张道礼
主要集中于开发II-VI族和III-V族化合物半导体材料合成以及氧化物薄膜材料制备的新路线。
个性化签名
- 姓名:张道礼
- 目前身份:
- 担任导师情况:
- 学位:
-
学术头衔:
博士生导师
- 职称:-
-
学科领域:
微电子学
- 研究兴趣:主要集中于开发II-VI族和III-V族化合物半导体材料合成以及氧化物薄膜材料制备的新路线。
张道礼 教授、博士生导师
研究方向:
主要集中于开发II-VI族和III-V族化合物半导体材料合成以及氧化物薄膜材料制备的新路线。这些材料既可以制成薄膜材料也可以制成独立的量子点,后者是一类新型材料,其性能是由粒子的尺寸大小控制的。这些材料将会形成现代光电子技术如发光二极管和晶体管等的基础。在英国Manchester大学和Sheffield大学获得了足够的材料合成化学经验和材料与器件特性表征技术。可以自由使用英国Sheffield大学电子与电气工程系EPSRC III-V族化合物半导体技术国家中心和Manchester大学材料科学中心的仪器设备。此外,和美国Massachusetts 理工学院和California大学Beckley分校建立了广泛的联系。
求学与工作简历:
1997-2000年5月任华中理工大学电子科学与技术系微电子学与固体电子学讲师;
20006月-2003年7月任华中科技大学电子科学与技术系和教育部功能陶瓷工程研究中心副教授;
2003年7月起任华中科技大学电子科学与技术系和教育部功能陶瓷工程研究中心教授。
2002-2003年在英国Sheffield大学电子与电气工程系EPSRC III-V族化合物半导体技术国家中心做访问学者。
参加的专业团体:
中国材料研究学会
中国腐蚀与防护学会
中国青年材料产业化促进协会
代表性论文(著作):
目前已发表40多篇文章或综述
-
主页访问
853
-
关注数
0
-
成果阅读
224
-
成果数
4
张道礼, Daoli Zhang ∗, Zhibing Deng, Jianbing Zhang, Liangyan Chen
Materials Chemistry and Physics 98 (2006) 353-357,-0001,():
-1年11月30日
Antimony-doped tin oxide thin films have a range of technical applications as conductive coatings, and sol–gel processing seems to offer some advantages over other coating techniques. In this study, undoped and antimony-doped tin oxide (ATO) thin films were prepared by sol–gel process in the solution of metal salts of tin (II) chloride dehydrate and antimony tri-chloride. It has been found that the heat-treatment temperature and doping level had strong influences on the microstructure and composition of Sb:SnO2 films. The microstructure of the thin films was analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD). The SnO2 crystals existed mainly as tetragonal rutile structure in the present work. The optimum heat-treatment temperature was about 450–500 ◦C, and the film was composed with nano-crystals and nano-pores. Compared with undoped tin oxide, doped antimony tin oxide films coated glass substrate were homogenenous in composition and morphology after being sintered at different temperatures. Electrical behavior of the doped films was discussed in terms of sheet resistance measured by four point probe. From the experimental data, the sheet resistance of the films could be as low as 100Ω/□.
Antimony-doped tin oxide (, ATO), thin films, Sol–gel process, Microstructure, Electrical properties
-
75浏览
-
0点赞
-
0收藏
-
0分享
-
711下载
-
0评论
-
引用
张道礼, Daoli Zhang *, Guang’an Weng, Shuping Gong, Dongxiang Zhou
Materials Science and Engineering B99 (2003) 88-92,-0001,():
-1年11月30日
In the present paper, the research on the sintering mechanism of BaTiO3-based Positive Temperature Coefficient of Resistance (PTCR) semiconductive ceramics was carried out. According to the mechanisms of surface diffuse and volume diffuse, the comprehension acting mechanism was suggested, the kinetic equation was proposed at the initial stage of sintering, and the initial stage of sintering process was simulated by a computer. We obtained the object illustrations about the relationships between the grain growth of the initial stage of sintering on BaTiO3-based PTCR ceramics and sintering temperatures, as well as the particle sizes of raw materials.
BaTiO3-based PTCR ceramics, Computer simulation, Initial stage of sintering, Sintering kinetics
-
31浏览
-
0点赞
-
0收藏
-
0分享
-
295下载
-
0评论
-
引用
张道礼, Daoli Zhang *, Guang’an Weng, Shuping Gong, Dongxiang Zhou
Materials Science and Engineering B99 (2003) 428-432,-0001,():
-1年11月30日
This paper presented a novel modified Q-states Potts Monte-Carlo computer simulation procedure applied to simulate the grain growth of intermediate and final stages of sintering and Ostwald ripening process of BaTiO3 Positive Temperature Coefficient of Resistance (PTCR) ceramics, and the effects of liquid-phases on the grain growth of BaTiO3-based PTCR ceramics. The computer simulating models of the grain growth of the sintering process were established by the theory of the grain growth. The simulating results indicated that (1) the liquid-phase would hinder the motion of the grain-boundary, and the ratio of the grain growth was limited so that the size of the grains was smaller than those of the single-phase system; (2) the shrinkage of a BaTiO3 PTCR ceramics almost ceased at the temperature of 1513 K or so in the two-phase system, and the soaking stage involved the densification and grain growth of ceramics controlled by liquid-phases.
BaTiO3-based PTCR ceramics, Computer simulation, Intermediate and final stages of sintering, Ostwald ripening, Grain growth
-
66浏览
-
0点赞
-
0收藏
-
0分享
-
132下载
-
0评论
-
引用
张道礼, Daoli Zhanga, b, Dongxiang Zhoua, Shenglin Jianga, Xiaohong Wanga, Shuping Gong
Sensors and Actuators A 101 (2002) 123-131,-0001,():
-1年11月30日
The failure behaviors, by the action of ac electric field, of commercial BaTiO3-based positive-temperature-coefficient (PTC) current-limiting ceramic thermistors coated with electroless Ni electrodes were investigated. We observed five failure behaviors, namely, (1) comminuted cracking; (2) the rise of resistance value at room temperature; (3) the burnout of electrodes; (4) delamination of ceramic; and (5) the melting of ceramic. Indeed, these phenomena were correlated to the stress (including thermal and internal stresses), electric field distribution, temperature distribution, production and expansion of micro-cracks, and voltage effect. In addition, the ac shock characteristics of BaTiO3-based PTCR ceramic were related to the content of phosphorus in the electroless nickel-phosphorus alloy and thickness of the nickel electrodes. According to the experiments, the thickness of the electroless nickel alloy shoud be <1um and the phosphorus content, 4 wt.% in the alloy.
Failure behaviors, Failure mechanisms, Current-limiting PTCR, BaTiO3-based ceramic, Electroless nickel electrode
-
52浏览
-
0点赞
-
0收藏
-
0分享
-
204下载
-
0评论
-
引用