许小红
主要从事超高密度磁记录薄膜和稀磁半导体薄膜材料的制备、结构与性能的研究
个性化签名
- 姓名:许小红
- 目前身份:
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学术头衔:
博士生导师, 教育部“新世纪优秀人才支持计划”入选者
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学科领域:
材料科学基础学科
- 研究兴趣:主要从事超高密度磁记录薄膜和稀磁半导体薄膜材料的制备、结构与性能的研究
许小红,女,1966年4月生,博士,教授,博士生导师。1988年7月毕业于天津大学材料科学与工程系,获学士学位;1996年4月毕业于北京科技大学理化系,获硕士学位;2001年4月毕业于西安交通大学材料科学与工程学院,获博士学位。2001年7月至2003年7月,在华中科技大学博士后流动站工作,并获华中科技大学优秀博士后称号。2004年10月至2005年10月获英国皇家学会的资助在英国设菲尔德大学物理系工作(研究员)。2006年7月至10月在日本东北大学电气通讯研究所工作(高级研究员)。
现任山西师范大学科技处处长,材料化学研究所所长,“结构无机与磁信息材料”教育部重点实验室副主任。山西师范大学学报(理科版)编委,山西省委联系的高级专家。许小红教授创建和发展了山西师范大学“材料化学研究所”,是“材料物理与化学”山西省重点建设学科的第一负责人。
许小红教授2000年被确定为山西省第八届青联委员,2003年被评为山西省优秀女教职工,2004年被评为山西省“三八红旗手”,2005年被确定为山西省高等学校青年学术带头人,2007年获山西省教科文卫体系统知识女性创新成果奖,并被评为山西省模范教师,2007年被确定为教育部新世纪优秀人才、山西省委联系的高级专家,2008年入选山西省“新世纪学术技术带头人333人才工程”,2009年被评为山西省教科文卫体系统第二届“十大杰出知识女性”称号。
主要从事超高密度磁记录薄膜和稀磁半导体薄膜材料的制备、结构与性能的研究。近年来,共主持1项国家“863”计划项目,2项国家自然科学基金项目,1项教育部优秀人才资助计划和9项省部级科研项目。获山西省科技进步一等奖2项,山西省科技进步二等奖1项,山西省高等学校科技进步一等奖2项。在《Phys. Rev. Lett》、《J. Am. Chem. Soc.》、《Appl. Phys. Lett.》、《Physical Review B》、《New J. Phys.》、《J. Appl. Phys.》、《J. Magn. Magn. Mater.》《Thin Solid Film》、《Appl. Surf. Sci.》、《Mater. Phys. Chem.》、《中国科学》、《科学通报》等国际、国内重要学术期刊上发表SCI收录论文89篇。撰写《压电薄膜的制备、结构和应用》著作一部并由科学出版社出版。
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20
【期刊论文】Magnetic and transport properties of n-type Fe-doped In2O3 ferromagnetic thin films
许小红, Xiao-Hong Xu, , a) Feng-Xian Jiang, Jun Zhang, Xiao-Chen Fan, Hai-Shun Wu, and G. A. Gehring
APPLIED PHYSICS LETTERS 94, 212510 (2009),-0001,():
-1年11月30日
Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, composition, and transport studies indicated that Fe occupied the In sites of the In2O3 lattice rather than formed any metallic Fe or other magnetic impurity phases. Magnetic moments of films were proved to be intrinsic and showed to have a strong dependence on the carrier densities, which depended on the Fe concentration and its valence state as well as oxygen pressure.
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【期刊论文】FeAu/FePt exchange-spring media fabricated by magnetron sputtering and postannealing
许小红, Fang Wang, Xiaohong Xu, a) Yan Liang, Jing Zhang, and Haishun Wu
APPLIED PHYSICS LETTERS 95, 022516 (2009),-0001,():
-1年11月30日
Soft/hard bilayers consisting of a FeAu layer with different thicknesses and a 20nm L10-FePt layer have been fabricated by magnetron sputtering and postannealing. FeAu soft layer not only can promote the ordering degree of FePt layer because of the small lattice mismatch between them and the diffusion of Au atoms into FePt boundaries, but also can reduce the coercivity due to the soft/hard exchange coupling. The results of x-ray photoelectron spectroscopy indicate that a graded interface is formed in the FeAu/FePt bilayer after annealing, which is beneficial to reduce the pinning field. The magnetization reversal in the FeAu/FePt exchange-spring media occurs by the nucleation and propagation of a domain wall from soft layer into hard layer.
