沙健
纳米硅线和纳米硅管的制备与物理特性研究
个性化签名
- 姓名:沙健
- 目前身份:
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师
- 职称:-
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学科领域:
凝聚态物理学
- 研究兴趣:纳米硅线和纳米硅管的制备与物理特性研究
沙健,理学博士,教授,博士生导师,浙江大学纳米科技中心副主任,浙江省物理学会理事,浙江省纳米材料应用与开发协会理事。主要从事准一维纳米材料的研制和光电性能探索以及介观物理的基础研究。作为第一负责人累计承担和完成了国家和省部级7个项目。其中国家自然科学基金3项,浙江省自然科学基金2项。在国内外著名学术刊物上发表论文90余篇,申请6项国家发明专利,获准两项。研究成果获1998年度浙江省教委科技进步一等奖。1998年入选浙江省151人才工程。早期曾从事新型纳米颗粒物质的制备、结构稳定性研究,发现了多种纳米颗粒结构相变的尺寸效应。近年来研究重点转移到纳米硅线和纳米硅管的制备与物理特性研究。在国际上首次用化学气相沉积方法(CVD)制备出多晶纳米硅管,并发现了纳米硅线中与声子激发模式相关的Raman谱温度效应。在纳米硅线的光致发光研究中,深入探讨了可见光波段特征光谱移动的机理。近期还开展了金属介观网络的输运特性和磁性的研究,发现了反常非线性I-V特性和伴随矫顽力提高的反常磁滞回线。此外,用CVD方法制备了具有39K临界温度的MgB2高温超导体纳米线,具有单晶结构的阵列化硼纳米线。1982年毕业于中国科技大学物理系,获理学学士学位;1991年在中国科技大学物理系获理学博士学位。1982年―1988年在中科院固体物理研究所工作,1992年―1993年在浙江大学近代物理中心博士后流动站工作。1993年任浙江大学物理系副教授,1998年任浙江大学物理系教授,2000年任博士生导师。1994至95年由国家科委选派赴韩国金属研究院参加中韩首次青年科学家交流。1998至2001年应邀到美国阿贡国家实验室(Argonne National Lab)开展研究。曾到美国加洲大学伯克利分校、斯坦福大学,加拿大多伦多大学、麦吉尔大学访问与合作。
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3246
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成果阅读
489
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成果数
10
【期刊论文】Tiny SiO2 nano-wires synthesized on Si (111) wafer
沙健, Junjie Niu a, Jian Sha a, b, Niansheng Zhang b, Yujie Ji a, Xiangyang Ma a, Deren Yang a, *
Physica E 23(2004)1-4,-0001,():
-1年11月30日
Tiny SiO2 nano-wires (SiO2-NWs) were synthesized on a p-Si (111) wafer by the chemical-vapor-deposition method. The minimum diameter of the nano-wires was around 9nm, and the length was longer than 10μm. The results of transmission electron microscopy shows that the amorphous nano-wires were composed of Si and O with an approximate atomic ratio of 1:2. Furthermore, the photoluminescence behavior of the SiO2-NWs has been also checked.
Tiny SiO2 nano-wires, Synthesis, PL spectrum
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【期刊论文】Tiny silicon nano-wires synthesis on silicon wafers
沙健, Junjie Niu a, Jian Sha a, b, Yujie Ji a, Deren Yang a, *
Physica E 24(2004)328-332,-0001,():
-1年11月30日
Tiny silicon nano-wires (SiNWs) were synthesized on silicon wafers by the chemical vapor deposition (CVD) technique. The morphology and structure of tiny SiNWs were analyzed by means of transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffraction (XRD), respectively. The results indicate that the tiny SiNWs were part-crystalline structure and were about 3nm in minimal diameter. Based on the line shift of Raman spectra, the structure transform of the tiny SiNWs was discussed. The defect-inducing growth mechanism will probably provide a new method for the minimum of the one-dimensional nano-materials.
Nano-wires, Synthesis, Silicon
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【期刊论文】Sulfide-assisted growth of silicon nano-wires by thermal evaporation of sulfur powders
沙健, Junjie Niu a, Jian Sha a, b, Deren Yang a, *
Physica E 24(2004)278-281,-0001,():
-1年11月30日
Silicon nanowires (SiNWs) with a diameter of-20nm were synthesized by the thermal evaporation of sulfur powders on silicon wafers. The source of the SiNWs came from the silicon substrates. It is considered that the generated SiS compound assisted the formation of SiNWs. Finally, the Raman shift of SiNWs was discussed.
