张树人
个性化签名
- 姓名:张树人
- 目前身份:
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- 学位:
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学术头衔:
博士生导师
- 职称:-
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学科领域:
材料科学
- 研究兴趣:
张树人,教授、博士生导师,1982年毕业于华南理工大学无线电工程系;1986年在中科院上海硅酸盐研究所研究生毕业后到电子科技大学工作至今。其间曾于90-92年获中英友好奖学金资助在英国威尔士大学电子工程系进修,并分别于94年与98年两度应邀赴美国Penn. State University-MRL作短期访问进修,2000年作为公派高级访问学者赴英学习三个月。95年受聘正教授,98年受聘博士生导师,IEEE高级会员,中国电子学会电子元件分会副主任,中国电子元件行业协会电子陶瓷分会副理事长,四川省政府科技顾问团顾问, 四川省学术带头人, 2003年被中央组织部、人事部、科技部、教育部等六部委评为“全国留学回国人员先进个人”, 国家国防新材料科技奖评委、国防科工委科技奖评委。
自2000年以来,在国内外重要刊物Phys.Rev.B、J.Appl.Phys.、Jpn.J.Appl. Phys.、J.Amer.Ceram.Soc、J. of Material Science、Journal of Crystal Growth、Physics Letters A、 Thin Solid Film、 J.Sol-Gel Sci.Tech、Journal of Materials Science Material in Electronics、硅酸盐学报、无机材料学报、真空科学与技术、压电与声光、仪器仪表学报等上发表论文80余篇,被SCI收录30多篇、Ei收录20多篇。参编专著3部。作为项目负责人圆满完成了863重大课题半导体陶瓷电容器、部级研究项目高可靠MLC及高导热纳米BeO陶瓷的研究并成功实现技术转化,以新型高性能电子元器件技术入股组建的成都宏明电子科大新材料公司效益良好,促进了电子元件行业的技术进步。2000年获省科技进步二等奖一项,2004年获全国优秀发明专利奖一项,获教育部科技进步一等奖一项,2006年获国防科技二等奖一项。
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1107
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成果阅读
149
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成果数
4
张树人, Sheng Wang*, Shuren Zhang, Xiaohua Zhou, Bo Li, Zhu Chen
Materials Letters 59(2005)2457-2460,-0001,():
-1年11月30日
The effect of Yb/Mg co-doping on the microstructure and electrical properties of BaTiO3 ceramics sintered under oxidizing, reducing andannealed conditions was investigated. XRD analyses indicated the suppression of the solubilities of the acceptor ions in BaTiO3 under thereducing and annealed conditions. DSC measurements indicated that addition of too much Yb would cause the collapse of the core-shellstructure in the BaTiO3 ceramics. The effect of sintering atmospheres on the microstructure and dielectric properties was attributed to thechange of the solubilities of the acceptor ions in this core-shell-structured material.
BaTiO3, Dielectric properties, Microstructure, Capacitors, X8R
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张树人, Jingsong Liu, Shuren Zhang*, Chengtao Yang, Junlian Zhou
Journal of Crystal Growth 264(2004)302-306,-0001,():
-1年11月30日
Pb(Zr0.52Ti0.48)O3 (PZT) films have been fabricated on Pt/Ti/SiO2/Si substrates with a new chemical solutiondeposition technique, in which each layer of PbZrO3 (PZ) and PbTiO3 (PT) was heated to 600℃ as soon as it was spincoated. The fabrication of the homogeneous PZT film was finished through the reaction between the PT and PZ layersand without post-annealing. By surveying the variations of the surface micrographs during the deposition process, anisland-column hybrid growth mode could be concluded. The low-temperature fabrication brings about enhancedfatigue resistance because of the suppression of the formation of the oxygen vacancies. Measurements of theferroelectric properties suggest a promising application for the ferroelectric memory devices.
A1., Solid state reaction, A3., Chemical solution deposition, B2., Ferroelectric materials
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张树人, Jingsong Liu ∗, Shuren Zhang, Fugui Chen, Chengtao Yang, Xiaohua Zhou
Physics Letters A 321(2004)199-204,-0001,():
-1年11月30日
Wolframium ions doped SrBi2Ta2O9 ceramics have been synthesized by the conventional mixed-oxide method. A sawtoothlikehysteresis loop was observed at low measuring-frequency. This phenomenon was thought to be related with the perturbationof the defect-dipole polarization under an external electrical field. A developed physical-model was derived on the basis ofsimplifying such perturbation to a simple harmonic pendulum oscillator, which combines physical considerations with thewell-known Preisach model. On the hypothesis of the simple harmonic pendulum oscillator, the included-angle between thedefect-dipole polarization and the elementary-dipole polarization can be expressed as the product of the defect-dipole relaxationvelocity and permitted relaxation time. Simulation result was excellently agreed with the observed measurement.
Ferroelectrics, Polarization, Perturbation, Relaxation
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张树人, Shuren Zhang*, Jingsong Liu, Chaowei Zhong, Chengtao Yang
Journal of Crystal Growth 262(2004)348-352,-0001,():
-1年11月30日
SrBi2Ta2O9 (SBT) thin films fabricated by pulsed-laser deposition, on the same substrates and under different deposition conditions, were found showing different textures. The influence of the deposition condition on the textureof the SBT films can be explained by the variations in two aspects. One is the interactions between the plume and thesubstrate, the other is the composition of the laser-deposited film. The relations between the texture and the ferroelectricproperty of the films were also discussed. It was found that the ferroelectric properties, such as the polarization and thecoercive field, had a strong dependence on the texture of the SBT films. These results are of interest for the fabricationof ferroelectric memories with fatigue-free SBT thin films
A1., Texture, A3., Pulsed-laser deposition, B1., Bismuth compounds, B2., Ferroelectric materials
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