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【期刊论文】Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films
许小红, Xiao-Li Li, , a) Xiao-Hong Xu, b) Zhi-Yong Quan, Jun-Feng Guo, Hai-Shun Wu, and G.A. Gehring
JOURNAL OF APPLIED PHYSICS 105, 103914 (2009),-0001,():
-1年11月30日
Zn0.97Cu0.03O films were prepared by pulsed-laser deposition on c-cut sapphire substrates under various conditions in order to investigate the growth-dependent properties of the films. All the films exhibit room temperature ferromagnetism. Samples deposited at low temperature and low pressure show large saturation magnetization Ms. Moreover, the enhancement of Ms was observed in films annealed both in vacuum and in Zn vapor. However, postannealing in air led to the remarkable reduction of ferromagnetism. The results show that the itinerant electrons introduced by oxygen-deficient or Zn-rich atmospheres may play a significant role in room temperature ferromagnetism observed in this ZnCuO dilute magnetic semiconductor. It is consistent with carrier-induced ferromagnetism. The magnetization strongly depends on the appearance of free carriers and is relatively insensitive to whether they arose from VO or/and Zni.
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许小红, A. J. Behan, A. Mokhtari, H. J. Blythe, D. Score, X-H. Xu, * J. R. Neal, A. M. Fox, and G. A. Gehring†
PHYSICL REVIEW LETTERS PRL 100, 047206 (2008),-0001,():
-1年11月30日
Films of ZnO doped with magnetic ions Mn and Co and, in some cases, with Al have been fabricated with a very wide range of carrier densities. Ferromagnetic behavior is observed in both insulating and metallic films, but not when the carrier density is intermediate. Insulating films exhibit variable range hopping at low temperatures and are ferromagnetic at room temperature due to the interaction of the localized spins with static localized states. The magnetism is quenched when carriers in the localized states become mobile. In the metallic (degenerate semiconductor) range, robust ferromagnetism reappears together with very strong magneto-optic signals and room temperature anomalous Hall data. This demonstrates the polarization of the conduction bands and indicates that, when ZnO is doped into the metallic regime, it behaves as a genuine magnetic semiconductor.
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【期刊论文】Monte Carlo simulation of growth of binary bcc structured layers
许小红, Rui-Qiang Zhang, Xiao-Hong Xu, , * Shun-Yan Zhang, and Gillian A. Gehring
PHYSICAL REVIEW B 78, 075419 (2008),-0001,():
-1年11月30日
Pulsed laser deposition is a very promising experimental technique for growing layers of nanoscale thickness. In this paper, the growth of a perovskite structured film grown on a perovskite substrate is simulated using the Monte Carlo procedure and LaMnO3 is taken as an example. In the model, we consider the motion of the La and Mn atoms, and assume the oxygen atoms follow the metal atoms. The quality of the film is controlled by three parameters: namely, the temperature of the substrate, the kinetic energy of the atoms, and the average coverage of each pulse. The simulated results show that the quality of the films is strongly dependent on the three parameters. We analyzed the composition of the films layer by layer and find an interesting phenomenon: if the deposition conditions are not optimal, the fraction of wrong atoms fractional mismatch presents odd-even staggering as the number of deposited atom layers increases.
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【期刊论文】Nearly perfect (001)-oriented Ag/[CoPt/C]5/Ag composite films deposited on glass substrates
许小红, X.H. Xu*, T. Jin, H.S. Wu, F. Wang, X.L. Li, F.X. Jiang
Thin Solid Films 515 (2007) 5471-5475,-0001,():
-1年11月30日
Sandwich Ag/[CoPt(3nm)/C(3nm)]5/Ag films were deposited on glass substrates by magnetron sputtering. After annealing at 600℃ for 30min, a nearly-perfect (001)-oriented L10 CoPt film with extremely high perpendicular anisotropy was obtained when the thickness of Ag topand underlayer were both equal to 5nm. The strain energy caused by the Ag layer together with the diffusion of Ag and C atoms, resulted in the enhancement of the ordering degree of the L10 CoPt phase and the development of the (001) texture of the films.
