The electric field profile in the drift region of power MOSFET's with lateral structures and deep junctions been found analytically. From the analysis, the best uniform surface doping den-sity and the depth of the drift region in offset-gate power Mosfet's that introduces the minimum seies resistance and sustains a given junction breakdown voltage is derived. Design guidelines for such MOSFET's are proposed. The comparison with computer simulation results bas shown that it is reasonable for some practical structures.

作者山非平衡赴流子的座镇性方程出发，利用热导问题中的格林函数方法。证明了在记号变化的整流小于截止频率时通常电荷控制法的正确性。对于变化更快或要求描写更准确的情形。提出了可以引入一个准定态过程的概念。这时仍可近似地用通常的电荷法。为了推广电荷法，使其更准确，根据准定态概念导出了选用于化速度直到比截止频率高十倍的一个电荷法基本方程。找出了扩散管电荷参量与物理量及几何尺寸间的关系。把结论推广到截止区以及漂移管和二极管的情形。对二极管的计算，初步得到了实验结果的支持。

本文探讨了在一个方向是不均匀的媒质中应用镜像法求解恒定电场问题的可能性。得到一个描述镜像的二变量二防线性分方程。对于均匀媒质的情形。方程是常系数的。精合边界条件可以推演出计算电场或电位分布的所有镜象。对于不均匀媒质的情形。方程不是常系数的。这时虽然原则上可以用镜象法。但所需求解的议程和白电流连惯性（导体的电流场问题中）或电位通量连惯性（在电介质的静电电场问题中）缎带出的方程差不多同样复杂面难于计算。

求出了平面工艺所得圆柱边界的突变结的电位分布的解析解，它由若干项拉普斯议程的解和一项泊松方程的解组成，此解不象通常的圆柱对称解；在圆柱与平面的交界部分不存在不匹配，计算了击穿电压，其值略高于过去常用平面结击穿电压值，且用一个简单表示。

本文讨论了景点生活上注入下晶体管的IC-VBE特性的各种因素，作者发现发射结势区准费米能降落的影响对于解释实验中发现的n-d（Vas/Vr）/d in Tc<1的情况是重要的，文中也给出了精确测量集成晶体管对的n*值的差分方法。

半导体三极管在鲍和工作时，其等效电路可以用一极管及一个由集电极基极构成的二级管联成的电路表示出来，其中三极管在有源区工作，而二极管在正向温压下工作。这样的等效电路具有比较明显的物理意义。利用这个电路来求漂移管在一个共基电路中冲工作下的储存时间。解出非平衡少数流子的连惯性方程。求出二极管p-n结附近非平衡少数流于密度的稳定分量及态分量，从而得到决定储存时间的方程。计算结果表明，储存时间与基极区域集电区塸中非平衡流子的寿命及表面复合速度有关。减少寿命及增加表面复合速度就可以储存时间。

The hexagonal pattern of the voltage-sustaining layer in the COOLMOST with p-region in the center of cach unicell, which produces the lowest specific on-resistance, is studied based on a technologically achievable minimum aspec ratio of the width of each region to the thickness of the voltage-sustaining layer. A breakdown voltage higher than th previouw result is also achieved by breaking the requirement of the different peak fields to be equal. Futhermore, thdoping of the p-region near the drain is modified to get a better result It is believed that this is the new theoretica "Silicon Limit". The results show that a value Of Ron less than 1/3 of the previous one is obtained. Theoretical analysis given and shows in good agreement with the numerical simulation.

The effect of the reduction of the peak fild at the deges of reverse-biased p-n junctions by the resistive field pcale (RFP) and varation lateral doping (VLD) is explained with the surface charges induced by their structures. Analytical solutions of the field profile under the RFP and under the CLD were found. From which the optimujm doping profile of the VLD can also be found. The relations between the breakdown voltage and surface depletion width for these two structures are proposed. The realization of the optimum YLD by an approach using multiple multiple zones of the JTE IS to be satisfactory.

The epitaxial layer resistance of a Mosfet can be slightly reduced by using an oprimum doping protile. Which exhibits a mini-mum in the upper half of the layer when the layer thickness is large compared to the cell-to-cell spacing. A gradual transition from the nepitaxial layer to the n+ subsuase is desirable. When conent spreading is significant. The resistance may rise ad V52 rather than Vb25.

The optimized values for the physical and ge-ometrical parameters of the p-and n-regions used in the voltage-sustaining layer of the COLMOSTM2 are presented. Design of the parameters aimed to produce the lowest specific on-resistance. Ron.for a given breakdown vnltage. Vp.A new relationship between the Ron and Vv for the COOLMOSTM IS developed as Ron=cv1.32, where the constant Cis dependent by putting a thin layer of insulator between the p-region and its neighboring n-regions, the value of Ron can be further reduced. The possibilry of incorporating the insulating layer may open up opportunities for practical implementation of the COOLMOSTM fof volume production.