牛智川
半导体低维结构材料的分子束外延生长、受限光子电子的量子物理效应、及光电子器件制备
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- 姓名:牛智川
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学术头衔:
博士生导师, “973”、“863”首席科学家, 国家杰出青年科学基金获得者, 教育部“新世纪优秀人才支持计划”入选者
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学科领域:
微电子学
- 研究兴趣:半导体低维结构材料的分子束外延生长、受限光子电子的量子物理效应、及光电子器件制备
牛智川,男,1963年4月生。中国科学院半导体所研究员,博士生导师。中国科学院半导体所理学博士,曾留学德国PDI固体电子学研究所、美国南加州大学材料系。中国真空学会纳米与表面学术委员,中国真空学会理事,中国电子学会委员。入选中国科学院“百人计划”、国家人事部“新世纪百千万人才工程国家级人选”、国家自然科学基金委“国家杰出青年科学基金”。研究领域:半导体低维结构材料的分子束外延生长、受限光子电子的量子物理效应、及光电子器件制备。近年来先后承担国家科技部“973”和“863”计划,国家基金委杰出青年、重点和面上,中科院知识创新工程方向性重点等十多个科研项目,在长波长InAs自组织量子点激光器制备,InAs单量子点和量子环生长及其量子态物理和量子器件研究,InGaAsNSb/GaAs量子阱激光器和探测器生长和制备,InGaAs异变长波长量子阱、量子点和超晶格结构生长等方面获得突出的研究成果。在国际SCI刊物发表论文50多篇,被他引300余次,并多次受到美国Technical Insights专刊,英国III-Vs Review杂志,英国物理学会(IOP, UK)等国际刊物和机构的关注和好评。
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13
【期刊论文】Electronic properties of GaAs/GayIn1-yNxAs1-y-xSby superlattices
牛智川, Z. C. Niu, H. Q. Ni, X. H. Xu, W. Zhang, Y. Q. Xu, R. H. Wu
PHYSICAL REVIEW B 68, 235326(2003),-0001,():
-1年11月30日
Using Keating’s semiempirical valence force field model and Monte Carlo simulation, we calculate the bond distributions and atom positions of GaAs/GaInNAsSb superlattices. The electronic structures of the superlattices are calculated using the folded spectrum method combined with an empirical pseudopotential proposed by Williamson et al. The effects of N and Sb on superlattice energy levels are discussed. The deterioration of the optical properties induced by N is explained by the localization of the conduction-band states around the N atom. The electron and hole effective masses of the superlattices are calculated and compared with the effective masses of the GaAs and GaInAs.
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牛智川, H. Q. Ni, Z. C. Niu, X. H. Xu, Y. Q. Xu, W. Zhang, X. Wei, L. F. Bian, Z. H. He, Q. Han, R. H. Wu
Appl. Phys. Lett. , Vol. 84, No. 25, 21 June 2004,-0001,():
-1年11月30日
High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 μm at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews–Blakeslee model.
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【期刊论文】Photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots under pressure
牛智川, B. S. Ma, X. D. Wang, F. H. Su, Z. L. Fang, K. Ding, Z. C. Niu, and G. H. Li
J. Appl. Phys. , Vol. 95, No. 3, 1 February 2004,-0001,():
-1年11月30日
The photoluminescence from self-assembled long-wavelength InAs/GaAs quantum dots was investigated at 15 K under hydrostatic pressure up to 9 GPa. Photoemission from both the ground and the first excited states in large InAs dots was observed. The pressure coefficients of the two emissions were 69 and 72 meV/GPa, respectively. A nonlinear elasticity theory was used to interpret the significantly small pressure coefficients of the large dots. The sequential quenching of the ground and the excited state emissions with increasing pressure suggests that the excited state emissions originate from the optical transitions between the first excited electron states and the first excited hole states.
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牛智川, Z.C. Niu, X.H. Xu, H.Q. Ni, Y.Q. Xu, Z.H. He, Q. Han, R.H. Wu
Journal of Crystal Growth 278(2005)558-563,-0001,():
-1年11月30日
Molecular beam epitaxy (MBE) growth of (InyGa1-yAs/GaAs1-xSbx)/GaAs bilayer quantum well (BQW) structures has been investigated. It is evidenced by photoluminescence (PL) that a strong blue shift of the PL peak energy of 47meV with increasing PL excitation power from 0.63 to 20mW was observed, indicating type II band alignment of the BQW. The emission wavelength at room temperature from (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW is longer (above 1.2 μm) than that from InGaAs/GaAs and GaAsSb/GaAs SQW structures (1.1 μm range), while the emission efficiency from the BQW structures is comparable to that of the SQW. Through optimizing growth conditions, we have obtained room temperature 1.31 μm wavelength emission from the (InyGa1-yAs/GaAs1-xSbx)/GaAs BQW. Our results have proved experimentally that the GaAs-based bilayer (InyGa1-yAs/GaAs1-xSbx)/GaAs quantum well is a useful structure for the fabrication of near-infrared wavelength optoelectronic devices.
