陈治明
从事半导体材料与器件的教学与研究
个性化签名
- 姓名:陈治明
- 目前身份:
- 担任导师情况:
- 学位:
-
学术头衔:
博士生导师
- 职称:-
-
学科领域:
微电子学
- 研究兴趣:从事半导体材料与器件的教学与研究
陈治明,男,汉族,1945年10月生于四川涪陵(现属重庆直辖市)。1969年毕业于北京机械学院工程经济系,1981年毕业于中国科学院研究生院半导体材料物理专业。先后在加拿大西安大略大学、日本福井大学、美国辛辛那提大学和日本大学作过访问学者。1987年评为副教授,1992年晋升教授,1993年经国务院学位委员会评定为博士研究生导师。1991年10月至1995年8月任西安理工大学副校长,1995年8月至2004年10月任西安理工大学校长;现任西安理工大学学术委员会主席、陕西省新型半导体材料与设备工程研究中心主任。
学术兼职主要有:中国电工技术学会电力电子学会副理事长,中国电子学会半导体与集成技术分会委员,陕西电机工程学会副理事长,陕西省学位委员会委员,《半导体学报》编委,《电力电子技术》编委会副主任等。1992年起享受政府特殊津贴,1995年获国家机械工业科技专家称号,1999年获陕西省有突出贡献专家称号。
陈治明教授长期从事半导体材料与器件的教学与研究,先后主持完成国家重点科技攻关项目3项,中国科学院青年科学基金项目1项,国家自然科学基金资助项目6项,以及中央部委和地方政府下达的研究课题10余项;目前主持国家自然科学基金资助项目、国家教育部博士点基金项目、陕西省重大科技创新项目和工业攻关项目各1项。先后获省、部级科技进步二等奖3项、三等奖2项,省部级教学优秀成果一等奖1项、二等奖2项,优秀教材二等奖1项,西安市和厅、局级科研成果奖9项,已授权国家发明专利2项。
截止目前,已在国内外发表学术论文近200篇,其中近半数被SCI和(或)EI、ISTP检录,50余篇被他人引用;并在科学出版社先后出版著作《非晶半导体材料与器件》(1991年)和《半导体器件的材料物理学基础》(1999年),在机械工业出版社出版教材《电力电子器件基础》(1999年)、参编《电工材料应用手册》(第5章半导体材料,1999年),在化学工业出版社出版的《中国材料工程大典》(2006年)中担任第11卷第14篇《传感器材料》的主编。
陈治明教授先后培养了近40名硕士研究生,12名博士研究生,其中1人的学位论文被评为全国优秀博士学位论文,2人为陕西省优秀博士论文。
-
主页访问
3662
-
关注数
0
-
成果阅读
719
-
成果数
20
【期刊论文】Resonant tunneling in periodic multiple-barrier structures with compound-barrier unit
陈治明, X. D. ZHAO, H. YAMAMOTO, K. TANIGUCHI, Z. M. CHEN
Superlattices and Microstructures, Vol. 19, No. 4, 1996,-0001,():
-1年11月30日
Resonant tunneling in multiple-barrier structures with arbitrary potential profile is studied theoretically. Analytical expressions of the transmission coefficient and the resonance condition are derived by taking into account the mass difference between well and barrier layers. The basic barrier unit in the periodic multiple-barrier structure may be a compound-barrier structure, and the simplest compound-barrier unit is the double-barrier unit. Two independent resonance conditions exist in the multiple-barrier structures with compound-barrier unit and both the subband gap energy and the energy value at the center of the subband gap may be determined analytically and independently for the multiple-barrier structure with doublebarrier unit.
-
41浏览
-
0点赞
-
0收藏
-
0分享
-
223下载
-
0评论
-
引用
【期刊论文】Comparison of resonance conditions in double-barrier structures and triple-barrier structures
陈治明, X. D. Zha, H. Yamamoto, Z. M. Chen, K. Taniguchi
J. Appl. Phys. 79 (9), 1 May 1996,-0001,():
-1年11月30日
A theoretical analysis has been carried out to compare the resonance condition in the asymmetric double-barrier structure with that in the symmetric triple-barrier one. It is. found that. the triple-barrier structure may be considered as two quasidouble-barrier structures whose resonance condition may decide the resonance levels in the triple-barrier structure. It is confirmed that two modes exist in the triple-barrier structure: one is "normal mode consisting of doublet and the other is degenerated mode of singlet. The critical condition between the two modes is given and its physical meaning is examined. Moreover, it is confirmed that both the normal mode and the degenerated mode exist also in symmetric n-fold barrier structures (n≥3).
