

高义华
研究领域涉足稀土永磁材料, 磁性薄膜, 金刚石薄膜, 光电薄膜, 水中纳米物质的冰冻透射电镜研究,纳米材料与纳米器件。
个性化签名
- 姓名:高义华
- 目前身份:
- 担任导师情况:
- 学位:
-
学术头衔:
博士生导师, 教育部“新世纪优秀人才支持计划”入选者
- 职称:-
-
学科领域:
凝聚态物理学
- 研究兴趣:研究领域涉足稀土永磁材料, 磁性薄膜, 金刚石薄膜, 光电薄膜, 水中纳米物质的冰冻透射电镜研究,纳米材料与纳米器件。
高义华,1998年中国科学院物理研究所博士毕业并取得博士学位,1999年3月赴日本National Institute for Materials Science 工作,2006年3月回国任武汉光电国家实验室教授。现任华中科技大学武汉光电国家实验室/物理学院楚天学者特聘教授、博士生导师,承担国家自然科学基金、回国人员启动基金、教育部博士点基金、教育部新世纪人才基金和湖北省人才基金等,从事光电热低维材料与器件的研究。指导12名硕士研究生(6名毕业)、4名博士研究生和1名合作博士后发表与完成多篇中文核心期刊与英文文章。以第一作者身份,发表近20 篇第1作者SCI文章 (1篇荣登Nature, 1篇Appl. Phys. Lett.杂志封面, 5篇Appl. Phys. Lett.,全部文章被引用500余次,其中他引400余次,单篇最高引用195次)。
研究领域涉足稀土永磁材料, 磁性薄膜, 金刚石薄膜, 光电薄膜, 水中纳米物质的冰冻透射电镜研究,纳米材料与纳米器件,研究成果影响广泛。其中利用碳原子排列成筒状的新材料,开发成功目前世界最小“纳米温度计”,可用于检查半导体纳米电子回路故障和微区域的温度测控等。其研究成果刊发在2002年2月7日出版的英国《Nature》杂志上,此文章被评为1% Top 文章,并获得一项吉尼斯世界记录。纳米温度计的发现被选为2002年国际重大科技新闻, 以nanothermometer为词搜索, 显示此研究被包括纽约时报在内的400多家世界媒体和研究机构报道,在美国还被选进学生教科书。2005年9月30日, 高义华和他的二位同事:板东义雄(组长)、Golberg(副组长), 因为新型纳米管的研制和纳米温度计的发明一起获颁第16届国际上很有声望的日本筑波奖(Tsukuba Prize,由1973年获物理学诺贝尔奖的江崎玲於奈教授 (Leo Esaki)颁奖;记者招待会上,江崎玲於奈教授和2000年获化学诺贝尔奖的白川英树教授(Hideki Shirakawa)等人陪同3位筑波奖获得者留影纪念)。
-
主页访问
1855
-
关注数
0
-
成果阅读
205
-
成果数
17
【期刊论文】Carbon nanothermometer containing gallium
高义华, Yihua Gao, Yoshio Bando
,-0001,():
-1年11月30日
Figure 1 Expansion of gallium inside a carbon nanotube with increasing temperature. a-c, Changing level of the gallium meniscus at 58℃ (a), 490℃ (b) and 45℃ (c); scale bar, 75nm. d, Height of the gallium meniscus plotted against temperature, measured in steps of 30–50℃; results are averaged (green curve) from closely similar measurements obtained during heating (red) and cooling (blue). The nanothermometer was synthesized in a vertical radiofrequency furnace (which differs from a one-step arc-discharge method). A homogeneous mixture of Ga2O3 and pure, amorphous, active carbon (weight ratio, 7.8:1) was reacted in an open carbon crucible under a flow of pure N2 gas: at 1,360℃, the reaction Ga2O3(solid)&2C(solid)ÕGa2O(vapour)&2CO(vapour) occurs. However, on the inner surface of a pure graphite outlet pipe at the top of the furnace, the temperature is lower (around 800℃), causing the reaction Ga2O(vapour)&3CO(vapour)Õ 2Ga(liquid)&C(solid)&2CO2(vapour) to occur, during which the nanothermometers' are created.
