茹国平
主要研究金属硅化物薄膜、金属/半导体接触以及氧化钒薄膜制备技术。
个性化签名
- 姓名:茹国平
- 目前身份:
- 担任导师情况:
- 学位:
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学术头衔:
博士生导师
- 职称:-
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学科领域:
微电子学
- 研究兴趣:主要研究金属硅化物薄膜、金属/半导体接触以及氧化钒薄膜制备技术。
茹国平:博士,教授,博士生导师。1990年毕业于南京大学物理系,获学士学位,1995年毕业于中国科学院上海微系统与信息技术研究所微电子学与固体电子学专业,获博士学位。1995.8.起在复旦大学微电子学系从事微电子专业科研和教学工作,1997.10.-1998.10.和2003.11.-2004.1.在比利时根特大学做访问学者。近年来主要研究金属硅化物薄膜、金属/半导体接触以及氧化钒薄膜制备技术。目前正承担国家自然科学基金、科技部国际合作项目、上海-应用材料研究与发展基金等项目的研究工作,在国内外期刊和会议上共发表论文一百余篇,曾获中科院自然科学二等奖、中科院科技进步二等奖和教育部科技进步三等奖等奖项,曾获得上海市教委曙光计划资助。曾担任第四届结技术国际研讨会程序委员会主席、第六届固态与集成电路技术国际会议程序委员会委员、第七届固态与集成电路技术国际会议组织委员会委员和第五届薄膜物理与应用国际会议程序委员会委员,现担任第五届结技术国际研讨会执行委员会主席。现为Applied Physics Letters/Journal of Applied、Chinese Physics Letters、半导体学报、电子学报等国内外刊物的审稿人, IEEE高级会员。
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747
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成果数
10
【期刊论文】Boron and phosphorous diffusion in ion-beam-sputtering deposited SiGe films
茹国平, Guo-Ping Ru*, Xin-Ping Qu, Qiang Gu, Wen-Jie Qi, Bing-Zong Li
Materials Letters 57(2002)921-924,-0001,():
-1年11月30日
Conventional dopant diffusion technique has been successfully employed to dope SiGe films deposited by ion-beam sputtering (IBS). The deposited a-SiGe films can be doped to both p and n types after boron and phosphorous diffusions at a temperature range of 850-1000℃. The doping process is accompanied by crystallization of the a-SiGe film. Electrical properties of the doped SiGe films have been characterized by a four-point probe and Hall measurements. Hall mobilities as high as 13 and 31cm2/V·s have been obtained in boron-and phosphorous-doped polycrystalline SiGe films, respectively.
SiGe, Ion-beam sputtering deposition, Dopant diffusion
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【期刊论文】Ni/Si solid phase reaction studied by temperature-dependent current-voltage technique
茹国平, Yu-Long Jiang and Guo-Ping Ru a), Fang Lu, Xin-Ping Qu and Bing-Zong Li, Simon Yang
J. Appl. Phys., Vol. 93, No.2, 15 January 2003,-0001,():
-1年11月30日
The temperature-dependent current-voltage (I-V-T) technique has been used to study the Ni/Si solid phase reaction by measuring the Schottky barrier height (SBH) inhomogeneity of Ni-silicide/Si Schottky diodes. The experimental results show the strong dependence of SBH inhomogeneity on the Ni/Si solid phase reaction. The SBH distribution of the diodes annealed at 500 and 600℃ can be described by a single-Gaussian function and the diode annealed at 500℃ is found to have the best homogeneity and the smallest leakage current. The SBH distribution of the diodes annealed at 400, 700, and 800℃ can be described by a double-Gaussian function in which the mean value of the second Gaussian function is substantially smaller than that of the dominant Gaussian function. The variation of SBH inhomogeneity, an interface property, is related to the phase evolution process in the Ni/Si solid phase reaction, and verified by reverse I-V measurements. Our results indicate that the I-V-T technique may be developed as a wafer-level testing tool to monitor the silicidation process in the complementary metal-oxide-semiconductor device fabrication.