A1., Bilayer quantum well, A1., Photoluminescence, A3., MBE, B1., GaAs1-x Sbx/, InyGa1-yAs
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牛智川, Z. C. Niu, S. Y. Zhang, H. Q. Ni, D. H. Wu, H. Zhao, H. L. Peng, Y. Q. Xu, S. Y. Li, Z. H. He, Z. W. Ren, Q. Han, X. H. Yang, Y. Du, R. H. Wu
APPLIED PHYSICS LETTERS 87, 231121(2005),-0001,():
-1年11月30日
Starting from the growth of high-quality 1.3 μm GaInNAs/GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55 μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5 μm range GaInNAsSb/GaNAs QWs are quite comparable to the 1.3 μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59 μm lasing of a GaInNAsSb/GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6 kA/cm2 with as-cleaved facet mirrors.
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牛智川, Shiyong Zhang, Zhichuan Niu, Haiqiao Ni, Donghai Wu, Zhenhong He, Zheng Sun, Qin Han, and Ronghan Wu
APPLIED PHYSICS LETTERS 87, 161911(2005),-0001,():
-1年11月30日
High structural and optical quality 1.3 μm GaInNAs/GaAs quantum well (QW) samples with higher (42.5%) indium content were successfully grown by molecular-beam epitaxy. The cross-sectional transmission electron microscopy measurements reveal that there are no structural defects in such high indium content QWs. The room-temperature photoluminescence peak intensity of the GaIn0.425NAs/GaAs (6 nm/20 nm) 3QW is higher than, and the full width at half maximum is comparable to, that of In0.425GaAs/GaAs 3QW, indicating improved optical quality caused by strain compensation effect of introducing N to the high indium content InGaAs epilayer.
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【期刊论文】1.55 μm GaInNAs resonant-cavity-enhanced photodetector grown on GaAs
牛智川, Q. Han, X. H. Yang, Z. C. Niu, H. Q. Ni, Y. Q. Xu, S. Y. Zhang, Y. Du, L. H. Peng, H. Zhao, C. Z. Tong, R. H. Wu, and Q. M. Wang
APPLIED PHYSICS LETTERS 87, 111105(2005),-0001,():
-1年11月30日
We report the design, growth, fabrication, and characterization of a GaAs-based resonant-cavity-enhanced (RCE) GaInNAs photodetector operating at 1.55 μm. The structure of the device was designed using a transfer-matrix method (TMM). By optimizing the molecular-beam epitaxy growth conditions, six GaInNAs quantum wells were used as the absorption layers. Twenty-five (25)- and 9-pair GaAs/ AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. At 1.55 μm, a quantum efficiency of 33% with a full width at half maximum of 10 nm was obtained. The dark current density was 3×10−7 A/cm2 at a bias of 0 V and 4.3×10−5 A/cm2 at a reverse bias of 5 V. The primary time response measurement shows that the device has a rise time of less than 800 ps.
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【期刊论文】Formation of GaAs/AlGaAs and InGaAs/GaAs nanorings by droplet molecular-beam epitaxy
牛智川, Z. Gong, Z. C. Niu, S. S. Huang, Z. D. Fang, B. Q. Sun, and J. B. Xia
APPLIED PHYSICS LETTERS 87, 093116(2005),-0001,():
-1年11月30日
GaAs/AlGaAs lattice-matched nanorings are formed on GaAs (100) substrates by droplet epitaxy. The crucial step in the formation of nanorings is annealing Ga droplets under As flux for proper time. The observed morphologic evolution of Ga droplets during annealing does not support the hypothesis that As atoms preferentially react with Ga around the periphery of the droplets, but somehow relates to a dewetting process similar to that of unstable films. Photoluminescene (PL) test results confirm the quantum-confinement effect of these GaAs nanorings. Using similar methods, we have fabricated InGaAs/GaAs lattice-mismatched rings.
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牛智川, Z. Gong, Z. C. Niu, Z. D. Fang, Z. H. Miao, and S. L. Feng
APPLIED PHYSICS LETTERS 86, 013104(2005),-0001,():
-1年11月30日
We have studied the effect of molecular beam epitaxy growth conditions on the surface morphology of strained InAs/GaAs(331)A films. Our results reveal that InAs nanowires aligned along the [110] direction are formed under As-rich conditions, which is explained by the effect of anisotropic buffer layer surface roughing. Under In-rich conditions, however, the surface morphology of the InAs layers is characterized by a feature of island-pit pairs. In this case, cooperative nucleation of islands and pits can lower the activation barrier for domain growth. These results suggest that the surface morphology of strained InAs layers is highly controllable.
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牛智川, Zheng Gong, ZhiChuan Niu, ZhiDan Fang
INSTIUTE OF PHYSICS PUBLISHING Nanotechnology 17(2006)1140-1145,-0001,():
-1年11月30日
Morphology evolution of high-index GaAs(331)A surfaces during molecular beam epitaxy (MBE) growth has been investigated in order to achieve regularly distributed step-array templates and fabricate spatially ordered low-dimensional nano-structures. Atomic force microscope (AFM) measurements have shown that the step height and terrace width of GaAs layers increase monotonically with increasing substrate temperature. By using the step arrays formed on GaAs(331)A surfaces as the templates, we have fabricated highly ordered InGaAs nanowires. The improved homogeneity and the increased density of the InGaAs nanowires are attributed to the modulated strain field caused by vertical multi-stacking, as well as the effect of corrugated surface of the template. Photoluminescence (PL) tests confirmed remarkable polarization anisotropy.
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