王保平
主要从事真空微电子学研究
个性化签名
- 姓名:王保平
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学术头衔:
博士生导师
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学科领域:
半导体技术
- 研究兴趣:主要从事真空微电子学研究
王保平,男,1961年6月出生,1983年毕业于南京工学院电真空器件专业;1983-1985年在北京广电部从事SAT摄像管研制;1985-1988年,在东南大学物理电子学攻读硕士并获硕士学位;1988-1991年,东南大学研究生院从事学位管理工作,讲师;1991年,东南大学物理电子学在职博士;1995年获博士学位;1996年晋升为副教授;同年,赴香港科技大学博士后研究一年,主要从事真空微电子学研究;1999年,晋升为教授。1997年获东南大学“优秀教师”称号,1999年获江苏省优秀科技工作者称号。现任国际电工委员会IEC TC110 WG4(PDP国际标准)工作小组成员、国际信息显示学会北京分会理事长、中国真空学会江苏省真空学会理事长。
1991年以来,先后主持并完成多项科研任务。1997年开始等离子体平板显示器PDP的研究。1998年获国家自然科学基金一项。98年以来,主持东飞中心工作,主管东南大学与荷兰飞利浦公司的合作项目,获经费资助1700多万元人民币。1999年由于富有创造性的研究工作成为国家科技部“九五”双重科技攻关项目“大屏幕全彩色新型槽型PDP的研究”的项目负责人。1991年以来,在国内外重要刊物上发表文章70多篇,其中SCI收录15篇,EI收录35篇。
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成果数
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【期刊论文】Electrostatic Analysis of Field Emission Triode With Volcano-typed Gate
王保平, Bao Ping Wang* and Linsu Tong
,-0001,():
-1年11月30日
More researchers hme paid mltch attention to fabrication of field emission triode with volcano-typed gate on the silicon substrate in recent years because of ease of fabrication and low cost. In this paper, five different structures of this triode are presented The electric field of the top of field emitter(Etip) is calculated in these structures by using EMAS software, and the different potential distribution and electric field distribution are got from these calculations. The results show that the diameter of gate hole gives much effect of the Etip fof" this triode, Because the volcano-typed gate holes fabricated by wet or dry etching have the very sharp rim, when the space between anode and gate is small, the high electric fieM more than 1
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【期刊论文】Novel Single- and Double-Gate Race-Track-Shaped Field Emitter Structures
王保平, Baoping Wang*, Johnny K. O. Sin, Jun Cai, M. C. Poon, Yongming Tang†, Chen Wang†, and Linsu Tong†
,-0001,():
-1年11月30日
In this paper, new single- and double-gate race-track-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100V, and the field emission current density is approximately 2.4A/cmz which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% compared to the single-gate structure.
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王保平, Baoping Wang, Johnny K. O. Sin, Senior Member, IEEE, Jun Cai, Vincent M. C. Poon, Member, Chen Wang, Yongming Tang, and Linsu Tong
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO.2, FEBRUARY 1998,-0001,():
-1年11月30日
In this paper, numerical and experimental characterization of new single-and double-gate race-track-shaped field emitter structures are reported. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage and minimum gate current. Experimental results show that the turn-on voltage of the singlegate structure is approximately 100V, and the field emission current density is approximately 2.4A/cm2. Furthermore, field emission characteristics of the single- and double-gate structures are numerically simulated. Results show that turn-on voltage of the double-gate structure is reduced by 30% and ratio of anode current to gate current is increased by 36 times compared to that of the single-gate structure at a gate voltage of 350V.
Displays,, electron emission,, RF amplifier,, vacuum microelectronics.,
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