杨传仁
研究方向包括敏感材料及元器件、电子陶瓷材料与器件、微波陶瓷材料与器件、铁电薄膜与微波器件、纳米材料
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- 姓名:杨传仁
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学术头衔:
博士生导师
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学科领域:
制糖技术
- 研究兴趣:研究方向包括敏感材料及元器件、电子陶瓷材料与器件、微波陶瓷材料与器件、铁电薄膜与微波器件、纳米材料
教授,博士生导师,1949年生。1982年2月本科毕业于成都电讯工程学院,1990年5月获硕士学位。1993年评为副教授,1999年评为教授,2001年聘为博导。美国IEEE会员,中国电子学会高级会员,中国雷达协会理事单位联络员,中国传感器学会委员(1993年至2004年任温敏专业委员会主任委员)。“十五”期间为国防“973”项目负责人之一。
长期从事电子材料与元器件教学和科研工作。先后承担和完成国家、部级科研项目8项,研究方向包括敏感材料及元器件、电子陶瓷材料与器件、微波陶瓷材料与器件、铁电薄膜与微波器件、纳米材料。获部级科技成果二等奖三项,三等奖一项。主讲电子陶瓷物理、高技术陶瓷导论、电子测量技术、新型电子元器件等课程。
在《Appl. Phys. Lett.》、《J. Appl. Phys.》、《Nanotechnology》、《J。Phys. D》、《Integrated Ferroelectrics》、《硅酸盐学报》等刊物及IEEE、SPIE等国内外学术会议发表文章100余篇,其中被SCI收录50余篇,EI收录60余篇,ISTP收录4篇。申请发明专利10余项。
长期从事高层次人才培养,已培养博士研究生5人、硕士研究生30余人,在读15人。目前的研究方向为电子薄膜与集成器件物理、铁电薄膜材料与微波器件、电光薄膜与器件、薄膜集成电路等,在研项目包括973、自然科学基金以及其他军、民口项目。希望有志于发展电子材料与元器件事业的人才前来攻读博士学位或从事博士后研究。
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15
【期刊论文】Thermodynamic equilibrium model of pyroelectric polycrystalline thin films
杨传仁, Wencheng Hu, Chuanren Yang, Wanli Zhang, and Xiyi Liao
APPLIED PHYSICS LETTERS 90, 152902 (2007),-0001,():
-1年11月30日
This study deals with the thermodynamic equilibrium theory of pyroelectric polycrystalline thin films. The unit cell of pyroelectric polycrystalline thin films in the ferroelectric phase to be considered is assumed as a dipole and is a nondipole at its paraelectric phase. The phase transition between ferroelectric and paraelectric phases is hypothesized as an equilibrium of the dipoles and the nondipole. Based on the thermodynamic equilibrium theory, an expression formula about the spontaneous polarization and temperature is suggested. Considering the sandwich structure of pyroelectric polycrystalline thin films, an equation about the relations between pyroelectric coefficient and temperature was established.
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【期刊论文】Model for dielectric nonlinearity of ferroelectrics
杨传仁, Chunlin Fu, Chuanren Yang, Hongwei Chen, and Liye Hu
JOURNAL OF APPLIED PHYSICS 97, 034110 (2005),-0001,():
-1年11月30日
Dielectric nonlinearity is an important characteristic of ferroelectrics. Based on the characteristics of hysteresis loops and ε-E curves in ferroelectric materials, a model for dielectric nonlinearity of ferroelectrics is established. It is verified by the data of barium strontium titanate thin films.
