许宁生
主要从事光电材料与技术研究。
个性化签名
- 姓名:许宁生
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- 担任导师情况:
- 学位:
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学术头衔:
博士生导师, “973”、“863”首席科学家, 国家杰出青年科学基金获得者
- 职称:-
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学科领域:
凝聚态物理学
- 研究兴趣:主要从事光电材料与技术研究。
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4357
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626
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成果数
10
许宁生, N. S. Xu, a) J. C. She, Jian Chen, S. Z. Deng, and Jun Chen
,-0001,():
-1年11月30日
Details are given of an experimental study of microfabrication and characterization of a diode electron source using amorphous diamond (a-D) thin films. (100) n-type etched Si wafers with microscale-rough surface were used as cathode substrates. Filtered cathodic vacuum arc deposition technique was employed to coat a thin layer of a-D film on the Si substrate. Using the conventional photolithography, an array of well-defined diode structures with 20 mm gate diameter were formed. In addition, x-ray energy dispersive spectroscopy and atomic force microscopy were used to characterize the diode structure. Furthermore, the total emission current versus applied gate voltage of the diode electron source was measured. The physics of the emission process from the a-D diode was discussed.
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许宁生, N. S. Xu, a) Jun Chen, and S. Z. Deng
,-0001,():
-1年11月30日
Nonlinearity is observed in Fowler–Nordheim (FN) plots of field emission from nondoped and nitrogen-doped amorphous diamond films. Based on a unified electron emission equation a detailed analysis is carried out. The results from numerical calculation of the unified equation are consistent with the experimental data. It is shown that the nonlinearity in the FN plot originates from a transition from thermionic emission to field emission as the applied field increases. The electrical field ranges are derived in which the field emission and thermionic emission pproximation applies.
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许宁生, Jian Chen, Jun Chen, Shaozhi Deng, Juncong She, Ningsheng Xu*
Ultramicroscopy 79(1999)89-93,-0001,():
-1年11月30日
Details are given of an experimental study of the e!ects of surface treatment of silicon substrate on the "eld emission process of #at amorphous diamond (a-D) "lm "eld emitters. Using a "ltered cathodic vacuum arc plasma deposition system (FCVAPD), the amorphous diamond (a-D) "lm was deposited on both non-treated and etched silicon wafers (n-type and p-type). The "eld electron emission characteristic was measured before and after depositing a-D "lm. The a-D "lm on etched silicon wafer shows distinct increase in emission current compared with that on no n-treated silicon wafer. The phenomenon is attributed to two important reasons: the low or even negative surface electron a$nity of a-D "lm and the local "eld enhancement at the Si-diamond interface.
Field emission, a-D film, Etched silicon
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【期刊论文】Field emission from diamond and related "lms
许宁生, N.S. Xu*
Ultramicroscopy 79(1999)59-72,-0001,():
-1年11月30日
Field electron emission from diamond and related "lms has been a popular topic of both experimental and theoretical research since the beginning of 1990s. Because of their low surface electron a$nity, chemical inertness and high thermal conductivity, this type of "lms is considered a strong candidate for cold-cathode materials. The "eld-emission properties of various types of diamond "lm are reviewed, and the milestone developments are identi"ed. Current theoretical models are compared. Potential applications of the diamond based cold-cathode emitters are predicted.
Field electron emission, Diamond ", lm, Cold cathode
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许宁生, J. Chen, S. Z. Deng, and N. S. Xua), K. H. Wu and E. G. Wang
,-0001,():
-1年11月30日
A field-induced electron emission phenomenon has been observed from nitrogen-doped diamond films deposited on molybdenum substrates by microwave plasma enhanced chemical vapor deposition using N2 /CH4 as feedstock. Their field-induced electron emission characteristics, i.e., current-voltage characteristics and distribution of emission sites, were studied using the transparent anode imaging technique. A repeatable abrupt change of "on" and "off" states of emission was observed at two corresponding specific fields during circling of both increasing and decreasing applied gap fields. A plausible explanation is given to this type of field-induced electron emission phenomenon, in which a two-layer structure consisting of amorphous carbon and diamond is proposed.