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【期刊论文】Rectifying characteristics of sputter-deposited SiGe diodes
茹国平, Guo-Ping Ru, a), Guang-Wei Wang, Yu-Long Jiang, Wei Huang, Xin-Ping Qu, Shi-Yang Zhu, and Bing-Zong Li
J. Vac. Sci. Technol. B, Vol. 21, No.4, Jul/Aug 2003,-0001,():
-1年11月30日
Schottky and pn junction diodes with good rectifying characteristics have been prepared based on the polycrystalline SiGe (poly-SiGe) thin film deposited by the ion-beam-sputtering (IBS) technique. Boron and phosphorus diffusion techniques have been used to dope and crystallize as-deposited amorphous SiGe film. Rectification ratios as high as 4000 and 1800 have been achieved in Pt/n-poly-SiGe and Ti/p-poly-SiGe Schottky diodes, respectively, while rectification ratio higher than 1500 and breakdown voltage higher than 200V have been achieved in poly-SiGe pn junction diodes. Schottky barrier height has been determined to be 0.62 and 0.59 eV for Pt/n-poly-Si0.81Ge0.19 and Ti/p-poly-Si0.81Ge0.19 contacts, respectively, which indicates that the band alignment of poly-SiGe may be substantially different from that of epitaxial SiGe.
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茹国平
大学物理,2003,22(6):10~13,-0001,():
-1年11月30日
讨论了半导体pn结内建电场和接触电势的形成与可测性,回答了在半导体物理学pn结内容教学中学生经常会提出的一个似是而非的问题。从热力学第一定律、金属-半导体接触等不同角度详细解释了热平衡(零偏下)时pn结不可能对外输出电压和电流的原因。
pn结, 金属-半导体接触, 接触电势, 内建电场
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【期刊论文】Schottky contact properties of Ni/n-poly-Si0.87Ge0.13/n-Si (100) heterostructure
茹国平, Guang-Wei Wang*, Guo-Ping Ru, Xin-Ping Qu, Bing-Zong Li
Materials Letters 58(2004)2082-2086,-0001,():
-1年11月30日
Amorphous Si0.87Ge0.13 is deposited on n-Si (100) substrate by ion beam sputtering (IBS) and doped through thermal diffusion of phosphorus to fabricate n-poly-Si0.87Ge0.13 thin film. The formation of Schottky junction is made by deposition Ni on n-poly-Si0.87Ge0.13 by IBS. Solid-phase reaction mainly occurred above 400℃ by rapid thermal annealing at the interface of Ni/n-poly-Si0.87Ge0.13. Phase identification and depth profile were investigated by X-ray diffraction (XRD) and Auger electron spectroscopy (AES), respectively. The electrical properties of both unannealed and annealed Ni/n-poly-Si0.87Ge0.13 were studied by current-voltage (I-V) measurement. The results demonstrate that the Schottky barrier height (SBH) changes little with the annealing temperature between 300 and 600℃. The constancy of SBH is attributed to the properties of the interface itself which determine the SBH and substantially independent of whether the interfacial material is nickel or nickel germanosilicide.
Poly-SiGe, Ion beam sputtering deposition, Rapid thermal annealing, Schottky barrier height, Nickel germanosilicide
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【期刊论文】Nickel silicidation on n and p-type junctions at 300℃
茹国平, Yu-Long Jiang a), and Aditya Agarwal, Guo-Ping Ru, b), Xin-Ping Qu, John Poate, c), and Bing-Zong Li, Wayne Holland
Appl. Phys. Lett, Vol. 85, No.3, 19 July 2004,-0001,():
-1年11月30日
The electrical and materials properties of~20nm nickel silicide films, formed at 300℃, on n+/p and p+/n junctions are investigated. The sheet resistance of the silicide on p+/n junctions is found to be more than twice as high as that of the silicide on n+/p junctions. Cross section transmission electron microscopy, Rutherford backscattering spectroscopy, and x-ray photoelectron energy spectroscopy reveal that a pure Ni2Si layer forms on n+/p junctions while a thicker Ni2Si/NiSi double layer (~60% Ni2Si) forms on p+/n junctions. But the electrical differences are found to correlate only with differences in grain size and dopant concentration in the silicide.
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【期刊论文】The Reaction Characteristics of Ultra-Thin Ni Films on Undoped and Doped Si (100)
茹国平, YU-LONG JIANG, , GUO-PING RU, JIAN-HAI LIU, XIN-PING QU, and BING-ZONG LI
Journal of ELECTRONIC MATERIALS, Vol. 33, No.7, 2004,-0001,():
-1年11月30日
Reaction characteristics of ultra-thin Ni films (5nm and 10nm) on undoped and highly doped (As-doped and B-doped) Si (100) substrates are investigated in this work. The sheet resistance (Rs) measurements confirm the existence of a NiSi salicidation process window with low Rs values within a certain annealing temperature range for all the samples except the one of Ni (5nm) on P+-Si (100) substrate (abnormal sample). The experimental results also show that the transition reaction to low resistivity phase NiSi is retarded on highly doped Si substrates regardless of the initial Ni film thickness. Micro-Raman and x-ray diffraction (XRD) measurement show that NiSi forms in the process window and NiSi2 forms in a higher temperature annealing process for all normal substrates. Auger electron spectroscopy (AES) results for the abnormal sample show that the high resistivity of the formation film is due to the formation of NiSi2.