-
36浏览
-
0点赞
-
0收藏
-
0分享
-
67下载
-
0评论
-
引用
【期刊论文】A New. Design of Power Supplies for Pocket Computer Systems
陈治明, Jian Liu, Zhiming Chen, Senior Member, IEEE, and Zhong Du
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, VOL. 45, NO. 2, APRIL 1998,-0001,():
-1年11月30日
A new design of power supply based on the idea of switched capacitors, as applied to pocket computer systems, is presented. This new type of power supply is inductorless and, consequently, suitable for hybridization and even monolithic integration. The new design is also based on distinguishing characteristics of pocket digital computer systems, in which a switched-capacitor converter can work well, since minimal regulation is required. The new device may enable the pocket computer system to be powered by only one battery, resulting in a simple topology. Two switched-capacitor converters, +12 V/-12 V, +5 V and +5 V/+12 V, -12 V, are shown, respectively, as an example for demonstrating the basic principle and its performance. PSPICE simulation and laboratory models show good results for this new type of power supply.
DC-DC converters, switched-capacitor circuits
-
41浏览
-
0点赞
-
0收藏
-
1分享
-
91下载
-
0评论
-
引用
陈治明, J. N. Wang, Z. M. Chen, P. W. Woo, W. K. Ge, Y. Q. Wang, M. B. Yu
APPLIED PHYSICS LETTERS VOLUME 74, NUMBER 7, 15 FEBRUARY 1999,-0001,():
-1年11月30日
Intense wide-band photoluminescence (PL) was observed at room temperature from both SiC thin films grown on silicon substrates by hot-filament chemical vapor deposition and anodized SiC thin films formed by electrochemical anodization in HF-ethanol solution. It was found that prolonged irradiation with ultraviolet light from a He-Cd laser (325nm, 10mW) generally enhanced the PL intensity of as-grown SiC but induced a new PL band in anodized SiC at room temperature. The light-induced PL emission in anodized SiC was centered at the energy between 2.1 and 2.2eV in comparison with the initial peak position of about 1.9eV. These effects were also temperature dependent.
-
66浏览
-
0点赞
-
0收藏
-
0分享
-
65下载
-
0评论
-
引用
【期刊论文】Photoluminescence from Porous-Like SiC and Its Light-Induced Enhancement
陈治明, CHEN Zhi-ming, YU Ming-bin, WANG Jian-nong, HU Bao-bong
CHIN. PHYS. LETT. Vol. 16, No. 4 (1999),-0001,():
-1年11月30日
Intense photoluminescence (PL) from porous-like SiC has been observed at room temperature. The samples were prepared by electrochemical anodization from nanocrystalline SiC thin films grown on Si (100) substrates in hot filament chemical vapor deposition. It has been found that a light-induced enhancement of the PL intensity will take place if the incident light beam from an He-Cd laser (325nm, 10mW) is employed for the excitation. Blue-shift of the PL peak energy from about 1.9 eV of as-anodized samples to about 2.1 eV and an accompanied spectral widening have also been observed for a long enough irradiation time. However, the novel effects have not been observed at low temperature. Origin of the light-induced change is suggested to be related to some light-induced metastable defects.
-
31浏览
-
0点赞
-
0收藏
-
1分享
-
68下载
-
0评论
-
引用
陈治明, Z.M. Chen, J.P. Ma, M.B. Yu, J.N. Wang, W.K. Ge, P.W. Woo
Z. M. Chen et al. Materials Science and Engineering B 75 (2000) 180-183,-0001,():
-1年11月30日
Intense photoluminescence (PL) was observed at room temperature from porous SiC samples prepared in electrochemical anodization from nano-crystalline SiC thin films grown on Si (100) substrates by hot filament chemical vapor deposition. Raman scattering spectroscopy and high-resolution transmission electron microscopy confirmed the nano-crystalline structure of the host films. For the porous samples formed under weaker anodization conditions, it was found that prolonged irradiation with ultraviolet (UV) light from a He-Cd laser (325nm, 10mW) can induce an enhanced new PL band and change the peak energy from 1.9eV to 2.1eV at room temperature. A defect model is suggested to explain the UV light induced PL change in porous SiC.
