马瑾
个性化签名
- 姓名:马瑾
- 目前身份:
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师
- 职称:-
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学科领域:
微电子学
- 研究兴趣:
理学博士, 1960年9月26日出生,1982年山东大学物理系理论物理专业毕业,1988年山大物理系固体物理专业硕士毕业,2001年获得博士学位。1995年被山东大学聘为副教授,后成为山大青年学术带头人,教育部骨干教师。1999年9月被山东大学破格晋升为教授,2004年被聘为山东大学关键岗教授,微电子学科带头人,微电子系主任,享受政府特殊津贴。连续承担国家“七、五”、“八、五”和“九、五”重点科技攻关项目;主持国家自然科学基金(四项)、教育部科学技术研究重点项目、山东省自然科学基金和教育部高等学校骨干教师资助计划等项目。取得国家级和省部级科研成果10项,获得教育部提名国家自然科学一等奖、山东省自然科学三等奖和山东省科技进步三等奖各一项,发表论文100多篇。
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主页访问
2027
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关注数
0
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成果阅读
370
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成果数
10
马瑾, Jin Ma, Shu-Ying Li, Jun-qing Zhao, Hong-Lei Ma
Thin Solid Films 307 (1997) 200-202,-0001,():
-1年11月30日
Highly transparent conducting indium tin oxide(ITO) films have been prepared on polyester thin film substrate by reactively evaporating metal In-Sn alloy in a system with an oxygen partial pressure of (3-30)×10-5 Torr and substrate temperatures between 80 and 240℃. The structure and opto-electrical properties of the films depending on the deposition conditions have been investigated. High quality films with a average transparency of 83% and the resistivity of 7×10-4 v cm have been obtained by controlling the deposition prameters.
Indium tin oxide, Polyester substrate, Reactive evaporation
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【期刊论文】Electrical and optical properties of ZnO:Al films prepared by an evaporation method
马瑾, Jin Ma, Feng Ji, Hong-lei Ma, Shu-ying Li
Thin Solid Films 279 (1996) 213-215,-0001,():
-1年11月30日
This paper describes the preparation of aluminium-doped zinc oxide films by thermal evaporation of zinc acetate(Zn(CH3COO)2
Conductivity, X-ray diffraction, Zinc oxide
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马瑾, Ma Jin, Ji Feng, Zhang De-heng, Ma Hong-lei, Li Shu-ying
Thin Solid Films 357 (1999) 98-101,-0001,():
-1年11月30日
Undoped and Aluminium-doped Zinc oxide films have been prepared by thermal evaporation of zinc acetate (Zn(CH3COO)2
Zinc oxide, Optical properties, Electrical properties, Structural properties
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317下载
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马瑾, Jin Ma, Dehang Zhang, Junqing Zhao, Chuenyu Tan, Tianlin Yang, Honglei Ma
Applied Surface Science 151 (1999) 239-243,-0001,():
-1年11月30日
Sn-doped indium oxide(ITO).films have been prepared on polyimide(PI).thin film substrate at low substrate temperature (80–240℃).by reactive evaporation. The samples were deposited as polycrystalline films with a cubic bixbyite structure and a preferred orientation with the(111).plan parallel to the substrate. The structural, optical and electrical properties of the obtained films depending on deposition temperature have been investigated. High quality films with resistivity as low as 7×10-4 V cm and transmittance over 80% have been obtained by suitably controlling the deposition parameters.
ITO films, Organic substrate, Reactive evaporation
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马瑾, H.L.Ma, D.H.Zhang, P.Ma, S.Z.Win, S.Y.Li
Thin Solid Films 263 (1995) 105-110,-0001,():
-1年11月30日
Highly transparent conducting indium tin oxide(ITO)films have been prepared on glass substrates by reactively evaporating In-Sn alloy in a system with an oxygen partial pressure of (1-2)×10-4 Torr and a substrate temperature between 100 and 320℃. Mechanically stable polycrystalline conducting ITO films having a preferred orientation with the (111) planes parallel to the substrates were deposited with resistivities in the range from 1.12×10-4 to 3.07×10-4 cm, with carrier densities between 7×1020 and 1.27×1021 cm-3 and Hall mobilities between 27 and 40 cm2 V-1 S-1. The average transmittance reached 95% for a film 175 nm thick in the wavelength range of the visible spectrum. The resistivities and transmittances of the obtained films depended on the oxygen partial pressures and substrate temperatures during film fabrication.