Silicon, Nanowires, Sulfide assisted
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【期刊论文】Raman spectrum of array-orderly crystalline silicon nano-wires
沙健, Jianxun Liu a, Junjie Niu b, Deren Yang b, Mi Yan c, Jian Sha a, b, *
,-0001,():
-1年11月30日
Array-orderly single-crystal silicon nano-wires were fabricated by the nano-chammel-aluminal and CVD method. The average length and diameter of the nano-wires is about 10mm and 60nm, respectively. A study of the Raman spectrum of the nano-wires shows that the Raman shift to low frequency is due to the quantum confinement effect, which is discussed by using the phonon confinement model. Also we determine the peaks of the Raman spectrum to be corresponding to that of crystal silicon (c-Si).
Nano-wire, Raman spectra, Phonon confine model
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沙健, Junjie NIU, Jian SHA, Qing YANG and Deren YANG*
Japanese Journal of Applied Physics Vol. 43, No.7A, 2004, pp. 4460-4461,-0001,():
-1年11月30日
Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs with nearly amorphous structure were fabricated at 500℃; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800℃. The average diameter and length of the SiNWs are 40-70nm and 10mm, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.
nanowires,, silicon,, crystalline,, annealing
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【期刊论文】Synthesis of MgO nanotube bundles
沙健, Qing Yang, Jian Sha, , Lei Wang, Youwen Wang, Xiangyang Ma, Jun Wang and Deren Yang
Nanotechnology 15(2004)1004-1008,-0001,():
-1年11月30日
Non-filled MgO nanotube bundles have been fabricated via a thermal evaporation method using Mg strips as the source material. The samples were characterized using x-ray diffraction, scanning electron microscopy and transmission electron microscopy. The as-synthesized nanotubes self-assembled into bundles, and the nanotubes in a bundle had the same growth direction. The nanotubes are about 100nm in diameter and several micrometres in length. The possible growth process for the MgO nanotube bundles has been discussed.
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【期刊论文】Aligned single crystal MgB2 nanowires
沙健, Qing Yang, Jian Sha, , Xiangyang Ma, Yujie Ji, Deren Yang
Supercond. Sci. Technol. 17(2004)L31-L33,-0001,():
-1年11月30日
Aligned single crystal superconducting MgB2 nanowires were synthesized on nano-channel-Al2O3 (NCA) substrates. At first, aligned single crystal boron nanowires were prepared by the chemical vapour deposition process. Then magnesium was incorporated in a sealed vacuum quartz tube to form aligned single crystal superconducting MgB2 nanowires. The diameters of the MgB2 nanowires were in the range of 20-150nm. Finally, there are indications that the nanowires had a superconducting transition temperature (Tc) at~33K.
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【期刊论文】Aligned single crystal boron nanowires
沙健, Q. Yang a, *, J. Sha a, b, J. Xu a, Y.J. Jia, X.Y. Ma a, J.J. Niu a, H.Q. Hua b, D.R. Yang a
Chemical Physics Letters 379(2003)87-90,-0001,():
-1年11月30日
The well aligned boron nanowires (BNWs) with single crystalline structure were successfully prepared by using nanochannel-Al2O3 as a substrate and a chemical vapor deposition process. The diameter and length of BNWs were around of 40nm and several micrometers, respectively. The formation of single crystal BNWs has been conceptually interpreted.
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【期刊论文】Array-orderly single crystalline silicon nano-wires
沙健, Junjie Niu, Jian Sha*, Xiangyang Ma, Jin Xu, Deren Yang
Chemical Physics Letters 367(2003)528-532,-0001,():
-1年11月30日
scanning electron microscope (FESEM) and transmission electron microscope (TEM), the well-orderly single crystal SiNWs arrays were observed. The interval of the SiNWs is excellent symmetrical and consentaneous. The diameter and the length are around 35nm and 4μm, respectively. Furthermore, the energy dispersive X-ray spectroscopy analysis (EDX) indicated that the SiNWs consist of silicon core and silicon oxide sheath mainly. The Raman scattering was also carried out to analyze the structure of the oriented SiNWs. Finally, the growth mechanism of the SiNWs was discussed.
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【期刊论文】Room-Temperature Lasing Observed from ZnO Nanocolumns Grown by Aqueous Solution Deposition**
沙健, By Kuveshni Govender, David S. Boyle, Paul O'Brien, * David Binks, Dave West, and Dan Coleman
Adv. Mater. 2002, 14, No.17, September 3,-0001,():
-1年11月30日
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