边继明
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- 姓名:边继明
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学科领域:
材料科学
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边继明,男,1973年生,现任大连理工大学物理与光电工程学院副教授,博士生导师。1998年获大连轻工业学院无机非金属材料专业硕士学位,2005年获中国科学院上海硅酸盐研究所材料科学与工程专业博士学位。2005年6月通过大连理工大学特殊评审为副教授,2008年6月通过大连理工大学特殊评审为博士生导师。博士期间(2002-2005)师从薄膜材料专家、中国科学院“百人计划”获得者李效民研究员,一直从事新一代宽带隙半导体-氧化锌光电材料与器件的研究工作。参加过中科院百人计划基金、国家自然科学基金、上海市科委光科技行动计划等多项科研课题,已在国内外学术刊物和会议上发表论文近50篇。在ZnO材料与光电器件方面获得了国际水平的原创性研究成果,多篇论文在国际权威刊物美国应用物理快报(Applied Physics Letters)上发表。另外,申请者2008至2009年曾在新希兰奥克兰大学国际纳米材料与器件专家WeiGao教授(新西兰皇家科学院院士)研究组访学一年,专门从事一维ZnO 纳米线/棒的生长和发光器件研究。
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边继明, J. M. Bian, X. M. Li, X. D. Gao, W. D. Yu, L. D. Chen
APPLIED PHYSICS LETTERS VOLUME 84, NUMBER 4, 26 JANUARY 2004,-0001,():
-1年11月30日
The N–In codoped p-type ZnO films have been prepared by ultrasonic spray pyrolysis. X-ray photoelectron spectroscopy analysis confirmed the presence of nitrogen and indium in the codoped films, and the incorporation of indium causes the change in the chemical state of nitrogen, which promotes the formation of p-type conduction. Low resistivity of 1.7×10-2Ωcm, high carrier concentration of 2.44×1018cm-3 and Hall mobility of 155 cm2V-1s-1 at room temperature for the codoped films were obtained. A conversion from p-type conduction to n type in a range of temperature has been identified by the measurement of Seebeck and Hall effect.
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边继明, J. M. Bian, X. M. Li, C. Y. Zhang, L. D. Chen, Q. Yao
APPLIED PHYSICS LETTERS VOLUME 84, NUMBER 19 10 MAY 2004,-0001,():
-1年11月30日
The two-layer-structured ZnO p-n homojunctions were prepared on single-crystal Si (100) substrate by depositing undoped n-type ZnO film on N–In codoped p-type ZnO film using ultrasonic spray pyrolysis. The crystal structure and morphology of the obtained ZnO homojunctions were examined by x-ray diffraction, scanning electron microscopy, and atomic force microscopy. The two-layer structure was confirmed by secondary ion mass spectroscopy depth profile analysis. The current–voltage (I –V) characteristics derived from the undoped ZnO/N–In codoped ZnO two-layer structure clearly show the rectifying characteristics of typical p-n junctions.
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【期刊论文】p-type ZnO films by monodoping of nitrogen and ZnO-based p–n homojunctions
边继明, J. M. Bian, X. M. Li, C. Y. Zhang, W. D. Yu, X. D. Gao
APPLIED PHYSICS LETTERS. VOLUME 85, NUMBER 18, 1 NOVEMBER 2004,-0001,():
-1年11月30日
Nitrogen-doped p-type ZnO (ZnO: N) films have been achieved by ultrasonic spray pyrolysis at atmosphere. The high structural quality of the obtained films was confirmed by x-ray diffraction, scanning electron microscopy, and photoluminescence spectra. Hall-effect and Seebeck-effect measurements indicate that the obtained p-type ZnO film shows a low resistivity of 3.02×10−2Ωcm, high carrier concentration of 8.59×1018cm−3, high mobility of 24.1 cm2/V s, and high Seebeck coefficient of 408.2 μV/K at room temperature. Furthermore, the two-layer structured ZnO p–n homojunctions were prepared by depositing n-type ZnO layer on p-type ZnO: N layer. The current–voltage curve derived from the two-layer structure clearly shows the typical rectifying characteristic of p–n junctions.
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边继明, Jiming Bian, Xiaomin Li, Lidong Chen, Qin Yao
Chemical Physics Letters 393 (2004) 256–259,-0001,():
-1年11月30日
Undoped and N–In codoped ZnO films were deposited on Si(100) by ultrasonic spray pyrolysis. The structural, electrical and optical properties of the ZnO based films were investigated. Results indicate that the low-resistivity p-type ZnO film with the resistivity of 5.04×10−3 Ωcm, high mobility of 33.5 cm2/Vs, carrier concentration of 3.69×1019cm−3, and Seebeck coefficient of 825μV/K was obtained by the codoping of N and In. In the photoluminescence measurement, a strong near-band-edge emission was observed for both undoped and codoped films, while the deep-level emission was almost undetectable.
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边继明, Jiming Bian, Weifeng Liu, Hongwei Liang, Lizhong Hu, Jingchang Sun, Yingmin Luo, Guotong Du
Chemical Physics Letters 430 (2006) 183–187,-0001,():
-1年11月30日
The heterojunction light-emitting diode with n-Zn0.8Mg0.2O/ZnO/p-Zn0.8Mg0.2O structure was grown on single-crystal GaAs(100) substrate by a simple process of ultrasonic spray pyrolysis. The p-type Zn0.8Mg0.2O layer was obtained by N–In codoping. A distinct visible electroluminescence with a dominant emission peak centered at ~450 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origin of electroluminescence emission was supposed to be attributed to a radiative recombination through deep-level defects in the ZnO active layer. The result reported here provides convincing evidence that ZnO based light-emitting devices can be realized at extremely low cost.
