蔡克峰
研究方向为热电材料、光电材料和纳米结构材料的制备、结构和性能研究。
个性化签名
- 姓名:蔡克峰
- 目前身份:
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师
- 职称:-
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学科领域:
材料科学基础学科
- 研究兴趣:研究方向为热电材料、光电材料和纳米结构材料的制备、结构和性能研究。
蔡克峰,男,1964年3月生,浙江诸暨人。1987年本科毕业于武汉工业大学(现武汉理工大学),1998年博士毕业于武汉工业大学。曾任武汉工业大学助教、讲师、副教授、教授。1999年1月-2001年1月,南非Witwatersrand大学物理系博士后;2001年8月-2001年9月,德国波恩歌德语言学院进修德语;2001年10月-2002年12月德国航空航天中心材料研究所洪堡学者。第二届中国材料研究学会青年委员会理事、国际热电材料学会会员, 国际刊物Materials Letters、Journal of Physical Chemistry论文评审人。2003年1月任同济大学功能材料研究所教授,同年4月被评为博士生导师。个人信息被美国的<
至今已发表专著一部:《新材料与现代文明》。发表论文60余篇,其中20余篇被SCI收录,已被他人的SCI文章引用30多次。获部级科技进步三等奖一项:TiC-Ni系统复合材料的增强增韧机理及其应用研究;已获中国发明专利一项:反应烧结用于制备氮化铝及氮化铝基复合材料; 正在受理的发明专利5项。
参加过国家攻关项目、“863”项目多项。目前,承担国家自然科学基金项目、教育部优秀青年教师资助计划各一项。与德国航天中心材料研究所的热传感器课题组、澳大利亚核科学与技术机构的布拉格研究所等有合作关系。
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2588
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474
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成果数
15
【期刊论文】Microstructure of hot-pressed B4C-TiB2 thermoelectric composites
蔡克峰, K. F. Cai a.b.*, C. W. Nan c, M. Schmuecker a, E. Mueller a
K. F. Cai et al./Journal of Alloys and Compounds 350(2003)313-318,-0001,():
-1年11月30日
B4C-TiB2 thermoelectric composites were prepared via hot-pressing. The phase composition, microstructure of the samples were characterized by means of XRD, SEM and TEM. The composition of different phases, including grain boundary phase, was analyzed by means of EDS. The effects of the microstructure on the thermoelectric properties of the composites are discussed.
Composite materials, Semiconductors, Powder metallurgy, SEM, TEM
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【期刊论文】The influence of W2B5 addition on microstructure and thermoelectric properties of B4C ceramic
蔡克峰, Ke-feng Cai*, Ce-Wen Nan
K.-f. Cai, C.-W. Nan/Ceramics International 26(2000)523-527,-0001,():
-1年11月30日
B4C and B4C-W2B5 composite ceramics are prepared via hot pressing. The composition and microstructure of the ceramics are characterized by means of X-ray diffraction (XRD), electron probe microanalysis (EPMA) and transmission electron microscope (TEM). Their electrical conductivity and Seebeck coe
B., Microstructure, D., Boron carbide, Composite ceramic, Thermoelectric properties, Tungsten boride
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【期刊论文】Preparation of Al2O3-AlON and Al2O3-AlN composites via reaction-bonding
蔡克峰, K. F. CAI*, D. S. MCLACHLAN
,-0001,():
-1年11月30日
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【期刊论文】Preparation, microstructures and properties of Al2O3-TiC composites
蔡克峰, K. F. Cai a, *, D. S. McLachlan a, N. Axenb, R. Manyatsa b
K.-F. Cai et al./Ceramics International 28(2002)217-222,-0001,():
-1年11月30日
Al2O3-TiC composites with various amounts of TiC, from 16 to 30 vol.%, were pressureless-sintered using 1 wt.% Al as an additive. The electrical conductivity, Vickers hardness, fracture toughness and wear resistance of the composites were studied. The hardness and toughness increased gradually with the increase of TiC volume fraction. The electrical conductivity increased with the increase of TiC volume fraction and increased about 10 orders of magnitude as the TiC volume fraction changed from 0.20 to 0.23. A sample whose TiC volume fraction is 0.23, which is close to its percolation threshold, had the best wear resistance.
B., Composites, B., Microstructure, D., Alumina, Properties, Titanium carbide
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【期刊论文】The effects of annealing on thermal and electrical properties of reaction-bonded AlN ceramic
蔡克峰, K. F. Cai a, b, c, *, D. S. McLachlan c, G. Sautic, E. Mueller b
K. F. Cai et al./Solid State Sciences 7(2005)945-949,-0001,():
-1年11月30日
An AlN ceramic sample was prepared using a reaction-bonding technique with Al and AlN powders, together with a very small amount of CaO (a sintering aid), as the starting materials. The effects of annealing at 1800℃ for 10 h in one atmosphere of Ar on the thermal and electrical properties of the ceramic were investigated. After annealing the thermal conductivity of the ceramic increased from 55 to 122W/mK, while the AC electrical conductivity, measured as a function of frequency, decreased. The difference in AC electrical conductivity before and after annealing gradually increased as the frequency decreased, reaching about one order of magnitude at 0.01Hz. The composition and microstructure were examined by means of XRD and SEM/EDS. The causes for the improvement in thermal and electrical properties due to the annealing are discussed.