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杨传仁, W.J.Leng, C.R.Yang, J.H.Zhang, H.W.Chen, H.Ji, C.L.Fu, and J.X.Liao
JOURNAL OF APPLIED PHYSICS 99, 114904 (2006),-0001,():
-1年11月30日
BaxSr1-xTiO3 (x=0. 6 and 0. 8) thin films have been prepared on indium-doped tin oxide (ITO) coated quartz substrates using radio-frequency magnetron sputtering. Their structural properties and surface morphologies were examined by x-ray diffraction and atomic force microscopy, respectively. The BaxSr1-xTiO3 (BST) thin films with x=0. 6 and 0. 8 annealed at 650°C for 20 min exhibit good surface morphology and well-crystallized perovskite structure. High quality BST ferroelectric thin films were further investigated by electrical measurements, showing the remnant polarization (Pr) of 6. 75 μC/cm2 and the coercive field Ec of 43. 2 kV/cm. Optical transmittance measurement indicated that the Ba concentration has an effect on the band gap energy Eg structure of the BaxSr1-xTiO3 thin films. The Eg decreases linearly with the increase of the Ba content. The refractive index n and extinction coefficient k of the BST films with x=0. 6 and 0. 8 were obtained by fitting the spectroscopic ellipsometric data using a parametric dielectric function model. The refractive index n and extinction coefficient k increase with increasing wavelength. All of the results show that the BST/ITO/quartz heterostructure is promising for applications in integrated optical waveguide devices.
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杨传仁, W.J.Leng, C.R.Yang, H.Ji, J.H.Zhang, H.W.Chen, and J.L.Tang
JOURNAL OF APPLIED PHYSICS 100, 083505 (2006),-0001,():
-1年11月30日
To be suitable for integrated optical devices, (Pb, La)(Zr, Ti)O3 PLZT ferroelectric thin films require high crystalline quality, low surface roughness, high optical index, and high transparency. In this paper, PLZT thin films have been grown in situ on indium tin oxide (ITO) coated quartz substrates by rf magnetron sputtering. X-ray diffraction, scanning electron microscopy (SEM), and atomic force microscopy (AFM) were used to investigate the structural properties of these PLZT films. The results show that the ferroelectric films exhibit satisfying crystallization with the highly 110-oriented growth from 550°C, and the surface roughness value (~3. 1 nm) in studied films is within the optimum range so that a low optical loss can be obtained. High quality PLZT ferroelectric thin films were further investigated by electrical measurements, showing that the remnant polarization Pr and coercive field Ec are approximately 11. 3 μC/cm2 and 56. 2 kV/cm, respectively. Spectroscopic ellipsometry (SE) was employed to characterize the depth profiles, the microstructural inhomogeneities (void and surface roughness), refractive index n, and extinction coefficient k of the PLZT film. In the analysis of the measured SE spectra, a three-layer Lorentz model with four oscillators was adopted to represent the optical properties of the PLZT film. In this model, the film was assumed to consist of two layers a bottom bulk PLZT and a surface layer composed of bulk PLZT as well as void. Good agreement was obtained between the measured spectra and the model calculations. The film thickness measured from SEM is consistent with that obtained by SE, while the root mean square roughness determined by AFM is also close to our fitted effective surface layer thickness obtained by SE. The PLZT thin film on ITO-coated quartz substrate is highly transparent in the visible near infrared wavelength region, and the band gap energy Eg is estimated to be 3. 54 eV. The experimental results above tend to demonstrate the suitability of the PLZT films in situ grown on ITO/quartz substrates for optical applications. @2006 American Institute of Physics.
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杨传仁, W.J.Leng, C.R.Yang, H.Ji, J.H.Zhang, J.L.Tang, and H.W.Chen
JOURNAL OF APPLIED PHYSICS 100, 106102 (2006),-0001,():
-1年11月30日
(Pb, La)(Zr, Ti)O3 PLZT thin films were grown on Pt/Ti/SiO2/Si and fused quartz substrates by radio-frequency magnetron sputtering at 650
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【期刊论文】Large third-order optical nonlinearity in(Pb,La)(Zr,Ti)O3 ferroelectric thin film
杨传仁, W.J.Leng, C.R.Yang, H.Ji, J.H.Zhang, J.L.Tang, and H.W.Chen
JOURNAL OF APPLIED PHYSICS 100, 126101 (2006),-0001,():
-1年11月30日
Ferroelectric Pb0. 92La0. 08 Zr0. 65Ti0. 35 O3 PLZT film with good surface morphology and perovskite structure was grown in situ on quartz substrate by radio-frequency magnetron sputtering at 650
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杨传仁, Jihua Zhang, Xi Wang, Wenwei Yang, Weidong Yu, Tao Feng, Qiong Li, Xianghuai Liu, Chuanren Yang
J. Zhang et al. Carbon 44 (2006) 418-422,-0001,():
-1年11月30日
The interaction between carbon nanotubes(CNTs) and substrate plays an important role in the process of field emission. A doublebarrier model is adopted to analyze the di?erence of field emission for various CNT films. Result shows that the width of interface barrier determines the emission performance. For CNTs on titanium, the best emission performance is attributed to the removal of interlayer barrier by the formation of conductive titanium carbide. These facts might shed new light on the field emission mechanism for CNTs.
