition, the optical and electrical properties of the a-D coatings were measured. An anode probe technique was employed to measure the current–voltage characteristics and turn-on fields of the tip-array emitters before and after coating. It is found that the coating enhances the emission. The physical reasons for these effects are discussed.
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【期刊论文】Preparation and characterization of the [CaCu(bet)4](ClO4)4 thin films
Thin Solid Films,1999,39(1-2):225-229
1999年07月30日
Details are given of an experimental study on the deposition process of CaCuB (B = betaine) thin films and their optical and electrical properties. It is demonstrated that such films may be prepared using thermal evaporation technique. The films were characterized by using Fourier transform infrared spectroscopy (FTIR), electron probe microanalyses (EPM) and scanning electron microscope (SEM). Similar infrared spectra were obtained for both the films and the powder samples. Results of EPM show that each element of the chemical compound was distributed evenly in the evaporated films. In addition, electrical conductivity, optical absorption and fluorescent spectra of the film were measured. The results reveal that the evaporated compound is a wide band gap insulator. Significant fluorescence was detected and the spectrum with peak at 409 nm was recorded.
Deposition Optical and electrical properties CaCuB thin films Fluorescence
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Ultramicroscopy,1999,79(1-4):149-153
1999年09月01日
Cold cathode field electron emission from thin films of a new organic compound Ca–Cu–B (B=betain) is observed. The microstructure of the film grown on an Al substrate by thermal evaporating technique is examined by scanning electron microscope and electron probe microanalysis, and it is found that a large number of carbon microparticles are embedded in the film. A transparent anode is used to image the spatial distribution of the emission sites and to measure the I–V characteristics, stability and turn-on field of the films. It is proposed that the presence of embedded carbon inclusions are responsible for the emission.
Ca–Cu–B thin film Field emission characteristics Conduction path
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【期刊论文】Silicon tip arrays with ultrathin amorphous diamond apexes
Appl. Phys. Lett.,2002,81(12):4257
2002年11月19日
Silicon (Si) tip emitter arrays with uniform, smooth, and ultrathin (∼2 nm) amorphous diamond (a-D) apexes were fabricated. Aqueous buffer hydrofluoric acid and H2/Ar plasma have been employed to remove the native oxide layer of Si tips, prior to the a-D film deposition. Scanning electron microscopy study showed that uniform a-D coatings were highly localized on the apex of individual Si tips. Study using high-resolution transmission electron microscopy and x-ray energy dispersive spectroscopy confirmed that the Si/a-D junction is free from the oxide interlayer. Field-emission measurements demonstrated that the removal of the native oxide layer and the a-D apex coating are important to stabilize and enhance the electron emission from Si field emitters.
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【期刊论文】Vacuum breakdown of carbon-nanotube field emitters on a silicon tip
Appl. Phys. Lett. ,2003,83(13):2671
2003年09月23日
Findings are given from the experimental observation of the vacuum breakdown of carbon-nanotube (CNT) field emitters on a Si tip. The CNTs were grown on the apex of a Si microtip by microwave plasma-enhanced chemical vapor deposition. The electrical contact of the CNT-Si junction was shown to be of ohmic type. A fine tungsten microprobe in combination with a scanning electron microscopy (SEM) system was employed for both the field emission and the contact conductivity measurements. This arrangement allows to precisely measure the characteristics of individual CNT and to in situ inspect the morphology of the CNT emitters on Si tips before and after vacuum breakdown events. An upper limit in emission current density of ∼103 A/m2 from the CNT emitters was recorded before a vacuum breakdown event is initiated. Clear evidence was found to show that the vacuum breakdown of the CNTs results in melting of the Si tip. These findings enhance the understanding of the failure mechanism of CNT emitters. It also has important technical implication to the development of ultrabright electron source.
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【期刊论文】Experimental evidence of resonant field emission from ultrathin amorphous diamond thin film
Surface and Interface Analysis,2004,36(5-6):461-464
2004年06月04日
Resonant field electron emission was observed from amorphous diamond thin film. An ultrathin, i.e. ∼2 nm, amorphous diamond thin film highly localize on a single sharp Si tip apex was used for the experiments. Tip specimens were fabricated by state‐of‐the‐art microfabrication techniques, including high‐resolution electron beam lithography, plasma dry etching and local amorphous diamond deposition on the tip apex. It was observed from current–field (I–E) characteristics that in the applied macro‐field of typically 11–12 MV m−1 there are reversible and relatively strong current peaks, in contrast to the normal current instability phenomenon. The results confirm the effect of resonant tunnelling from amorphous diamond thin films. Copyright © 2004 John Wiley & Sons, Ltd.