Annealing, Nitrides, Microstructure, Thermal conductivity, Electrical properties
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【期刊论文】Preparation and thermoelectric properties of Al-doped ZnO ceramics
蔡克峰, K. F. Cai a, b, *, E. Müller a, C. Drašar a, A. Mrotzek a
K. F. Cai et al./Materials Science and Engineering B104(2003)45-48,-0001,():
-1年11月30日
Al2O3 added ZnO powders were prepared via sol-gel processing, using zinc acetate, ammonia and Al2O3 powders as starting materials. Scanning electron microscopy (SEM) observations indicated that the Al2O3 added ZnO powders consisted of very fine particles (0.1-2m). The thermal conductivity, electrical conductivity and Seebeck coefficient of hot-pressed Al2O3 added ZnO ceramic samples were measured in dependence of temperature up to 600℃. The influence of Al2O3 addition on the thermoelectric (TE) properties of ZnO ceramics is discussed.
Zinc oxide, Semiconductor, Thermoelectric properties, Sol-gel
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22浏览
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【期刊论文】The effect of silicon addition on thermoelectric properties of a B4C ceramic
蔡克峰, Ke-feng Cai a, b, *, Ce-Wen Nan a, Xin-min Min a
K.-f. Cai et al./Materials Science and Engineering B 67(1999)102-107,-0001,():
-1年11月30日
A B4C ceramic doped with 0.2 at% Si is prepared via hot pressing. The composition and microstructure of the ceramic are characterized by means of X-ray diffraction (XRD) and electron probe microanalysis (EPMA). The electrical conductivity and Seebeck coefficient of the ceramic samples are measured from room temperature up to 1500 K. The electrical conductivity increases with temperature; the Seebeck coefficient also increases with temperature and rises to a value of about 320μV K-1 at 1500K. The value of the figure of merit of 0.2 at% Si-doped B4C is higher than that of undoped B4C and rises to about 1×10-4K-1 at 1500K. The reason for enhancement in the figure of merit of Si-doped B4C is discussed.
Boron carbide, Ceramics, Hot pressing, Thermoelectric properties
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【期刊论文】Preparation of AlON-TiC composites via reaction-bonding
蔡克峰, K. F. Cai a, b, c, *, D. S. McLachlan b
K. F. Cai, D. S. McLachlan/Materials Research Bulletin 40(2005)447-451,-0001,():
-1年11月30日
AlON-TiC composites were fabricated via a reaction-bonding technique, using Al, Al2O3 and TiC powders as the starting materials. A composite sample sintered at 1850℃ after nitriding is highly densified and the Vickers hardness and fracture toughness of the sample are about 1751.1 kg/mm2 and 5.3 MPa m1/2, respectively. The composition and microstructure of the sample are characterized by means of XRD and SEM/EDX.
A: Composites, B: Chemical synthesis, D: Mechanical properties, D: Microstructure
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蔡克峰, K. F. Cai a, b, *, E. Mueller a, C. Drasar a, C. Stiewe a
K. F. Cai et al./Solid State Communications 131(2004)325-329,-0001,():
-1年11月30日
β-FeSi2-TiB2 composites with various amounts of TiB2, from 0 up to 30 vol%, were prepared by hot pressing. The electrical and thermal conductivities, and the Seebeck coefficient were measured as a function of temperature. The results show that the thermal and electrical transport behavior of the composites is different as the volume fraction of TiB2 is below and above about 0.255. A 5 vol% TiB2 added sample has higher figure of merit than one without TiB2 for temperatures above 650K. The influence of an additional phase, 1-FeSi, formed during the hot pressing, on the thermoelectric properties of the b-FeSi2-TiB2 composites was also discussed.
A., Semiconductors, D., Electronic transport, D., Thermoelectric properties
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【期刊论文】Effect of titanium carbide addition on the thermoelectric properties of B4C ceramics
蔡克峰, K.-f. Caia, c, *, C.-W. Nanb, Y. Padernod, D. S. McLachlanc
K. Cai et al./Solid State Communications 115(2000)523-526,-0001,():
-1年11月30日
TiB2/B4C composite ceramics are prepared via hot pressing, in which the TiB2 particles are formed by introducing TiC0.78 and through the reaction between B4C and TiC0.78. The electrical and thermal conductivities and Seebeck coefficient of samples containing 0, 12.5 and 25.4 vol% TiB2 are measured from room temperature up to 1200K. The results show that the transport properties of the samples vary with the TiB2 content. The transport properties of a 12.5 vol% TiB2/B4C sample are dominated by the B4C matrix as in undoped B4C ceramics, whilst the transport properties of a 25.4 vol% TiB2/B4C sample are dominated by TiB2 particles. The figure of merit of the 25.4 vol% TiB2/B4C sample is higher than that of the undoped B4C ceramic sample between room temperature and about 700K, which indicates that it is possible to improve the thermoelectric properties by selecting an optimum combination of different materials.
A., Semiconductors, D., Electronic transport
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