徐静平
微电子器件、物理、工艺以及集成技术方面
个性化签名
- 姓名:徐静平
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学术头衔:
博士生导师
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学科领域:
微电子学
- 研究兴趣:微电子器件、物理、工艺以及集成技术方面
一九八二年一月毕业于华中理工大学固体电子学系半导体物理与器件专业。八四年获该专业工学硕士学位,并留校任教。一九九三年获电子材料与元件专业工学博士学位,九五年十二月至九九年六月在香港大学电机电子工程系做博士后研究工作。近几年来(2000-2004),作为高级访问学者每年赴香港大学从事3-4个月的合作研究。九四年晋升为副教授,二000年二月晋升为教授,二00二年六月被评聘为博士生导师。自一九八四年以来,一直从事微电子器件、物理、工艺以及集成技术方面的教学与研究工作。目前,作为负责人主持国家自然科学基金项目两项,完成教育部骨干教师基金一项、湖北省自然科学基金两项以及国际合作项目三项。自九五年以来,在VLSI先进的薄栅介质制备技术、Si及SiC MOS器件界面物理和界面特性、CMOS设计及制备工艺、MOS器件物理、可靠性及电特性模拟以及传感器件等方面取得了一系列创造性的研究成果,在国际上率先提出了在SiC晶片表面采用N2O或NO直接热生长氧化物以及采用NH3进行表面钝化处理的先进技术,获得了SiC/SiO2界面质量和可靠性的极大改进,有关成果在IEEE EDL上发表,多次被同行专家引用;国际上首次采用NO低温快速氧化方法制备MISiC传感器超薄(1-2 nm)绝缘层的新技术,获得了高灵敏度高可靠性的MISiC Schottky二极管气体传感器,有关成果在IEEE EDL上发表。迄今为此,在国际国内重要期刊杂志及国际重要学术会议上发表学术论文80余篇,其中国际期刊近40篇,被SCI收录30余篇,EI收录20余篇。
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3507
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0
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成果阅读
496
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成果数
10
【期刊论文】GREATLY SUPPRESSED STRESS-INDUCED SHIFT OF GIDL IN N2O-BASED n-MOSFET's
徐静平, J. P. XU, P. T. LAI, L. HUANG, H. B. LO and Y. C. CHENG
Solid-State Electronics Vol. 42, No.9, pp. 1665-1669, 1998,-0001,():
-1年11月30日
Considerably suppressed gate-induced drain leakage (GIDL) shifts of N2O-based n-MOS-FET's after hot-carrier stress with different gate voltages are observed. The mechanisms involved are studied by dividing gate-oxide traps into sub-interface and bulk-oxide traps, and by means of computer simulations on electric-field distribution and carrier filling of these traps. It is demonstrated that sub-interface and bulk-oxide hole detrapping during stressing are mainly responsible for the respective GIDL shifts under two diff erent stress conditions of VG=0.5VD and VG=VD, with the effect of the former larger than the latter. In view of this, it is proposed that MOSFET's with N2O-nitrided or es-pecially N2O-annealed NH3-nitrided gate oxide have not only fewer pre-existing sub-interface and bulk-oxide hole traps, but also greatly suppressed generation of hole and neutral electron traps due to the formation of a nitrogen-rich layer near the SiO2/Si interface through N2O treatment.
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【期刊论文】Gate dielectrics prepared by double nitridation in NOand N2O
徐静平, J.P. Xu, P.T. Lai, Y.C. Cheng
Appl. Phys. A 70, 101-105 (2000)/Digital Object Identifier (DOI),-0001,():
-1年11月30日
Oxynitrides prepared by double nitridation in nitric oxide (NO) and nitrous oxide (N2O) are compared to the one with a single NO nitridation. Based on various hot-carrier stresses, harder oxide/Si interface, less charge trapping and generation of electron/hole traps in oxide, and larger chargeto-breakdown are observed for the doubly-nitrided gate dielectrics than the singly-nitrided one. By analyzing the nitrogen profiles in these oxynitrides, it is revealed that the involved mechanisms lie in the smaller distance of peak nitrogen concentration from the oxide/Si interface and the higher nitrogen content near the oxide=Si interface in the doublynitrided oxynitrides.
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【期刊论文】Energy levels of interface states generated in n-MOSFETs by hot-carrier stresses
徐静平, Jing-Ping Xu a, *, P.T. Lai b, Y.C. Cheng b
Solid-State Electronics 44(2000)527-534,-0001,():
-1年11月30日
The energy levels of interface states generated in n-MOSFETs during hot-carrier stressings under maximum substrate-current condition (VG~VD/2) are studied by measuring their GIDL current, which is believed to result from trap-assisted tunneling. It is found that dierent VG results in interface-state distribution with different energy-level edges in the forbidden gap. This phenomenon gives a new insight on the mechanism of interface-state generation: the energy release when holes are neutralized by electrons during stressing, depends on the energy the carriers obtain from the stress field which is related to VG and VD. Smaller released energy prefers to break those bonds with lower binding energy (e.g. strained Si-O bonds) and thus creates shallow interface states and vice versa. Hence, the effects of these shallow interface states on device reliabilities are a major concern because they would be highly created by the low operating voltage of MOSFETs. In addition, it is suggested that interface traps which are most effective in assisted tunneling are those closest to the mid-gap from the analyses on the barrier height of tunneling.
