钟智勇
主要研究方向为磁性薄膜材料、磁电复合材料、集成/微波磁性器件。
个性化签名
- 姓名:钟智勇
- 目前身份:
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师, 教育部“新世纪优秀人才支持计划”入选者
- 职称:-
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学科领域:
微电子学
- 研究兴趣:主要研究方向为磁性薄膜材料、磁电复合材料、集成/微波磁性器件。
钟智勇,男,1970年生,教授,博士生导师。2000年获电子科技大学微电子与固体电子学专业工学博士学位,2002年-2003年受国家留学基金委资助赴英University of York做访问学者一年。2004年被遴选为四川省杰出青年学术带头人培养对象。2008年入选教育部新世纪优秀人才计划。2009年受聘聘为《Journal of Materials Science and Technology》学术期刊执行编委。
主要研究方向为磁性薄膜材料、磁电复合材料、集成/微波磁性器件。作为项目主持人,承担包括科技部国际科技合作项目、863项目、国家自然基金重大项目子项目和面上项目在内的多项研究,作为研究骨干参加国家自然基金创新群体项目和国家重大基础研究计划(973)项目的科研研究。近五年来,发表SCI收录论文40余篇,参编著作3部,授权国家发明专利5项。曾获国家科技进步奖二等奖1项,四川省科技进步奖一等奖1项及省部级科技二等奖项2项。
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主页访问
2008
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关注数
0
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成果阅读
119
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成果数
4
钟智勇, Zhiyong Zhong, Huaiwu Zhang, Xiaoli Tang and Li Zhang
Transworld Research Network (2008)45-57,-0001,():
-1年11月30日
The authors investigate the magnetization reversal process of a new structure ferromagnetic submicron dot composed of lateral gradient magnetization by micromagnetic simulation. The reversal process in this structure initiates at both edges along and perpendicular to the applied magnetic field due to introducing demagnetizing field from the interface of gradient magnetization. It leads to the two-stage nucleation process in the structures. Based on numerical analysis, a submicron dot with quarter lateral gradient magnetization is proposed to control the chilarity of a vortex, which is important for the application using the vortex's chilarity
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钟智勇, X. L. Tang a, H. W. Zhang, H. Su, Y. L. Jing, and Z. Y. Zhong
JOURNAL OF APPLIED PHYSICS 105(2009)073914-1-073914-4 ,-0001,():
-1年11月30日
In-plane alternating pulses of current applied with an external magnetic field that changes the strength and direction of the exchange bias are observed in NiFe/Cu/NiFe/FeMn spin valves. To provide clear evidence of this spin-polarized current for antiferromagnets incorporated in spin valves, a series of measurements was carried out to rule out the influence of Joule heating caused by the pulse. The measurements revealed that Joule heating plays a minor role in the impact of exchange bias, thus providing more convincing evidence of the spin torque exerted on the interfacial antiferromagnetic moments.
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【期刊论文】Effects of Fe3O4 underlayer on the annealing temperature of CoFe2O4 thin films
钟智勇, Zhiyong Zhong*, , Huaiwu Zhang, Xiaoli Tang, Yulan Jing, Lijun Jia, and Shuang Liu
Phys. Status Solidi A, 206 3(2009)547-549,-0001,():
-1年11月30日
CoFe2O4 films of 100 nm thickness were deposited on 20 nm, rf magnetron-sputtered Fe3O4 underlayers on naturally oxidized Si (100) substrates. These films were then annealed, and the magnetic properties and microstructures were investigated as a function of annealing temperature. Results show that the optimum annealing temperature to obtain the maximum coercivity decreases from 700℃ for films without Fe3O4 underlayers to 500℃ for films with underlayers. The decreased annealing temperature corresponds to a phase transformation of the Fe3O4 underlayers at about 400-500℃, which accelerates the increase in grain size of the cobalt ferrite films.
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钟智勇, Zhiyong Zhong a, *, Huaiwu Zhang a, Xiaoli Tang a, Yulan Jing a, Li Zhang b, Shuang Liu c
Physica E 40(2008)516-519,-0001,():
-1年11月30日
A simplified way, which combines nanosphere lithography with sputtering technology, to fabricate oxide antidot arrays is reported. Using the resputtering effect of oxygen negative ions during sputtering deposition in oxygen environment, CoFe2O4 antidot arrays are fabricated directly on a wafer masked by latex spheres, which is self-assembled by nanosphere lithography. The result shows that the coercivity of the CoFe2O4 antidot arrays increases substantially due to the pinning of domain walls in the vicinity of antidots. This fabrication method can be extended in the fabrication of other oxide antidot arrays.
Magnetic material, Magnetic nanostructure, Nanolithography, Resputtering effect
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