翟继卫
长期致力于电子陶瓷材料与器件的研究工作,研究方向是信息陶瓷材料与器件、纳米复合材料与器件以及铁电薄膜的制备与应用研究、温度传感器等
个性化签名
- 姓名:翟继卫
- 目前身份:
- 担任导师情况:
- 学位:
-
学术头衔:
博士生导师, 教育部“新世纪优秀人才支持计划”入选者
- 职称:-
-
学科领域:
材料科学基础学科
- 研究兴趣:长期致力于电子陶瓷材料与器件的研究工作,研究方向是信息陶瓷材料与器件、纳米复合材料与器件以及铁电薄膜的制备与应用研究、温度传感器等
翟继卫,男, 1963年10月生。1997年毕业于西安交通大学电信学院,获工学博士学位。1987年8月至1994年8月任中国科学院新疆物理研究所助理研究员、副研究员。1998年1月至1999年12月,在同济大学功能材料研究所从事博士后研究工作。2000年起任同济大学研究员,次年任博士生导师。2001年9月至2003年4月在香港城市大学物理学与材料科学系从事研究工作。2004年入选教育部新世纪优秀人才计划。任Journal of Electroceramics、 Materials of Chemistry and Physics、Materials Research Bulletin等刊物的论文评审人。
长期致力于电子陶瓷材料与器件的研究工作,研究方向是信息陶瓷材料与器件、纳米复合材料与器件以及铁电薄膜的制备与应用研究、温度传感器等。作为负责人或技术骨干先后完成了中科院重点研究课题《热敏电阻新材料新工艺研究》、中科院传感器联合开放实验室课题《宽温区高互换热敏电阻的研制》、电子部军工课题《抑制浪涌电流保护用NTC热敏电阻的研制》、国家自然科学基金重大项目 《复相微晶玻璃陶瓷的制备研究》、863高技术研究项目《精细复合功能材料试验研究》等。现负责973基础研究项目中二级子课题项目《铁电陶瓷可逆介电非线性响应与可调机理研究》。
1999以来在国际、国内期刊杂志上先后发表论文65篇。作为第一作者被SCI收录的论文50篇、EI收录论文30余篇;并合作申请中国专利6项。
-
主页访问
2793
-
关注数
0
-
成果阅读
685
-
成果数
12
翟继卫, Jiwei Zhai, Xi Yao, Jun Shen, Liangying Zhang and Haydn Chen
J. Phys. D: Appl. Phys. 37(2004)748-752,-0001,():
-1年11月30日
The Ba(ZrxTi1−x)O3 (BZT) thin films were prepared by deposition of relevant materials on LaNiO3-coated silicon substrates by the sol-gel process. The films thus prepared show a (100) preferred orientation in structure and vary with zirconium content. With the addition of Zr, the grain sizes of films were found to decrease, whereas their microstructure became dense. The changes in the films' grain sizes and microstructure were attributed to the addition of Zr to the BaTiO3 lattice. Dielectric constant measurements revealed that the thin films show a relaxor behaviour and have a diffuse phase tranition characteristic when x is 0.35. The hysteresis loops of the dielectric properties of films measured at room temperature were considered to be the result of the polarization state of the domains in these films in both the ferroelectric or paraelectric state. This leads to a distribution of Curie temperatures. The highest figure of merit value, K, was found for the BZT thin film with a very low dielectric constant. This indicates that BZT films have the potential to be used as microwave tunable devices with superior performance.
-
58浏览
-
0点赞
-
1收藏
-
0分享
-
132下载
-
0评论
-
引用
【期刊论文】Crystallization kinetics and dielectric properties in sol-gel derived
翟继卫, Jiwei Zhai and Haydn Chen a)
J. Appl. Phys., Vol. 94, No.1, 1 July 2003,-0001,():
-1年11月30日
Sol-gel derived (Pb,La)(Zr,Sn,Ti)O3 powders and sintered ceramics were prepared; their crystallization kinetics and dielectric properties were studied as a function of temperature. X-ray powder diffraction showed that the pyrochlore phase formed initially from an amorphous gel during low-temperature heat treatment around 200-300℃. Further heat treatment to 600℃ resulted in the development of the perovskite phase with no significant growth of pyrochlore crystallites. At intermediate temperatures the sol-gel derived powders yielded a mixture of pyrochlore and perovskite phases. The crystallization kinetics of the perovskite phase was analyzed following the Avrami approach, which indicated that the process is diffusion limited. Those fine powders were utilized to prepare compact ceramics after sintering at various temperatures; their dielectric properties were analyzed. The electric field induced transformation from the antiferroelectric to the ferroelectric phase was clearly observed through the polarization reversal experiments. This material holds great promise for high energy density capacitors and microelectromechanical devices.