Sputtering, X-ray diffraction, Magnetic properties and measurements, Anisotropy
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【期刊论文】Texture development and magnetic properties of [ZrO2/CoPt]n/Ag nanocomposite films
许小红, Xiao-Hong Xu*, Xiao-Hua Shen, Xiao-Li Li, Fang Wang, Feng-Xian Jiang, Hai-Shun Wu
Applied Surface Science 253 (2007) 3382-3386,-0001,():
-1年11月30日
The L10 CoPt films with (001) preferred orientation are achieved by fabricating on the glass substrates and post annealing at 600℃ for 30min. The preferred orientation of [ZrO2/CoPt]n/Ag films dependence of the Ag underlayer thickness, ZrO2 and CoPt interlayer thickness is investigated. A large perpendicular magnetic anisotropy and a nearly perfect L10 CoPt (001) texture are obtained in the [ZrO2 (3nm)/CoPt (5nm)]3/Ag (10nm) film. The existence of ZrO2 plays an important role in reducing the intergranular interactions and in determining the size of CoPt grains. Magnetic reversal in textured CoPt films are close to a Stoner-Wolfarth rotation.
CoPt magnetic films, ZrO2-doping, (, 001), texture, Magnetic anisotropy
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【期刊论文】Carrier-induced ferromagnetism in n-type ZnMnAlO and ZnCoAlO thin films at room temperature
许小红, X H Xu, , H J Blythe, M Ziese, A J Behan, J R Neal, A Mokhtari, R M Ibrahim, A M Fox and G A Gehring
New Journal of Physics 8 (2006) 135,-0001,():
-1年11月30日
The realization of semiconductors that are ferromagnetic above room temperature will potentially lead to a new generation of spintronic devices with revolutionary electrical and optical properties. Transition temperatures in doped ZnO are high but, particularly for Mn doping, the reported moments have been small.We show that by careful control of both oxygen deficiency and aluminium doping the ferromagnetic moments measured at room temperature in n-type ZnMnO and ZnCoO are close to the ideal values of 5μB and 3μB respectively. Furthermore a clear correlation between the magnetization per transition metal ion and the ratio of the number of carriers to the number of transition metal donors was established as is expected for carrier-induced ferromagnetism for both the Mn and Co doped films. The dependence of the magnetization on carrier density is similar to that predicted for the transition temperature for a dilute magnetic semiconductor in which the exchange between the transition metal ions is through the free carriers.We observe a positive magnetoresistance but no anomalous Hall effect or anisotropic magnetoresistance in the ferromagnetic samples.
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【期刊论文】High temperature ferromagnetism of the vacuum-annealed (In1-xFex)2O3 powders
许小红, Feng-Xian Jiang a, b, Xiao-Hong Xu a, *, Jun Zhang a, Hai-Shun Wu a, G.A. Gehring c
Applied Surface Science 255 (2009) 3655-3658,-0001,():
-1年11月30日
(In1-xFex)2O3 (x=0.02,0.05,0.2) powders were prepared by a solid state reaction method and a vacuum annealing process. A systematic study was done on the structural and magnetic properties of (In1-xFex)2O3 powders as a function of Fe concentration and annealing temperature. The X-ray diffraction and high-resolution transmission electron microscopy results confirmed that there were not any Fe or Fe oxide secondary phases in vacuum-annealed (In1-xFex)2O3 samples and the Fe element was incorporated into the indium oxide lattice by substituting the position of indium atoms. The X-ray photoelectron spectroscopy revealed that both Fe2+ and Fe3+ ions existed in the samples. Magnetic measurements indicated that all samples were ferromagnetic with the magnetic moment of 0.49-1.73 mB/Fe and the Curie temperature around 783 K. The appearance of ferromagnetism was attributed to the ferromagnetic coupling of Fe2+ and Fe3+ ions via an electron trapped in a bridging oxygen vacancy.
Diluted magnetic semiconductor, High Curie temperature, Fe-doped In2O3, Vacuum annealing
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【期刊论文】Enhancement of magnetic moment of Co-doped ZnO films by postannealing in vacuum
许小红, Xiao-Li Li, Zhu-Liang Wang, Xiu-Fang Qin, Hai-Shun Wu, and Xiao-Hong Xu a), G. A. Gehring
J. Appl. Phys. 103, 023911 (2008,-0001,():
-1年11月30日
The Co-doped ZnO thin films were prepared on c-cut sapphire substrates by magnetron cosputtering, and then annealed at various temperatures in vacuum. Magnetic measurements indicate that all the films are ferromagnetic at room temperature and the magnetization of the annealed Zn0.88Co0.12O films is increased about one order of magnitude in comparison with the corresponding as-deposited one. The enhancement of magnetization is possibly due to the fact that the generation of oxygen vacancies during annealing in vacuum increases the carrier (electron) concentration, which is consistent with the mechanism of carrier-induced ferromagnetism. Optical spectrometry indicates that Co2+ enters the tetrahedral sites of the wurtzite structure of ZnO host and substitutes for Zn2+.
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