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边继明, Jiming Bian, Yingmin Luo, Jingchang Sun, Hongwei Liang, Weifeng Liu, Lizhong Hu
J Mater Sci (2007) 42: 8461–8464,-0001,():
-1年11月30日
Zn1–xMgxO films were deposited on single crystal Si (100) substrates using ultrasonic spray pyrolysis under ambient atmosphere. A strong ultraviolet near-bandedge (NBE) emission was observed in the room temperature photoluminescence (PL) measurement for all the as-grown Zn1–xMgxO films, while the deep-level emission was almost undetectable, suggesting that the obtained Zn1–xMgxO-based films are well close to stoichiometry and of optically high quality. A distinct blue-shift of NBE emission peak from 386 nm to 358 nm was observed as the Mg concentration increases from 0% to 25%. The photoluminescence spectra as a function of temperature were also investigated to examine the emission mechanism of Zn1–xMgxO films.
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边继明, Jiming Bian, Weifeng Liu, Jingchang Sun, Hongwei Liang
Journal of Materials Processing Technology 184 (2007) 451–454,-0001,():
-1年11月30日
To realize practical application of short-wavelength optoelectronic devices (such as light emitting diodes, LEDs, and LDs) based on ZnO materials, electroluminescence (EL) from ZnO based junction device is pivotal. In this article, ZnO based devices with different structures were grown on single-crystal GaAs(100) substrate by ultrasonic spray pyrolysis. The ZnO homojunction was comprised of N–In codoped p-type ZnO and unintentionally doped n-type ZnO film. Moreover, heterojunction device with n-ZnMgO/ZnO/p-ZnMgO structure was also grown on single-crystal GaAs(100) substrate by the same method. Ohmic contact layer on n-type ZnO layer and GaAs substrate were formed by Zn/Au and Au/Ge/Ni electrodes, respectively. Distinct light emission was observed under forward current injection at room temperature. The origin of electroluminescence emission was supposed to be attributed to a radiative recombination through deep-level defects in the structure.
Electroluminescence, Ultrasonic spray pyrolysis, Zinc oxide films, p–n Junction, Light emitting devices
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【期刊论文】Preparation of high quality MgO thin films by ultrasonic spray pyrolysis
边继明, Ji Ming Bian, Xiao Min Li, Tong Lai Chen, Xiang Dong Gao, Wei Dong Yu
Applied Surface Science 228 (2004) 297–301,-0001,():
-1年11月30日
High quality MgO thin films have been successfully prepared by ultrasonic spray pyrolysis technique on Si(100) substrate. The microstructure and electrical properties of the deposited MgO thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and semiconductor resistivity meter (SRM). Results indicated that the MgO thin films exhibit island growth characteristic at relatively lower deposition temperature and layer growth characteristic at higher temperature. Highly (200) oriented MgO films with homogeneous and dense surface and extremely high resistivity has been achieved under the optimized conditions of Ts = 680 8C, which should be suitable as a buffer layer for the subsequent growth of oriented ferroelectric materials.
MgO thin film, Ultrasonic spray pyrolysis, Growth mechanism, Layer growth
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【期刊论文】Electroluminescence from a ZnO homojunction device grown by pulsed laser deposition
边继明, W.F. Liu, J.M. Bian, L.Z. Hu, H.W. Liang, H.Q. Zang, J.C. Sun, Z.W. Zhao, A.M. Liu, G.T. Du
Solid State Communications 142 (2007) 655–658,-0001,():
-1年11月30日
A ZnO homojunction light emitting device was grown on n+ GaAs substrate by pulsed laser deposition. As-doped ZnO film by diffusion of As from the substrate was used for the p-type side and Al-doped ZnO film for the n-type side of the device. A distinct electroluminescence emission consisting of a dominant emission peak at ~2.5 eV and a weak shoulder centered at ~3.0 eV was observed at room temperature. The I –V characteristic of the ZnO homojunction showed a good rectifying behavior with a turn-on voltage of ~4.5 V and a reverse breakdown voltage of ~9 V.
A., ZnO homojunction, B., Light emitting device, D., As doping, D., Pulsed laser deposition
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边继明, G. T. Du, W. F. Liu, J. M. Bian, L. Z. Hu, H. W. Liang, X. S. Wang, A. M. Liu, T. P. Yang
APPLIED PHYSICS LETTERS 89, 052113 (2006),-0001,():
-1年11月30日
ZnO homojunction light-emitting diode was grown on single-crystal GaAs (100) substrate by ultrasonic spray pyrolysis. This diode was comprised of N–In codoped p-type ZnO and unintentionally doped n-type ZnO film. Ohmic contact on n-type ZnO layer and GaAs substrate was formed by Zn/Au and Au/Ge/Ni alloyed metal electrodes, respectively. An electroluminescence emission associated with defects was observed from the ZnO homojunction under forward current injection at room temperature. The I-V characteristics of the homojunction showed a threshold voltage of ~4 V under forward bias.
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