Carbon nanotubes, Chemical vapor deposition, Field emission, Electronic band structure
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【期刊论文】Improvement of the field emission of carbon nanotubes by hafnium coating and annealing
杨传仁, Jihua Zhang, , Chuanren Yang, Yongjin Wang, Tao Feng, Weidong Yu, Jun Jiang, Xi Wang and Xianghuai Liu
Institute of Physics Publishing Nanotechnology Nanotechnology 17 (2006) 257-260,-0001,():
-1年11月30日
Despite the promising field emission properties, as-grown carbon nanotubes (CNTs)are far from perfect and need improvement. We report on the field electron emission properties of hafnium coated CNTs. The result shows hafnium carbide(HfC) can be formed on the surface of CNT films at an annealing temperature of 1200℃. This treatment improves the field emission current density, emission uniformity and emission stability of CNT films. The improvement of field emission by Hf coating on the CNT surface benefits from the formation of HfC, which is conductive, inert, robust and of low work function. This approach may provide an effective method for the modification of the field emission of CNTs.
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杨传仁, Wenjian LENG, Chuanren YANG, Jihua ZHANG, Hongwei CHEN, Wencheng HU, Hong JI, Jinlong TANG, Wenfeng QIN, Junjian LI, , Hui LIN, and Lifeng GAO
Japanese Journal of Applied Physics Vol. 46, No. 1, 2007, pp. L7-L9,-0001,():
-1年11月30日
Lanthanum-modified lead zirconate titanate(Pb, La)(Zr, Ti)O3(PLZT)ferroelectric thin films with perovskite structure were fabricated on quartz substrates by rf magnetron sputtering at 650 C. Their optical fundamental constants(the band gap, linear refractive index, and absorption coefficient) were obtained through optical transmittance measurements with the envelope method. The nonlinear optical properties of the PLZT films were investigated by the Z-scan technique. The films display strong nonlinear optical e?ects. A negative nonlinear refractive index n2 is determined to be 1. 21*10-6 esu in the films. These results show that the PLZT ferroelectric thin films are promising materials for nonlinear optics.
(, Pb,, La), (, Zr,, Ti), O3,, rf magnetron sputtering,, nonlinear optical properties,, Z-scan technique
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杨传仁, Wenjian Leng, , Chuanren Yang, Hong Ji, Jihua Zhang, Jinlong Tang, Hongwei Chen and Lifeng Gao
J. Phys. D: Appl. Phys. 40 (2007) 1206-1210,-0001,():
-1年11月30日
Linear and nonlinear optical properties of lanthanum-modified lead zirconate titanate(Pb0. 92La0. 08)(Zr0. 65Ti0. 35)O3(PLZT 8/65/35) ferroelectric thin films are presented in this paper. The PLZT ferroelectric thin films were grown on quartz substrates by radio-frequency magnetron sputtering at 650℃. Their crystalline structure and surface morphologies were examined by x-ray diffraction and atomic force microscopy, respectively. It was found that the PLZT thin films exhibit well-crystallized perovskite structure and good surface morphology. The fundamental optical constants(the band gap energy, linear refractive index and absorption coefficient)were obtained through the optical transmittance measurements. A Z-scan technique was used to investigate the optical nonlinearity of the PLZT thin films on quartz substrates. The films display a strong third-order nonlinear optical effect. A large and negative nonlinear refractive index n2 is determined to be 1. 21×10-6 esu for the PLZT thin films. All results show that the PLZT ferroelectric thin films have potential applications in nonlinear optical devices.
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