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【期刊论文】Field electron emission of Si nanotips with apexes of various compositions
Appl. Phys. Lett.,2005,87(5):052105
2005年07月26日
We report procedure with use of self-assembled silicon carbide (SiC) nanomasks for preparation of ultrahigh-density Si nanotips. Si nanotips with SiC apex may be firstly prepared in a CH4∕H2 plasma treatment and in a subsequent H2 plasma etching a SiC apex may be converted into an amorphous silicon (a-Si) one with an additional function of sharpening the nanotips. A comparative study of the field electron emission from the Si nanotips with apexes of SiC, a-Si and pure Si is carried out, and shows that nanotips with a-Si apexes have not only the highest field enhancement factor but also the best emission uniformity. The physical origins for the above two improvements in field emission are discussed. N.S.X., S.Z.D., and J.C. gratefully acknowledge the financial support of the projects from the NNSF (Grant Nos. 50021202, 90201020, and 60271026), STM (Grant Nos. 2003CB314700, 2002AA313010, and 2001CCA04400), ED of China, the STD, the ED of Guangdong Province, and the STD of Guangzhou City.
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Appl. Phys. Lett. ,2006,88(1):013112
2006年01月06日
A technique involving a combination of using self-assembled nanomask and anisotropic plasma etching is developed for fabricating vertically aligned single-crystalline Si nanowires (SiNWs). The SiNWs are shown to have excellent field emission performance with the turn-on field as low as 0.8MV∕m and the threshold field being 5.0MV∕m. In addition, an emission current density of 442mA/cm2 can be obtained at an applied field of ∼14MV∕m . The technique is easily employed to fabricate arrays of SiNW-based field emission microtriodes. Mechanisms are proposed to explain the formation of the SiNWs and the observed field emission properties. N.S.X., S.Z.D. and J.C. gratefully acknowledge the financial support of the projects from the National Natural Science Foundation of China (Grant No. 50021202, 90201020 and 60271026), Science and Technology Ministry of China (Grant Nos. 2003CB314700, 2002AA313010, and 2001CCA04400), Education Ministry of China, the Science and Technology Department of Guangdong Province, the Education Department of Guangdong Province, and the Science and Technology Department of Guangzhou City.
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【期刊论文】Arrays of vacuum microdiodes using uniform diamondlike-carbon tip apexes
Appl. Phys. Lett.,2006,89(23):233518
2006年12月08日
The authors report the fabrication and characterization of vacuum microdiode arrays using Si microtip with uniform diamondlike-carbon (DLC) apexes. The technique is based on the mass production procedure of integrated circuit devices. The typical turn-on voltage of the microdiode arrays is 50V, and it can provide emission current density up to 0.24A/cm2 at 210V. The developed diodes with coated apexes considerably surpass the diodes with virgin Si tip (98V/0.058A/cm2) in their performance. Thus, the microdiode with DLC coatings on Si tip apexes are attractive for applications in charge neutralizers and microwave amplifiers. The underlying physics responsible for the device operation is discussed. Four of the authors (N.S.X., S.Z.D., J.C., and J.C.S.) gratefully acknowledge the financial support of the projects from the National Natural Science Foundation of China (Grant Nos. 50021202, 90201020, 60271026, and 60601019), Science and Technology Ministry of China (Grant Nos. 2003CB314700, 2002AA313010, and 2001CCA04400), Education Ministry of China, the Science and Technology Department of Guangdong Province, the Education Department of Guangdong Province, and the Science and Technology Department of Guangzhou City. One of the authors (J.C.S.) is also thankful for the financial support of the projects from the Natural Science Foundation of Guangdong Province (Grant No. 06300340) and Sun Yat-sen University (Grant Nos. 2005300001131091 and 2006300003171310). The authors also thank the Royal Society of UK for the partial financial support in setting up the collaboration between SYSU and RAL.
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Appl. Phys. Lett.,2007,90(7):073103
2007年02月12日
The authors demonstrate that individual nanotips (W18O49) may be laser welded onto the supporting microtip. The nanotip-microtip assembly can be handheld or ready for further manual manipulation, and thus is very useful for individual nanowire’s characterization, selection, and applications in nanoprobe analysis, nano-optical and nanoelectronic devices, and biostudy. Well mechanical and electrical connections are shown between the nanotip-microtip. Field emission characterization shows that the welded nanotip is a promising candidate for point electron source application. Four of the authors (N.S.X., S.Z.D., J.C., and J.C.S.) acknowledge the financial support from the NNSF (Grant Nos. 50021202, 90201020, 60271026, and 60601019), STM (Grant Nos. 2003CB314700, 2002AA313010, and 2001CCA04400), EM of China and the STD, the ED of Guangdong Province, and the STD of Guangzhou City. One of the authors (J.C.S.) is also thankful for the financial support from the NSF of Guangdong Province (Grant No. 06300340) and SYSU (Grant Nos. 2005300001131091 and 2006300003171310).
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