杨德仁
博士研究生 教授
浙江大学
超大规模集成电路用硅材料,太阳能光伏硅材料、硅基光电子材料和纳米硅半导体材料
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- 姓名:杨德仁
- 目前身份:在职研究人员
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师, 中国科学院院士
- 职称:高级-教授
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学科领域:
材料科学基础学科
- 研究兴趣:超大规模集成电路用硅材料,太阳能光伏硅材料、硅基光电子材料和纳米硅半导体材料
杨德仁,1964年4月出生,教授,博士生导师,现任浙江大学工学部主任,半导体材料研究所所长,硅材料国家重点实验室学术委员会主任。国家自然科学基金创新研究群体、科技部重点领域创新团队和浙江省重点科技创新团队负责人。其领衔完成的“微量掺锗直拉硅单晶技术及其应用”项目获得国家技术发明奖二等奖。
1985年浙江大学材料系本科毕业,1991年浙江大学材料系(硅材料国家重点实验室)获半导体材料工学博士,1993年浙江大学博士后流动站出站,并晋升副教授,其间在日本东北大学金属材料研究所访问工作。1995年初赴德国FREIBERG工业大学工作,1997年5月被浙江大学特批晋升教授,1998年初回国在材料(系)学院半导体材料研究所(硅材料国家重点实验室)工作。2017年入选中国科学院院士。
长期从事半导体硅材料的研究,包括超大规模集成电路用硅材料,太阳能光伏硅材料、硅基光电子材料和纳米硅半导体材料。主持(曾负责)国家973、863、国家科技重大专项、国家自然科学基金重点、科技部、教育部和浙江省的重大、重点科技项目等科技项目,在硅材料的基础研究上取得重大成果,生产实际中也产生重大经济效益。以第一获奖人获得国家自然科学二等奖2项,国家技术发明二等奖1项,浙江省科学技术一等奖4项,省部级科学技术二等、三等奖及其他科技奖6项;以第二获奖人获得省部一等奖1项、二等奖2项。在国际学术刊物发表SCI检索论文840多篇,SCI论文他引16100多次,H因子64。曾获第九届中国青年科技奖(2006年),浙江省 “十大时代先锋” (2006年),国务院政府特殊津贴(2010年),浙江省特级专家(2011年),全国优秀科技工作者(2012年),全国劳动五一奖章(2016年),浙江省劳动模范(2016年),Elesvier中国高被引学者(2014-2019年)等荣誉。
兼任国家重大科技专项(02)总体专家组成员,中国可再生能源学会常务理事,光伏专业委员会副主任等,兼任Superlattices and Microstructures主编,以及Journal of Silicon,Physica Solidi State等4个国际学术刊物编委。
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成果数
12
杨德仁, Junjie NIU, Jian SHA, Qing YANG and Deren YANG
Japanese Journal of Applied Physics Vol. 43, No. 7A, 2004, pp. 4460-4461,-0001,():
-1年11月30日
Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs with nearly amorphous structure were fabricated at 500℃; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800 C. The average diameter and length of the SiNWs are 40-70 nm and 10 mm, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.
nanowires,, silicon,, crystalline,, annealing
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【期刊论文】Aligned single crystal MgB2 nanowires
杨德仁, Qing Yang, Jian Sha, , Xiangyang Ma, Yujie Ji and Deren Yang
Supercond. Sci. Technol. 17(2004)L31-L33,-0001,():
-1年11月30日
Aligned single crystal superconducting MgB2 nanowires were synthesized on nano-channel-Al2O3 (NCA) substrates. At first, aligned single crystal boron nanowires were prepared by the chemical vapour deposition process. Then magnesium was incorporated in a sealed vacuum quartz tube to form aligned single crystal superconducting MgB2 nanowires. The diameters of the MgB2 nanowires were in the range of 20-150nm. Finally, there are indications that the nanowires had a superconducting transition temperature (Tc) at ~33 K.
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【期刊论文】Synthesis of MgO nanotube bundles
杨德仁, Qing Yang, Jian Sha, , LeiWang, Youwen Wang, Xiangyang Ma, Jun Wang and Deren Yang
Nanotechnology 15(2004)1004-1008,-0001,():
-1年11月30日
Non-filled MgO nanotube bundles have been fabricated via a thermal evaporation method using Mg strips as the source material. The samples were characterized using x-ray diffraction, scanning electron microscopy and transmission electron microscopy. The as-synthesized nanotubes self-assembled into bundles, and the nanotubes in a bundle had the same growth direction. The nanotubes are about 100 nm in diameter and several micrometres in length. The possible growth process for the MgO nanotube bundles has been discussed.
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杨德仁, Hongjie Wang, Xiangyang Ma, Jin Xu, Xuegong Yu and Deren Yang
Semicond. Sci. Technol. 19(2004)715-719,-0001,():
-1年11月30日
The thermal stability of oxygen precipitates formed by prolonged annealing at 1000℃ in conventional Czochralski silicon and nitrogen-doped Czochralski silicon has been comparatively investigated. It was found that a majority of the existing oxygen precipitates in the nitrogen-doped silicon were dissolved by both conventional furnace annealing and rapid thermal annealing at 1200℃, while those in the conventional Czochralski silicon dissolved at 1250℃, as a result of nitrogen enhancing denser oxygen precipitates with smaller size. Furthermore, it can be considered that the dissolution of oxygen precipitates is primarily determined by the annealing temperature.
