刘玉岭
个性化签名
- 姓名:刘玉岭
- 目前身份:
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师
- 职称:-
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学科领域:
微电子学
- 研究兴趣:
刘玉岭,教授,博士生导师,任天津市科技进步奖评审委员会评委;天津市发明协会理事会理事;河北省学位评定委员会委员;中国洗净协会副理事长;中国洗净协会洗净新技术委员会理事长;"微纳电子技术"常务理事;美国电化学分会亚洲分会CMP分会主席;中国航空集团618研究所技术专家。国家级有突出级中青年专家;国务院特殊津贴专家;南开大学兼职教授;第九、十届全国政协委员,天津新技术产业园区晶岭高科技有限公司法人代表。
多年来在信息材料表面科学与技术第一线从事产、学、研,坚持理论研究、实验研究与工程应用紧密结合,作为第一发明人取得了24项具有自己知识产权和国际先进水平的成果,并实现了产业化,代替了美国进口,部分出口。获得国家发明奖5项,省部级科技发明与进步奖19项,取得发明专利4项;出版专著3部,作为第一作者发表论文118篇,培养硕士、博士28名;被授予国家级有突出贡献中青年专家、河北省十大发明家、天津市劳动模范等称号;以他为学术带头人的微电子学科是硕士、博士、博士后等高层次人才培养的省级重点学科。1994年领衔创建了微电子技术与材料相结合的产学研实体,建立4000吨表面加工耗材生产线,产品已在京、津、沪、浙等十多个省市的引进生产线上取代了进口,进行新技术培训一千余人次。台湾广润科技公司、台湾弘弦科技公司、英国Golden Prosperity Limited公司、国家工程物理九院、中国航空集团飞行自动化控制研究所、兰新集团公司、电子45所等国内外众多企业与他签订了技术协议。是我国微电子技术与材料领域技术带头人,在国内外表面精细加工领域享有较高的声誉。
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169
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成果数
4
【期刊论文】Study on the cleaning of silicon after CMP in ULSI
刘玉岭, Yuling Liu a, Kailiang Zhang a, *, Fang Wang b, Yunpeng Han a
Microelectronic Engineering 66(2003)433-437,-0001,():
-1年11月30日
In this paper, the cleaning of silicon after CMP (chemical mechanical polishing) in ULSI was studied utilizing preferential adsorption knowledge. On the basis of analyzing adsorption state of contaminated particles on polished silicon wafer and interrelated adsorption theory, the preferential adsorption model is put forward: t=kr2/(f1f2s). Non-ion surfactant is chosen and acts as the second kind of adsorbate, which is preferentially adsorbed onto the polished silicon wafer. The second kind of adsorbate can effectively depress the surface energy of new polished silicon wafer, form a layer of protective film and prevent the chemical adsorption and bonding of the contaminated particle near the surface of polished silicon wafer. In addition, a new kind of chelant, being a free metal ion, is also added in order to chelate and wipe out the metal ion on the polished silicon wafer. Consequently, the organic impurity, impurity particles and metal ion on the silicon surface were wiped out effectively and the silicon has a pure surface after cleaning. The results of cleaning experiments show that the chemical cleaning method in this paper can control the adsorption state of particle on the polished silicon wafer and cause the adsorption state to remain at the physical adsorption state for a long time: even after 168h in the surfactant solution the wafers reach the SEMI standard after being washed.
Cleaning, Preferential adsorption model, Surfactant, CMP, ULSI
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【期刊论文】Investigation on the final polishing slurry and technique of silicon substrate in ULSI
刘玉岭, Yuling Liu a, Kailiang Zhang a, *, Fang Wang b, Weiguo Di a
Microelectronic Engineering 66(2003)438-444,-0001,():
-1年11月30日
In this paper, the final polishing slurry and polishing techniques are studied, which is based on the investigation of the polishing kinetics process and mechanism of the silicon substrate. The new polishing kinetics process and mechanism are put forward. CMP final polishing slurry used in silicon substrate polishing is also researched, in which the smaller size (ranging from 15 to 20nm) silica sols is chosen as abrasive instead of large size silica sol (ranging from 50 to 70nm). The polishing slurry with smaller abrasive and polishing technology effectively reduces the roughness and thickness of the damaged layer resulting from abrasion (commonly about one fourth of the abrasive particle size) and also affords high polishing rate (200nm/min). The influence of PH adjustment, abrasive size, temperature and flow of the polishing slurry, are also discussed. During CMP of silicon substrate, chemical action is reinforced. After more research, the main ingredients, including organic-alkali hydroxide multi-amine, surfactant and abrasion are chosen preferentially. In a word, the compositive effect that includes smaller particle abrasion (ranging from 15 to 20nm), high polishing rate (200nm/min), lower damage, easy washing and higher surface degree of finish, are ultimately achieved by this means of the polishing slurry and polishing techniques in this paper. The final polishing slurry and technology effectively resolve the technique problems, including surface scoring, polishing haze, metal ion contamination and residuary particle. Thereby, IC devices and the rate of final products are markedly improved.
Chemical mechanical polishing (, CMP), , Polishing slurry, Silicon, ULSI
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刘玉岭, 檀柏梅
电子器件,2001,24(2):101~106,-0001,():
-1年11月30日
对甚大规模集成电路(ULSI)多层布线中二氧化硅介质的抛光机理、工艺条件选择、抛光液成分与作用等进行了综合分析,如何使用化学方法提高抛光速率、改善表面状况以及解决金属离子沾污等问题及发展趋势进行了综述,对现存的一些难题提出了改进方案。
化学机械抛光, 全局平面化, 多层布线, ULSI, 二氧化碳
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【期刊论文】ULSI多层铜布线钽阻挡层及其CMP抛光液的优化
刘玉岭, 邢哲, 檀柏梅, 王新, 李薇薇
半导体技术,2004,29(7):18~20(下转第34页),-0001,():
-1年11月30日
分析了铜多层布线中阻挡层的选取问题,根据铜钽在氧化剂存在的情况下,抛光速率对pH值的不同变化趋势,提出优化碱性抛光液配比进而改变pH值,以达到铜钽抛光一致性的方法,并进行了相应的实验研究。
化学机械抛光, 抛光液, 多层布线, 阻挡层, 选择性
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