-
38浏览
-
0点赞
-
0收藏
-
0分享
-
135下载
-
0评论
-
引用
高义华, Min Sun, Yihua Gao, Jun Su, Xiangyun Han, Xianghui Zhang, Qi Zhang, Guozhen Shen, Aiqing Zhang, Lei Jin, and Jianbo Wang
,-0001,():
-1年11月30日
A variety of silicon based multilevel branched submicrometer/ nanostructures, such as branched nanowheatheads, big branched nanowheat-heads, and branched nanowires, have been rationally synthesized via a simple one-step, inexpensive, and catalyst-free fabrication technique. High-resolution transmission electron microscopy studies suggested that the main stem of wheat head and the nanotips of silicon branched nanowheat-heads are single crystals with the preferential growth direction along the [112] and [112] and orientation, respectively. Compared with big branched nanowheat-heads and branched nanowires, the room-temperature Raman frequency of branched nanowheat-heads is blue-shifted and its full width at half-maximum broadens. A moderately strong photoluminescence emission at 550 nm was suggested to be induced by defects, such as stacking faults or the SiOx surface in the branched nanowheat-heads, suggesting potential applications in light-emitting nanodevices. These studies shed light on new opportunities for fabricating different 3-dimensional nanostructures based on their property investigation.
-
19浏览
-
0点赞
-
0收藏
-
0分享
-
123下载
-
0评论
-
引用
【期刊论文】Temperature measurement using a gallium-filled carbon nanotube nanothermometer
高义华, Yihua Gao, Yoshio Bando, Zongwen Liu, and Dmitri Golberg, Haruyuki Nakanishi
,-0001,():
-1年11月30日
We report here temperature measurement by means of a Ga-filled C nanotube thermometer with diameter,150 nm and length; 12mm. The method relies on the initial identification and calibration of a nanothermometer in a transmission electron microscope TEM, followed by placing it into an air-filled furnace whose temperature is to be measured, and final TEM reading of a postmeasurement gradation mark visible inside the tubular channel. The mark originates from the fact that, at high temperature, the Ga column tip exposed to the air through the open C nanotube end oxidizes, and a thin Ga oxide layer sticks to the nanotube walls upon cooling. The temperature according to this gradation mark coincides closely with nominal furnace temperature controlled by standard means. The method paves the way for practical temperature measurements using a C nanothermometer in air and within spatially localized regions e.g., dimensions of tens of micrometers.
-
16浏览
-
0点赞
-
0收藏
-
0分享
-
90下载
-
0评论
-
引用
【期刊论文】Melting and expansion behavior of indium in carbon nanotubes
高义华, Yihua Gao, Yoshio Bando, and Dmitri Golberg
,-0001,():
-1年11月30日
Indium-filled carbon nanotubes were synthesized via a simple chemical vapor deposition. The carbon nanotubes had diameters of 100-200 nm and length of; 10mm. The melting and expansion behavior of the indium in carbon nanotubes were investigated in an analytical transmission electron microscope. It was found that the melting and expansion behavior of indium were different from that in a macroscopic state. The melting behavior was explained using a particular equation developed for a nanoscale indium column. The analysis of the expansion behavior allows us to clarify the problems of indium filling usage in carbon nanotube-based nanothermometer.
-
24浏览
-
0点赞
-
0收藏
-
0分享
-
79下载
-
0评论
-
引用
高义华, Yihua Gao and Yoshio Bando
,-0001,():
-1年11月30日
Thermodynamic analysis was performed with respect to the effect of surface tension on the expansion characteristics of a one-dimensional nanoscale liquid Ga column inside a carbon nanotube. The analysis showed that the surface tension affects the column inner pressure, and that the smaller the column diameter, the greater the surface effect. Based on the analysis, it is quantitatively explained why a liquid Ga column with 75 nm diameter has virtually the same expansion coefficient as that of Ga in a macroscopic state in the range of 50 to 500℃, and suggested that the volumetric expansion coefficient can be directly used for the calibration of a given nanothermometer with a diameter larger than 10nm.
-
12浏览
-
0点赞
-
0收藏
-
0分享
-
83下载
-
0评论
-
引用
【期刊论文】Synthesis, Raman scattering and defects of β-Ga2O3 nanorods
高义华, Y.H. Gao, a) Y. Bando, T. Sato, and Y. F. Zhang, X. Q. Gao
,-0001,():
-1年11月30日
Large yield of β-Ga2O3 nanorods with metal Ga tip were efficiently synthesized. They were deposited on surface of amorphous C fibers by decomposition of Ga2O vapor at around 1000℃, where Ga2O vapor was produced at 1360℃ by a reaction between pure Ga2O3 and active carbon powders. The nanorods had diameters ranging from 10 to 100 nm and lengths of up to several tens micrometers. Twins and edge dislocations having a Burgers vector of 0.0859 Å @2.66, 3.66, 1] existed in the nanorods. A redshift of 4-23 cm-1 was found in the Raman scattering spectrum of nanorods compared with that of a pure Ga2O3 powder. This phenomenon was explained qualitatively in terms of the defects in the nanorods.