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【期刊论文】Electrical properties of different NO-annealed oxynitrides
徐静平, J.P. Xu a, P.T. Lai b, *, Y.C. Cheng b
Journal of Non-Crystalline Solids 254(1999)94-98,-0001,():
-1年11月30日
Performances of gate dielectrics prepared by double-nitridation in NO and N2O are investigated. Stronger oxide/Si interface bonding, less charge trapping and larger charge-to-breakdown are observed for such gate dielectrics than singly NO-nitrided gate dielectric. The physical mechanisms behind the findings are attributed to larger nitrogen peak concentration located almost at the oxide/Si interface and total nitrogen content near the oxide/Si interface of these gate dielectrics.
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【期刊论文】Effects of Wet N2O Oxidation on Interface Properties of 6H-SiC MOS Capacitors
徐静平, P. T. Lai, J. P. Xu, and C. L. Chan
IEEE ELECTRON DEVICE LETTERS, VOL. 23, NO.7, JULY 2002,-0001,():
-1年11月30日
Oxynitrides were grown on n-and p-type 6H-SiC wet N2O oxidation (bubbling N2O gas through deionized water at 95 C) or dry N2O oxidation followed by wet N2O oxidation. Their oxide/SiC interfaces were investigated for fresh and stressed devices. It was found that both processes improve p-SiC/oxide deteriorate n-SiC/oxide interface properties when compared to dry N2O oxidation alone. The involved mechanism could be enhanced removal of unwanted carbon compounds near the interface due to the wet ambient, and hence a reduction of donor-like interface states for the p-type devices. As for the n-type devices, incorporation of hydrogen-related species near the interface under wet ambient increases acceptor-like interface states. In summary, the wet N2O oxidation can be used for providing comparable reliability for n-and p-SiC MOS devices, and especially obtaining high-quality oxide-SiC interface in p-type MOS devices.
Interface-state density,, MOS capacitors,, silicon carbide,, wet N2O oxidation.,
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【期刊论文】Dynamic-Stress-Induced Enhanced Degradation of 1/f Noise in n-MOSFET's
徐静平, J. P. Xu, P. T. Lai, and Y. C. Cheng, Member, IEEE
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 47, NO.1, JANUARY 2000,-0001,():
-1年11月30日
1/f noise, AC hot-carrier stress, dynamic stress, MOSFET's, nitridation.
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【期刊论文】Determination of optimal insulator thickness for MISiC hydrogen sensors
徐静平, J.P. Xu a, P.T. Lai b, *, B. Han a, W.M. Tang b
Solid-State Electronics 48(2004)1673-1677,-0001,():
-1年11月30日
Response mechanisms of hydrogen sensor based on a metal-insulator-SiC (MISiC) Schottky-barrier diode are analyzed. A physical model is established for the hydrogen sensor by combining thermionic emission with quantummechanical tunneling of charge carriers, and considering hydrogen-induced barrier-height modulation. Simulated results are in good agreement with experimental data. Relation between device performance and insulator thickness is investigated using the proposed model, and the optimal range of insulator thickness can be determined by taking into account the tradeoff between device sensitivity, reliability and resolution for high-temperature applications.
Metal-insulator-SiC (, MISiC), , Schottky-barrier diode (, SBD), , Hydrogen sensor
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【期刊论文】A COMPARISON BETWEEN THE INTERFACE PROPERTIES OF N2O-NITRIDED AND N2O-GROWN OXIDES
徐静平, J. P. XU, P. T. LAI and Y. C. CHENG
Solid-State Electronics Vol. 42, No.11, pp. 2053-2056, 1998,-0001,():
-1年11月30日
The interface and bulk qualities of N2O-based oxides are investigated by means of backsur-face Ar+ bombardment and hot-carrier stressings. It is deduced that there exists a large mechanical stress near the oxide/Si interface for N2O-grown oxide which might result from its initial accelerated growth phase, while the residual stress is negligible for N2O-nitrided oxide. Therefore, in view of another stress induced by the bombardment, the interfacial properties can be improved for N2O-grown oxide through stress compensation, but deteriorate for N2O-nitrided oxide due to increased mechanical stress, indicating fresh N2O-nitrided oxide itself has excellent interfacial and bulk qualities for high-per-formance devices. Moreover, for N2O-grown oxide, the improvement exhibits a turnaround behavior for long bombardment times due to stress over-compensation
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徐静平, J. P. Xu, P. T. Lai, a) and Y. C. Cheng
JOURNAL OF APPLIED PHYSICS VOLUME86, NUMBER9 1NOVEMBER 1999,-0001,():
-1年11月30日
Degradation mechanisms contributing to increased 1/f noise of n-channel metaloxide-semiconductor field-effect transistors (n-MOSFETs) after different hot-carrier stresses are investigated. It is demonstrated that for any hot-carrier stress, the stress-induced enhancement of 1/f noise is mainly attributed to increased carrier-number fluctuation arising from created oxide traps, while enhanced surface-mobility fluctuation associated with electron trapping at preexisting and generated fast interface states and near-interface oxide traps is also responsible under maximum substrate-and gate-current stresses. Besides thermal-oxide n-MOSFETs, nitrided-oxide devices are also used to further support the above analysis
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【期刊论文】1/f Noise behaviors of NO-nitrided n-MOSFETs
徐静平, J.-P. Xu a, *, P.T. Lai b, Y.C. Cheng b
Solid-State Electronics 45(2001)431-433,-0001,():
-1年11月30日
1/f Noise behaviors of nitric oxide (NO)-nitrided n-MOSFETs are investigated. Greatly decreased 1/f noise at low frequencies and enhanced stability of noise properties under hot-carrier stress are achieved by annealing NO-nitrided gate oxide in an N2O ambient. The physical mechanisms involved lie in the fact that N2O annealing partly removes the oxide traps situated farther away from the oxide/Si interface and simultaneously increases interfacial nitrogen incor-poration.
MOS devices, MOSFETs, 1/, f noise, Nitridation, Hot-carrier stress
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