Nickel silicide,, rapid thermal processing,, solid-state reaction
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茹国平, Xin-Ping Qu a, *, Yu-Long Jiang a, Guo-Ping Ru a, Fang Lu a, Bing-Zong Li a, C. Detavernier b, R.L. Van Meirhaeghe b
Thin Solid Films 462-463(2004)146-150,-0001,():
-1年11月30日
Thermal stability, phase and interface uniformity of Ni-silicide are some key issues for NiSi Salicide technology. The improved stability of NiSi was achieved by Ni/Pt/Si and Ni/Pd/Si reaction. The increase of thermal stability can be explained by classical nucleation theory. The phase and interface uniformity of Ni-silicides formed by Ni-Si solid-state reaction were characterized by X-ray diffraction (XRD) and temperature-dependent current-voltage (I-V-T) techniques. Results show that the Schottky barrier height (SBH) inhomogeneity characteristic has strong dependence on annealing temperature for Ni-silicide formation. Deep level transient spectroscopy (DLTS) measurement shows that annealing at relatively low temperature may cause electrically active deep level defects in the film. These results show that choosing a proper annealing temperature for Ni/Si silicidation will be very important for device performance.
Nickel silicide, Thermal stability, Solid state reaction, Schottky barrier, Deep level defects
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【期刊论文】Solid-phase reaction and Schottky contact properties of Co/n-poly-Si0.84Ge0.16/n-Si (100)
茹国平, Guang-Wei Wang, a), Guo-Ping Ru, Xin-Ping Qu, and Bing-Zong Li
J. Vac. Sci. Technol. B, Vol. 22, No.4, Jul/Aug 2004,-0001,():
-1年11月30日
The Schottky contact of Co, its silicide and germanosilicide on n-poly-Si0.84Ge0.16 layer, was investigated. Amorphous Si0.84Ge0.16 layer was deposited on n-Si (100) substrate by ion beam sputtering (IBS). The layer was doped through thermal diffusion of phosphorus to fabricate n-poly-Si0.84Ge0.16 thin film. The Schottky diodes were formed by deposition of Co on n-poly-Si0.84Ge0.16 by the IBS technique. Solid-phase reaction between Co and n-poly-Si0.84Ge0.16 by rapid thermal annealing (RTA) as a function of temperature was studied. Phase identification and atomic depth profile were characterized by x-ray diffraction and Auger electron spectroscopy, respectively. The current-voltage and capacitance-voltage characteristics of both as-deposited and annealed Co/n-poly-Si0.84Ge0.16 Schottky diodes were investigated. The results reveal that the Schottky barrier height (SBH) keeps nearly constant with the annealing temperature between 300 and 600℃. The constancy of the SBH confirms the fact that Co and its silicides contacting with the same semiconductor have the close Schottky barrier height.
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【期刊论文】Annealing Process Influence and Dopant-Silicide Interaction in Self-Aligned NiSi Technology
茹国平, Guo-Ping Ru*, Yu-Long Jiang, Xin-Ping Qu, Bing-Zong Li
,-0001,():
-1年11月30日
This paper reports the annealing process influence on interfacial electrical properties, dopant effects on silicide formation, and dopant redistribution during silicidation in self-aligned NiSi technology. The reverse leakage current results of NiSi/n-Si Schottky diodes show that two-step rapid thermal process (RTP) significantly improves the NiSi/Si area-contact characteristics in comparison with one-step RTP, and low temperature in RTP1 is beneficial to the final Ni-silicide/Si contact properties. Both structural and electrical characterization shows substantially different Ni-silicidation behaviors on heavily-doped n+ and p+ Si substrates at low temperature (300℃). The larger grain size of Ni2Si formed on heavily As-doped Si is responsible for the lower resistivity, comparing with Ni2Si formed on heavily B-doped Si. Ni/Si reaction on highly doped Si substrates also results in significant dopant segregation at the silicide/Si interface and pile up in void-layer formed just underneath the silicide surface.
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