-
4浏览
-
0点赞
-
0收藏
-
0分享
-
39下载
-
0评论
-
引用
【期刊论文】SiC nanorods prepared from SiO and activated carbon
高义华, Y.H. GAO*, Y. BANDO, K. KURASHIMA, T. SATO
,-0001,():
-1年11月30日
SiC nanorods with 20-100 nm diameter and 10–100μm length were synthesized by reaction between SiO and amorphous activated carbon (AAC) at 1380℃. Microstructural characterization of the SiC nanorods was carried out by high resolution transmission electron microscopy (HRTEM) and energy dispersive spectroscopy (EDS). The SiC nanorods grow on either a chain or from facets of SiC nanoparticles. They are usually straight and preferentially orientated along the [111] direction. Branching phenomenon exists for these nanorods. Typical SiC nanorod tip was analyzed by HRTEM image and EDS analysis. Based on an experimental analysis, a formation mechanism is proposed to explain the microstructural characterization of the SiC nanorods.
-
13浏览
-
0点赞
-
0收藏
-
0分享
-
50下载
-
0评论
-
引用
【期刊论文】Si3N4/SiC interface structure in SiC-nanocrystal-embedded a-Si3N4 nanorods
高义华, Y.H. Gao, a) Y. Bando, K. Kurashima, and T. Sato
,-0001,():
-1年11月30日
Si3N4/SiC interface structure in SiC-nanocrystal-embedded a-Si3N4 nanorods was studied by high-resolution transmission electron microscopy. The SiC-nanocrystal-embedded a-Si3N4 nanorods were synthesized by the method of carbothermal reduction of SiO in pure N2 atmosphere, while the SiC nanocrystals were produced from a substitution of SiC for Si3N4. Between SiC and Si3N4, there are three kinds of plane configurations and a set of orientation relationships, i.e., Si3N4, and nearly (111)SiC//(1010)Si3N4 with low-angle discrepancy of either 3
-
8浏览
-
0点赞
-
0收藏
-
0分享
-
49下载
-
0评论
-
引用
【期刊论文】Synthesis and Microstructural Analysis of Si3N4 Nanorods
高义华, Y.H. Gao, Y. Bando, K. Kurashima, and T. Sato
Microsc. Microanal. 8, 5-10, 2002,-0001,():
-1年11月30日
α-Si3N4 K15nanorods with 20-80 nm width were synthesized by carbothermal reduction of SiO with amorphous activated carbon (AAC) as a reductant. Microstructural characterization of the synthesized nanorods was carried out by high resolution transmission electron microscopy (HRTEM)and energy dispersive X-ray analysis. Many Si3N4 nanorods were found to be twisted. Each twisted nanorod contained several straight Si3N4 parts. The straight parts had the rod axes orientated along the〈1010〉direction, which is the closest packing direction of a-Si3N4. There were two kinds of joints between the two adjacent straight Si3N4 parts. Formation mechanism of the Si3N4 nanorods is discussed.
Si3N4 nanorods, synthesis, high resolution transmission electron microscopy, microstructure,, axis orientation, nucleation,, growth plane
-
6浏览
-
0点赞
-
0收藏
-
0分享
-
42下载
-
0评论
-
引用
【期刊论文】Nanobelts of the dielectric material Ge3N4
高义华, Y.H. Gao, a) Y. Bando, and T. Sato
,-0001,():
-1年11月30日
Ge3N4 nanobelts 30-300 nm in width were synthesized by thermal reduction of a mixed Ge+SiO2 powder in NH3 atmosphere. These nanobelts were studied by high-resolution transmission electron microscope equipped with an x-ray energy dispersive spectrometer. In these synthesized nanobelts, the existence of α and β phases of Ge3N4 was identified. The a phase exhibiting slight difference from an ideal α-Ge3N4 phase was also found in the present Ge3N4 material. The mechanism of formation of the Ge3N4 nanobelts is discussed.
-
10浏览
-
0点赞
-
0收藏
-
0分享
-
47下载
-
0评论
-
引用