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【期刊论文】An initiation mechanism of thermal instability of a metal-diamond-vacuum field emission regime
许宁生, N. S. Xu, a) Z. X. Yu, S. Z. Deng, J. Chen, and S. S. Wu
,-0001,():
-1年11月30日
An analysis is carried out of the physical origin of thermal instability that can trigger a catastrophic vacuum breakdown event in vacuum microelectronic devices based on flat diamond emitters. The temperature rise in a diamond film will enhance internal field emission across metal-diamond interface. This effect can lead to a regenerative process that can initiate a breakdown event at temperature lower than the melting point of an emitter. A set of equations has been developed. These theoretical findings are successfully applied to explain the instability of field emission from the nondoped diamond films.
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【期刊论文】Graphitization of nanodiamond powder annealed in argon ambient
许宁生, Jian Chen, S. Z. Deng, Jun Chen, Z. X. Yu, and N. S. Xua)
,-0001,():
-1年11月30日
Nanodiamond powder was annealed at each of the following temperatures: 300, 600, 800, 1000, and 1150℃, for an hour in flowing argon ambient. The variations of x-ray diffraction patterns and Raman spectra of the powder with different annealing temperatures were studied. While being annealed at temperatures higher than 800℃, the powder can undergo a phase-transition process from cubic diamond to graphite. In addition, the size of nanodiamond crystallites decreased from ~50 to ~25 Å. The physical mechanism responsible for the variation in Raman spectra is discussed using a phonon-confinement model.
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【期刊论文】Enhancing electron emission from silicon tip arrays by using thin amorphous diamond coating
许宁生, N. S. Xua) and J. C. She, S. E. Huq, J. Chen and S. Z. Deng
,-0001,():
-1年11月30日
A thin (;2 nm thick! amorphous diamond coating was prepared on single crystal silicon tip arrays by using a filtered vacuum arc plasma deposition technique. The coating has a microscopically uniform morphology. As compared to uncoated tips, the electron emission of the coated tip arrays is enhanced, showing an increase in the total current, lower turn-on field and a lower-slope Fowler-Nordheim plot. We propose that field-emitted electrons could tunnel through such a thin coating with few scattering events. It is shown that the low potential barrier at the interface is the major cause of the enhancing effects instead of the negative surface electron affinity of the coating.
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许宁生, N S Xu†, Y Tzeng‡ and R V Latham†
J. Phys. D: Appl. Phys. 27(1994)1988-1991. Printed in the UK,-0001,():
-1年11月30日
Details are given of an experimental study of the characteristics of field-induced electron emission from 15 mm diameter CVD diamond films deposited on an Mo substrate. Three dedicated techniques have been used to characterize the electron emission process: (i) the'transparent anode imaging' technique for recording the spatial distributions of emission sites and the total current-voltage (I-V) charactedstic, (ii) the'anode probe hole' technique for measudng the I-V characteristic of individual sites, and (iii)'field emission electron spectroscopy' for studying the energy distribution of emitted electrons. Finally, the physical implications of the findings from the electron energy spectroscopy measurement are discussed.
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许宁生, N S Xu†, Y Tzeng‡ and R V Latham†
J. Phys. D: Appl. Phys. 26(1993)1776-1780. Printed in the UK,-0001,():
-1年11月30日
Details are given of an experimental study of field emission characteristics of diamond-coated Mo electrodes: in particular, a transparent anode imaging technique was used to monitor the spatial distribution of the individual emission centres. This study has revealed the important fact that substantial emission can be obtained at fields as low as 5 MV m-1. In order to investigate the physical nature of the emission process, a comparative study has been made of emission obtained from a diamond-coated electrode and a bulk carbon graphite electrode. Significantly, it was found that both the graphite-rich diamond film and the diamond-rich graphite electrode shared a similar highemissivity characteristic, with a high surface density of emission sites. It has also been noted that cvo diamond films have two important properties that are favourable to low-field cold electron emission, namely their negative electron affinity and the presence of graphite inclusions.
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