-
56浏览
-
0点赞
-
0收藏
-
0分享
-
156下载
-
0评论
-
引用
翟继卫, Zhai Jiwei, M. H. Cheung, Zheng Kui Xu, Xin Li, and Haydn Chen a), Eugene V. Colla, T. B. Wu
Appl. Phys. Lett., Vol. 81, No.19, 4 November 2002,-0001,():
-1年11月30日
Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700℃ for 30min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35mC/cm2, which is equal to that observed in bulk samples.
-
85浏览
-
0点赞
-
0收藏
-
0分享
-
129下载
-
0评论
-
引用
翟继卫, Jiwei Zhai, a) Xi Yao, Liangying Zhang, and Bo Shen
Appl. Phys. Lett., Vol. 84, No.16, 19 April 2004,-0001,():
-1年11月30日
Ba(Zr0.35Ti0.65)O3 (BZT) thin films were deposited via a sol-gel process on Pt-coated silicon substrates. The BZT films were in the perovskite phase and had polycrystalline structure. Temperature-dependent dielectric measurements revealed that the thin films have relaxor behavior and diffuse phase transition characteristics. The tunability K of the dielectric constant (at 600kV/cm) is about 40% in the temperature range of 179-293K. The improved temperature stability from this BZT thin film is beneficial to applications requiring a wide range of operating temperatures, thereby eliminating the need for environmental controls. Although the K value is not extraordinarily large compared to (Ba,Sr!TiO3, the low dielectric constant of BZT is attractive for microwave frequency applications. This provides an additional possibility in balancing K and dielectric constant through materials engineering for optimum device performance.
-
72浏览
-
0点赞
-
0收藏
-
0分享
-
134下载
-
0评论
-
引用
【期刊论文】Dielectric Properties of Ba(SnxTi1-x)O3 Thin Films Grown by a Sol-Gel Process
翟继卫, Jiwei Zhai, Bo Shen, Xi Yao, and Liangying Zhang, Haydn Chen*
J. Am. Ceram. Soc., 87 [12] 2223-2227 (2004),-0001,():
-1年11月30日
-
55浏览
-
0点赞
-
0收藏
-
0分享
-
155下载
-
0评论
-
引用
【期刊论文】Dielectric relaxation and tunability of Bi2O3-ZnO-CaO-Ta2O5 ceramics
翟继卫, Bo Shen, Jiwei Zhai, a and Xi Yao
Appl. Phys. Lett. 86, 072902 (2005),-0001,():
-1年11月30日
(Bi2−xCax)(Zn1/3Ta2/3)2O7 (0≤x≤1) ceramic were prepared by using a solid-state reaction technique. (Bi1.2Ca0.8)(Zn1/3Ta2/3)2O7 was found to have cubic pyrochlore structure, while (Bi1.9Ca0.1)(Zn1/3Ta2/3)2O7 was shown to have a monoclinic zirconolite structures. cubic pyrochlore (Bi1.2Ca0.8)(Zn1/3Ta2/3)2O7, not monoclinic zirconolite (Bi1.9Ca0.1)(Zn1/3Ta2/3)2O7, was found to show relaxation behavior at room temperature. Dielectric constant and dielectric loss were measured as functions of electric field and temperature. The results show a maximum tunability of 12% under a bias 60KV/cm in cubic-pyrochlore-structure (Bi1.2Ca0.8)(Zn1/3Ta2/3)2O7 ceramics.