Conductivity, Indium oxide, Optical properties, Tin
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马瑾, T.L. Yang, D.H. Zhang, J. Ma, H.L. Ma, Y. Chen
Thin Solid Films 326 (1998) 60-62,-0001,():
-1年11月30日
Transparent conducting ZnO:Al films with good adhesion and low resistivity have been prepared on organic substrates by r.f. magnetronsputtering. Polycrystalline ZnO:Al films having a preferred orientation were obtained with resistivity 1.84
ZnO:Al films, Organic substrates, Magnetron sputtering
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马瑾, D.H.Zhang, D.E.Brodie
Thin Solid Films 257 (1995) 58-62,-0001,():
-1年11月30日
A strong accumulation layer can be produced on the surface of polycrystalline ZnO films when the samples are exposed to ions from an ineret gas discharge in Ar or Kr. A combination of surface conductance and surface potential measurements show that an accumulation layer is induced by the adsorption of charges from the inert gas plasma which neutralizes and removes chemisorbed oxygen atoms, and this can increase the conductance by more than 6 orders of magnitude, for 500 nm thick films. Electrical neutrality in the ZnO provides the electrons for the accumulation layer, either from the ohmic contacts or the plasma. This accumulation layer can be further enhanced by illumination with UV light.
Adsorption, Conductivity, Photovoltage, Zinc oxide
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【期刊论文】Photoresponse of polycrystalline ZnO films deposited by r.f. bias sputtering
马瑾, D.H.Zhang, D.E.Brodie
Thin Solid Films 261 (1995) 334-339,-0001,():
-1年11月30日
The photoresponse of polycrystalline ZnO films generally contains both a true photoconductivity and a contribution from surface structural changes which can alter the surface conducatance via the chemisorption and photodesorption of an active ambient-gas component. The surface structural changes can increase the conductance by up to seven orders of magnitude for a 500nm thick sample when illuminated with an intensity of 4
Photoconductivity, Photodesorption, Sputtering, Zinc oxide
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【期刊论文】Burstein shift usd UV photoresponse in IBAD-deposited transparent conducting ZnO films
马瑾, D.H.Zhang, R.W.Gao, H.L.Ma
Thin Solid Films 295 (1997) 83-86,-0001,():
-1年11月30日
A Burstein-Moss shift has been observed in highly transparent conducting zinc oxide films prepared by ion-bean-assisted reactive deposition. The optical gaps ranged from 3.27 to 4.1 eV increase with an increase in film conductivities and carrier concentrations. Annealing over 773K reduces conductivities by several orders of magnitude and subsequently narrows the optical gaps from 3.41 to 3.24 eV. When the films are irradiated with a UV light, they exhibit some photoresponse. The observed UV photoresponse can bi interpreted using oxygen photodesorption and chemisorption at the surface
Zinc oxide, Band structure, Optical properties, Photoresponse
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马瑾, D.H. Zhang, T.L. Yang, J. Ma, Q.P. Wang, R.W. Gao, H.L. Ma
Applied Surface Science 158 (2000) 43-48,-0001,():
-1年11月30日
Highly transparent conducting Al-doped ZnO films with good adherence and low resistivity have been prepared on polymer substrates by r. f. magnetron sputtering. Mechanically stable polycrystalline conducting ZnO: Al films having a preferred orientation with the (002).planes parallel to the substrates were deposited on polyisocyanate(PI).substrate with resistivities in the range of 4.1×10-3 to 5.110-4 π cm, with carrier densities more than 2.6×1020 cm-3 and Hall mobilities between 5.78 and 13.11 cm2 V-1 s-1. The average transmittance exceeded 80% for a 440 nm thick film deposited on polypropylene adipate (PPA).substrate in the visible spectrum. The quality of obtained films depended on substrate temperatures, sputtering power, Ar pressures and compositions of used targets during film fabrication.
ZnO:Al, Polymer substrate, Sputtering, Transparent conducting films
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