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【期刊论文】Raman spectrum of array-ordered crystalline silicon nanowires
杨德仁, Jianxun Liua, Junjie Niub, Deren Yangb, Mi Yanc, Jian Shaa, b, *
Physica E 23(2004)221-225,-0001,():
-1年11月30日
Array-ordered single-crystal silicon nanowires were fabricated by the nanochannel-aluminal and CVD method. The average length and diameter of the nanowires is about 10 mm and 60 nm, respectively. A study of the Raman spectrum of the nanowires shows that the Raman shift to low frequency is due to the quantum confinement effect, which is discussed by using the phonon confinement model. Also we determine the peaks of the Raman spectrum to be corresponding to that of crystal silicon (c-Si).
Nanowires, Raman spectra, Phonon confinement model
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【期刊论文】Silicon nanowires fabricatedby thermal evaporation of silicon monoxide
杨德仁, Junjie Niua, Jian Shaa;b, Deren Yanga;∗
Physica E 23(2004)131-134,-0001,():
-1年11月30日
A large-scale crystalline silicon nanowires (SiNWs) with a diameter of ∼30 nm andlength of tens of micrometers on Al2O3 templates andsilicon wafers were synthesizedby the thermal evaporation of silicon monoxide (SiO). The SiNWs were measuredby transmission electron microscopy, scanning electron microscopy, X-ray di4raction andRaman spectroscopy, respectively. It was pointedout that the SiNWs possessedthe well crystalline structure. Therefore, it is consideredthat SiO couldbe usedas Si sources to produce larger-scale SiNWs andcrystalline SiNWs may grow from amorphous nuclei.
Nanowires, Silicon, Thermal evaporation
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【期刊论文】Tiny SiO2 nano-wires synthesized on Si (111) wafer
杨德仁, Junjie Niua, Jian Shaa;b, Niansheng Zhangb, Yujie Jia, Xiangyang Maa, Deren Yanga;∗
Physica E 23(2004)1-4,-0001,():
-1年11月30日
Tiny SiO2 nano-wires (SiO2-NWs) were synthesized on a p-Si (1 1 1) wafer by the chemical-vapor-deposition method. The minimum diameter of the nano-wires was around 9 nm, and the length was longer than 10μm. The results of transmission electron microscopy shows that the amorphous nano-wires were composed of Si and O with an approximate atomic ratio of 1:2. Furthermore, the photoluminescence behavior of the SiO2-NWs has been also checked.
Tiny SiO2 nano-wires, Synthesis, PL spectrum
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杨德仁, XiangyangMa, Lei Lin, Daxi Tian, Liming Fu and Deren Yang
J. Phys.: Condens. Matter 16(2004)3563-3569,-0001,():
-1年11月30日
g at 1050℃ in a Czochralski (CZ) silicon wafer has been investigated. It has been proved that the RTP-induced vacancies only enhance the early stage oxygen precipitation at 1050℃ in terms of the precipitation rate. Furthermore, it is somewhat unexpected that after a lengthy 1050℃ anneal the oxygen precipitates generated in the CZ silicon wafer with prior RTP treatment had considerably lower density and larger sizes in comparison with those generated in the CZ silicon wafer without prior RTP treatment. The reason for this is that the prior RTP treatmentwill dissolve some of the grown-in oxygen precipitates, thus making the RTP-treated wafer possess fewer nuclei contributing to oxygen precipitation in the subsequent 1050℃ anneal. Moreover, the numbers of resulting precipitated oxygen atoms due to a lengthy 1050℃ anneal were nearly the same in the CZ silicon wafers with and without prior RTP treatment. Additionally, it has been illustrated that the high temperature RTP has superior capability to dissolve the existing oxygen precipitates. It is worthwhile to point out that, when addressing the effect of RTP on the oxygen precipitation behaviour during the subsequent anneal, two functions arising from the RTP treatment, that is, the injection of vacancies into the silicon wafer and the dissolution of grown-in oxygen precipitates existing in the silicon wafer, should be taken into account.
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【期刊论文】Extended defects in nitrogen-doped Czochralski silicon during diode process
杨德仁, Jin Xu, Xiangyang Ma, Jinggang Lu, Chunlong Li, Deren Yang*c
Physica B 348(2004)226-230,-0001,():
-1年11月30日
The extended defects in nitrogen-doped Czochralski (NCZ) silicon and conventional Czochralski (CZ) silicon during the diode process were systematically investigated by means of optical microscopy and transmission electron microscopy. It was revealed that during the phosphorous diffusion (1230 C/2 h), the dislocations and stacking faults generated simultaneously in the NCZ silicon while in the CZ silicon only dislocations were observed. After the boron diffusion (1260 C/30 h), only dislocations as the extended defects were observed in both the NCZ and CZ silicon. It is preliminarily believed that the difference between the formation of extended defects in the NCZ and CZ silicon wafers is ascribed to the effect of nitrogen on oxygen precipitation.
Nitrogen, Silicon, Diode process, TEM
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【期刊论文】Deep-ultraviolet emission from an InGaAs semiconductor laser
杨德仁, S. M. Wang, a) Y. H. Shen, J. X. Xu, L. G. Hu, and J. Zhu, D. R. Yang and H. Zhang, Y. W. Zeng, J. Q. Yao
APPLIED PHYSICS LETTERS VOLUME 84, NUMBER 16 19 APRIL 2004,-0001,():
-1年11月30日
It is reported that a normal InGaAs laser diode (LD) operating at 980 nm possesses a second harmonic at 490 nm and a strong deep-UV emission at room temperature. By comparing with the radiation from cadmium sulphide (CdS) nanoparticles and nanowires, it is found that the UV emission from the LD can be attributed to a characterized radiation of nanoscaled semiconductors. By doping different semiconductor nanomaterials into the active layers of the LD and taking some effective techniques, such as cavity optimization, the avelength, and the power output of the UV emission could be adjusted.
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