-
51浏览
-
0点赞
-
0收藏
-
0分享
-
132下载
-
0评论
-
引用
【期刊论文】Orientation control and dielectric properties of sol-gel deposited Ba (Ti, Zr) O3 thin films
翟继卫, Zhai Jiwei a, *, Yao Xi a, ZhangLiang ying a, Shen Bo a, Haydn Chen b
Journal of Crystal Growth 262(2004)341-347,-0001,():
-1年11月30日
The effects of the mole concentrations of precursor solution on the microstructure and dielectric properties of sol-gel deposited BaZr0.35Ti0.65O3 (BZT) thin films have been investigated. The films were of single perovskite phase with strong (100) preferred orientation when it were grown on LaNiO3 buffered Pt/Ti/SiO2/Si substrates usinga diluted precursor solution. Variation of the precursor solution concentration resulted in a different microstructure and, in turn, affected the dielectric properties of the sol-gel deposited films. The BZT thin film showed a very stable and highly insulative characteristic against applied field. This work clearly reveals the highly promising potential of BZT compared with barium strontium titanium films for application in tunable microwave devices.
A1., Growth mechanism, A1., Surface orientation, A3., Chemical solution deposition, B1., Perovskites, B1., Ferroelectric materials
-
65浏览
-
0点赞
-
0收藏
-
0分享
-
91下载
-
0评论
-
引用
翟继卫, Jiwei Zhai and Haydn Chen a)
Appl. Phys. Lett., Vol. 84, No.7, 16 February 2004,-0001,():
-1年11月30日
The compositionally graded Ba12xSrxTiO3 films with a fine compositional gradient from BaTiO3 to Ba0. 70Sr0.30TiO3 were fabricated on LaNiO3-buffered Pt-Ti-SiO2-Si substrates by asol-gel deposition method. After post-deposition annealing the graded films crystallized into a pure perovskite structure with their crystalline orientation and surface morphology closely related to the deposition sequence of the film layers. Dielectric constant peaks, common to a ferroelectric transition, were not observed in the temperature range from 235℃ to 190℃. Instead both the dielectric constant and dielectric loss showed negligible temperature dependence. The tunability of up-graded and down-graded films was about 35% and 37%, respectively, at an applied field of 300 kV/cm and measurement frequency of 1 MHz. The improved temperature stability from this type of compositionally graded material is beneficial to applications requiring a wide range of operating temperatures, thereby eliminating the need for environmental controls.
-
42浏览
-
0点赞
-
0收藏
-
0分享
-
63下载
-
0评论
-
引用
翟继卫, Jiwei Zhai and Haydn Chen a)
Appl. Phys. Lett., Vol. 82, No.3, 20 January 2003,-0001,():
-1年11月30日
Bi3. 25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si and on LaNiO3 (LNO) buffered Pt/Ti/SiO2/Sisubstrates using sol-gel processing. Scanning electron micrographs showed the BLT films are composed of peg-like or platelet-like grains depending upon annealing temperature and the substrate type. Large platelet grains were found in BLT films deposited on the LNO/Pt/Ti/SiO2 /Si substrates; those thin films showed better polarization-voltage, capacitance-voltage, and current-voltage characteristics. More importantly, they did not show any significant fatigue up to 231010 switching cycles at a frequency of 1MHz and electric field 85kV/cm.
-
57浏览
-
0点赞
-
0收藏
-
0分享
-
95下载
-
0评论
-
引用
【期刊论文】Electric fatigue in Pb(Nb,Zr,Sn,Ti)O3 thin films grown by a sol-gel process
翟继卫, Jiwei Zhai and Haydn Chen a)
Appl. Phys. Lett., Vol. 83, No.5, 4 August 2003,-0001,():
-1年11月30日
Antiferroelectric Pb(Nb, Zr, Sn, Ti)O3 (PNZST) thin films were depositedvia asol-gel process on LaNiO3-buffered Pt/Ti/SiO2/Si substrates. The highly (100) oriented LaNiO3 buffer layer facilitated the formation of high-quality PNZST films with a strong (100) preferred orientation. These films showed improved electric fatigue properties than those grown on Pt/Ti/SiO2/Si substrates. With increasing cycling field, the remanent polarization increases but the saturated polarization decreases. Fatigue properties of PNZST antiferroelectric thin films might be closely related to the nonuniform strain buildup due to switching that tends to stabilize the ferroelectric phase.
-
39浏览
-
0点赞
-
0收藏
-
0分享
-
40下载
-
0评论
-
引用