刘兴钊
BST铁电薄膜、半导体SiC外延薄膜、半导体低维结构等
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- 姓名:刘兴钊
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学术头衔:
博士生导师
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学科领域:
微电子学
- 研究兴趣:BST铁电薄膜、半导体SiC外延薄膜、半导体低维结构等
刘兴钊,男,教授,1966年3月出生。1989年毕业于武汉大学物理系,1992年从中科院固体物理研究所获硕士学位,1999年在电子科技大学获博士学位。1997年至1998年在德国FZK研究中心开展客座研究。长期从事电子薄膜材料的生长研究,主要研究方向包括:BST铁电薄膜、半导体SiC外延薄膜、半导体低维结构等,在Thin Solid Films、Physica C、Superconductor Science and Technology、Jpn. J. Appl. Phys.等杂志发表及合作发表论文40多篇,获国家发明二等奖、省部一等、二等奖各一项(排名第二)。
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刘兴钊, X.Z. Liu*, Y.R. Li, B.W. Tao, A. Luo, S.M. He
Physica C 371(2002)133-138,-0001,():
-1年11月30日
The dependence of YBCO thin film properties on the deposition rate was studied in this report. The thermodynamic growth parameters (substrate temperature, total pressure and oxygen partial pressure) were optimized at a fixed deposition rate first. Then keeping the thermodynamic growth parameters optimized values, YBCO thin films were deposited at different deposition rates. The effect of the deposition rate on the superconducting transition properties, caxis lattice constant, concentration of lattice disorder and surface smoothness of YBCO thin films was studied. The measurements show that the optimized thermodynamic growth parameters are closely correlated to the deposition rate. At a fixed deposition rate of 0.5AA/s and its optimal thermodynamic growth parameters, YBCO thin films with superior superconducting transition temperature, the lowest concentration of lattice disorder, and the lowest surface roughness were prepared. By using the same thermodynamic growth parameters, changes in deposition rate were shown to degrade the superconducting transition temperature, increase the lattice disorder, and increase the roughness of the YBCO thin films.
Thin films, Microstructure, Superconductivity
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【期刊论文】The preparation of double-sided YBCO thin films by simultaneous sputtering from single target
刘兴钊, X.Z. Liu*, B.W. Tao, A. Luo, S.M. He, Y.R. Li
Thin Solid Films 396(2001)225-228,-0001,():
-1年11月30日
The preparation of 1-inch double-sided YBCO thin films by simultaneous sputtering from a single target is reported. By rotating the substrate around the rod of the substrate holder and the normal of the substrate, YBCO thin films were simultaneously deposited on both sides of 1-inch (100)LaAlO3 substrate from a single inverted cylindrical sputter gun. The TC0 values of the YBCO thin films on both sides of the wafer were 90.3 and 90.4K, respectively. The transition width was 0.8K. The microwave surface resistance, Rs (77K, 10GHz), of the YBCO thin films on both sides of the wafer were 330 and 400mV, respectively. The uniformity of Rs values over the whole 1-inch wafer is good and the properties of YBCO thin films were found to be very similar on both sides of the wafer.
Deposition process, Sputtering, Superconductivity, Plasma process and deposition
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【期刊论文】The crystal perfection improvement of Y1 Ba2 Cu3 O7-x thin films by afterglow plasma process
刘兴钊, X.Z. Liu a, *, Y.R. Li a, B.W. Tao a, A. Luo a, J. Geerk b
Thin Solid Films 371 2000. 231-234,-0001,():
-1年11月30日
In this article, we report the growth of purely (001). oriented single crystal Y1Ba2Cu3O7yx thin films with excellent crystal perfection by afterglow plasma sputtering. Because of little energetic ion and electron bombardment, the crystal perfection of Y1Ba2Cu3O7yx thin films was significantly improved. The full width at half-maximum value of the rocking curve around the (005). diffraction peak of the films is 0.12
Glow discharge, Plasma processing and deposition, Sputtering, Superconductivity
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刘兴钊, Shiming He*, Yanrong Li, Xingzhao Liu, Bowan Tao, Dehong Li, Qingfang Lu
Thin Solid Films 478(2005)261-264,-0001,():
-1年11月30日
The effects of grain size on nonlinear dielectric properties of as-deposited SrTiO3(STO) thin films were studied by using interdigital capacitor. C-axis-oriented STO thin films with different grain size were deposited onto interdigital electrodes made from YBa2Cu3O7-x thin films by pulsed laser deposition (PLD) technique. The grain size of as-deposited STO thin films increased with substrate temperature, and reached a maximum value at 700℃. With further increase of substrate temperature, the grain size decrease rapidly because of the negative oxygen supersaturation and the high nucleation density. The nonlinear dielectric properties measurements showed to be highly correlated with the grain size of STO thin films; the zero-bias dielectric constant, the dielectric dissipation, and the tunability decreased with the decrease of the grain size.
Atomic force microscopy (, AFM), , Dielectric properties, Grain boundary, Growth mechanism, Ferroelectric materials, Pulse laser deposition, X-ray diffraction
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