SiC, Photoluminescence, Porous, Anodization
-
58浏览
-
0点赞
-
0收藏
-
0分享
-
30下载
-
0评论
-
引用
【期刊论文】Epitaxial monocrystalline SiC films grown on Si by HFCVD at 780
陈治明, Zhang Zhiyong, Zhao Wu, Wang Xuewen, Lei Tianming, Chen Zhiming, Zhou Shuixian
Z. Zhiyong et al. Materials Science and Engineering B75 (2000) 177-179,-0001,():
-1年11月30日
In this paper, our work is reported on heteroepitaxial monocrystalline SiC films deposited on single-crystalline (111) silicon by hot filament chemical vapor deposition (HFCVD) with a gas mixture of methane, silane and hydrogen at a low temperature of 780℃. The surface micrography and thickness of SiC films on Si (111) substrate were analyzed by scanning electron microscopy (SEM). The characteristics and crystallinity of the SiC film were examined by X-ray diffrac tometer (XRD), transmission electron microscopy (TEM) and auger electron spectrum (AES). The peaks of Si (111), SiC (111) and SiC (222) planes were observed on the X-ray diffraction spectrum, but not the peaks of the SiC (200) or SiC (220) planes. The diffraction pattern of TEM also indicates that the SiC films are single-crystalline structure. AES shows that the element ratio of silicon and carbon in the SiC film is 1:1.004. The preparation conditions were as follows: a filament temperature of 2100℃, substrate temperature of 780°C, hydrogen flow rate of 100 sccm, methane concentration of 8.0%, silane concentration of 1.0% and a reaction pressure of 150 Pa.
Silicon carbide, Hot filament CVD method, Low temperature growth, Thin film
-
43浏览
-
0点赞
-
0收藏
-
0分享
-
22下载
-
0评论
-
引用
陈治明, M. B. Yu, Rusli, S. F. Yoon, Z. M. Chen, J. Ahn, Q. Zhang, K. Chew, J. Cui
JOURNAL OF APPLIED PHYSICS VOLUME 87, NUMBER 11, 1 JUNE 2000,-0001,():
-1年11月30日
Nanocrystalline cubic silicon carbide (3C-SiC) films embedded in an amorphous SiC matrix were fabricated by the hot-filament chemical-vapor-deposition technique using methane and silane as reactance gases. High-resolution transmission electron micrographs clearly showed that these films contain naoncrystallites, with an average dimension of about 7 nm, embedded within an amorphous matrix: X-ray photoelectron spectroscopy, x-ray diffraction, infrared absorption, and Raman scattering studies revealed the nanocrystallites as having the structure of that of 3C-SiC. In contrast to 3C-SiC, where no photoluminescence could be observed at room temperature, strong visible emission with a peak energy of 2.2 eV could be seen from the nanocrystalline films at room temperature. The presence of nanocrystalline cubic SiC in these films is believed to result in a change in their energy-band structure, compared to that of 3C-SiC, which promotes radiative recombination of electron-hole pairs.
-
60浏览
-
0点赞
-
0收藏
-
0分享
-
22下载
-
0评论
-
引用
【期刊论文】Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt
陈治明, CHEN Zhi-Ming, MA Jian-Ping, WANG Jian-Nong, LU Gang, YU Ming-Bin, LEI Tian-Min, GE Wei-Kun
CHIN. PHYS. LETT. Vol. 17, No. 10 (2000) 770,-0001,():
-1年11月30日
Intense wide-band photoluminescence (PL) with high stability to ultraviolet (UV) light irradiation has been observed in a wide temperature range from a polycrystalline SiC sintered from graphite and melt Si at high temperature over 1500
-
30浏览
-
0点赞
-
0收藏
-
0分享
-
30下载
-
0评论
-
引用
【期刊论文】Liquid phase epitaxial growth of 3C-SiC films deposited on Si
陈治明, Zhiming Chen, Jianping Ma, Gang Lu, Tianmin Lei, Mingbin Yu, Lianmao Hang, Xianfeng Feng
Z. Chen et al. Biamond and Related Materials 10 (2001) 1255-1258,-0001,():
-1年11月30日
In this paper, we present a novel method to grow 3C-SiC crystal in a liquid-phase epitaxy-like manner, but without any substantial substrate. The starting material to be used in this method is the 3C-SiC-thin film deposited on Si substrate in a gas-phase heteroepitaxial technology. The free 3C-SiC film which remained of the molten Si substrate epitaxially grows up from the Si solution saturated by SiC in a highly purified graphite crucible heated by an inductive heater. XRD, XPS and Raman spectroscopy were used to characterize the samples. The only one peak with full width at half maximum (FWHM) of 0.2 at 20 = 35.65
Carbides, 3C-SiC, Crystal growth, Characterization
-
39浏览
-
0点赞
-
0收藏
-
1分享
-
31下载
-
0评论
-
引用